Abstract: Novel anti-cancer agents, including, but not limited to, antibodies and other polypeptides, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided. Screening methods are also provided.

Abstract: Device having reduced buffer leak on GaN substrate. In HEMT device, n-GaN (n-type GaN wafer) is used as substrate 11. Non-doped AlpGa1-pN layer with non-uniform composition p is formed on substrate 11 as buffer layer 12. On buffer layer 12, channel layer 13 of semi-insulating GaN and electron supply layer 14 of n-AlGaN are sequentially formed. In buffer layer 12, substrate connection region 121 where p=0 (GaN) is formed on lower end side, and active layer connection region 122 where value of p is also 0 (GaN) is formed on upper end side (channel layer 13 side). High Al composition region 123 where value of p is set to 1 (p=1) (AlN) is formed between substrate connection region 121 and active layer connection region 122. Resistivity of the high Al composition region 123 is highest in the buffