Abstract: A magnetic field generating apparatus is the magnetic field generating apparatus that transmits a control signal by a magnetic field to a capsule endoscope that performs control of start and stop according to the control signal. The magnetic field generating apparatus includes a housing including a storing section in which the capsule endoscope is arranged, a magnetic field generating section that generates the magnetic field, and a shield section that shields a leakage electromagnetic field leaking to an area other than the storing section in the magnetic field generated by the magnetic field generating section.

Abstract: A semiconductor wafer includes a substrate, a buffer region formed on one main surface of the substrate and formed from a compound semiconductor, and a main semiconductor region formed in the buffer region and formed from a compound semiconductor, wherein the buffer region includes a first multi-layer structured buffer region and a second multi-layer structured buffer region stacked with a plurality of alternating first layers and second layers, and a single layer structured buffer region arranged between the first multi-layer structured buffer region and the second multi-layer structured buffer region, the first layer is formed from a compound semiconductor which has a lattice constant smaller than a lattice constant of a material which forms the substrate, the second layer is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the substrate and a lattice constant of a material which forms the first layer, and wherein the single layer structu

Abstract: A device includes a substrate; a buffer layer; and a device formation layer, wherein the buffer layer is formed by sequentially stacking, a plurality of times, a first nitride-based semiconductor layer made of a material having a lattice constant lower than a lattice constant of a material of the substrate; a first composition graded layer made of a material having a lattice constant gradually higher than the lattice constant of the first nitride-based semiconductor layer in a thickness direction; a second nitride-based semiconductor layer made of a material having a lattice constant higher than the lattice constant of the first nitride-based semiconductor layer; and a second composition graded layer made of a material having a lattice constant gradually lower than the lattice constant of the second nitride-based semiconductor layer in the thickness direction, and the second composition graded layer is thicker than the first composition graded layer.

Abstract: A test object carrying device for use in an appearance inspection device for checking the appearance of the test objects, which includes a back/front reversal unit for turning over the test objects being conveyed by the forward conveying means and supplying them to the returning unit; the back/front reversal means is provided with a first drum for rotating and conveying the test objects unit while holding the test objects on the peripheral surface thereof, and a second drum for rotating and conveying the test objects being conveyed by the first drum while holding the test objects on the peripheral surface thereof; wherein at least one of the first drum and the second drum is structured so that the test objects are transferred in parallel to the forward conveying unit and returning unit by rotating and conveying the test objects while holding them on the peripheral surface thereof.

Abstract: The present invention relates to Notch-binding agents and Notch antagonists and methods of using the agents and/or antagonists for treating diseases such as cancer. The present invention provides antibodies that specifically bind to a non-ligand binding region of the extracellular domain of one or more human Notch receptor, such as Notch2 and/or Notch3, and inhibit tumor growth. The present invention further provides methods of treating cancer, the methods comprising administering a therapeutically effective amount of an antibody that specifically binds to a non-ligand binding region of the extracellular domain of a human Notch receptor protein and inhibits tumor growth.

Abstract: A surface illumination device includes: a point light source I having high directionality; a linear light conversion unit II that converts light from the point light source into linear light; a linear light diffusion unit III that diffuses the linear light; and a surface lighting unit IV that is irradiated with diffused light and outputs surface light. The light from the point light source I is converted into the linear light by the linear light conversion unit II. The linear light thus converted is diffused in a predetermined direction by the linear light diffusion unit III. The diffused light is radiated on the surface lighting unit IV to be converted into surface light and radiated.

Abstract: A semiconductor device reduces the on-resistance and, at the same time, raises the breakdown voltage. The drain electrode 20 of the semiconductor device runs through cap layer 13 and electron supply layer 12 and gets to a position lower than two-dimensional electron gas layer 14 in channel layer 11. Thus, the drain electrode 20 directly contacts the channel layer 11, the electron supply layer 12 and the cap layer 13. Angles (acute angles) ?, ø and ? are formed by the drain electrode 20 and the channel layer 11, the electron supply layer 12 and the cap layer 13 as viewed in the direction in which a hetero interface is formed (the transverse direction in FIG. 1) and relationships of ø<? and ø?? are established. In other words, ø is made smallest among the angles and the drain electrode 20 is remarkably tapered particularly at the position of the electron supply layer 12.

Abstract: A method of manufacturing a semiconductor device, in which a second semiconductor layer of AlxGa1-x-yInyN (wherein x, y, and x+y satisfy x>0, y?0, and x+y?1, respectively) on a first semiconductor layer of GaN by hetero-epitaxial growth using a MOCVD method, the method including the steps of: (a) supplying N source gas and Ga source gas to form the first semiconductor layer; (b) supplying the N source gas without supplying the Ga source gas and Al source gas, after step (a); (c) supplying the N source gas and the Al source gas without supplying the Ga source gas, after step (b); and (d) supplying the N source gas, the Ga source gas and the Al source gas to form the second semiconductor layer, after step (c).

Abstract: A nitride semiconductor device includes: a main semiconductor region comprising a first nitride semiconductor layer having a first band gap, and a second nitride semiconductor layer having a second band gap larger than the first band gap, a heterojunction being formed between the first nitride semiconductor layer and the second nitride semiconductor layer such that a two-dimensional electron gas layer can be caused inside the first nitride semiconductor layer based on the heterojunction; a source electrode; a drain electrode; a third nitride semiconductor layer formed on the first nitride semiconductor layer and between the source electrode and the drain electrode; a fourth nitride semiconductor layer formed on the third nitride semiconductor layer and having p-type conductivity; and a gate electrode formed on the fourth nitride semiconductor layer. The third nitride semiconductor layer has a third band gap smaller than the first band gap.

Abstract: A semiconductor device includes a first compound semiconductor layer having a two-dimensional carrier gas channel, a second compound semiconductor layer which functions as a barrier layer and is arranged above the first compound semiconductor layer, a first main electrode connected to one end of the two-dimensional carrier gas channel, and a second main electrode connected to another end of the two-dimensional carrier gas channel, these ends being separated, wherein a compound ratio of an elemental compound of the second compound semiconductor layer is different in a direction of the two-dimensional carrier gas channel between the first main electrode and the second main electrode.

Abstract: A front vehicle body structure includes, on each of left and right sides, a front side frame, an upper member, a frame connecting member, an impact absorbing mechanism. The impact absorbing mechanism has a closed cross-sectional shape in frontal view of a vehicle. The impact absorbing mechanism includes an external wall and an internal wall. The external wall is substantially straight with respect to an upper internal wall of the upper member such that the frame connecting member is disposed therebetween. The internal wall has a shape in which at least a front portion of the internal wall between a central portion of the internal wall in its longitudinal direction and the bumper beam is obliquely bent outward.

Abstract: An appearance inspection device, which inspects an appearance of test objects, includes a first and second conveying means 21 and 22a conveying the test objects, a back/front reversal means 23 turning over the front and back surfaces of the test objects being conveyed by the first conveying means 21 and supplying the test objects to the second conveying means 22a, and a plurality of image-pickup means 30b and 30c capturing images of each test object from upper oblique directions while the test objects are conveyed by the first and second conveying means 21 and 22a. The appearance inspection device also includes a defect detection means detecting the presence of defects in the test objects based on image data captured by the image-pickup means 30b and 30c. This appearance inspection device makes it possible to reliably and readily inspect an entire appearance of the test objects.

Abstract: A semiconductor device 1 includes a substrate 2 having on a main surface thereof a central area and a peripheral area which surrounds the central area and is exposed, a semiconductor layer 4 which is formed on the main surface of the substrate 2, is made of a material harder than the substrate 2, is in the shape of a mesa, and has a steep side over the exposed peripheral area, and an insulating film 12S provided on a side surface of the semiconductor layer 4.

Abstract: A vibrating feeder provided with a feeder ball 14a having a circular bottom wall and a conveyance path formed along the periphery of the bottom wall 141a; a feeder body 16a supporting the feeder ball 14a so as to apply torsional vibration and conveying substance supplied on the bottom wall 141a along the conveyance path; and a main body supporting member for supporting the feeder body; the conveyance path comprising an ascending rail and descending rail disposed in the downstream of the ascending rail in the conveyance direction; the main body 18a supporting member supporting the feeder body 16a on a horizontal floor so that a torsion axis C, which becomes the center of the torsional vibration, is inclined relative to the vertical direction; the ascending rail and descending rail conveying the conveyed objects upwardly or downwardly relative to the horizontal direction while the feeder body being supported by the horizontal floor via the main body supporting member.

Abstract: A method of manufacturing a semiconductor wafer, which includes: a semiconductor substrate made of silicon and having both a central area and an outer periphery area; and a compound semiconductor layer made of a nitride-based semiconductor and formed on the semiconductor substrate, the method comprising: forming a growth inhibition layer to inhibit the compound semiconductor layer from growing on a tapered part provided in the outer periphery area of the semiconductor substrate; and growing the compound semiconductor layer on at least the central area of the semiconductor substrate, after the growth inhibition layer has been formed.

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided.

Abstract: Epitaxy is carried out by immersing a single crystal substrate having a first principal surface, a second principal surface and a dislocation exposed on the first principal surface into an electrolytic solution including a cation of a metal having a melting point; carrying out electrolytic plating on the first principal surface to deposit the metal on the dislocation so as to cover the dislocation with the metal but leave a portion of the first principal surface where the dislocation is exposed uncovered with the metal; and causing epitaxy of a semiconductor layer on both the portion of the first principal surface and the metal covering the dislocation at a temperature below the melting point.

Abstract: Provided is a capsule-type endoscope that has a power receiving coil that wirelessly receives an electric power from outside a body of an individual to be examined, a processing circuit that performs predetermined processing, and an adjusting reactance section that is capable of adjusting a reactance that is connected to the power receiving coil.

Abstract: A wireless power supply apparatus for a capsule-type endoscope has three sets of coils that generate a magnetic field in directions that are orthogonal to each other, a gravity sensor that detects a gravitational direction, a coil selection section that selects a coil that generates a magnetic field in a gravitational direction that is detected by the gravity sensor, and a drive section that applies a current to the coil that the coil selection section selects.

Abstract: A semiconductor device according to the present invention including: a substrate; a compound semiconductor layer formed on the substrate; an element forming area provided in the compound semiconductor layer; and at least one semiconductor element, which includes a first main electrode and a main second electrode, wherein the at least one semiconductor element is formed in the element forming area, wherein the compound semiconductor layer includes: a first compound growth layer, which is formed on the substrate and includes the element forming area; and a second compound growth layer formed on the substrate to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer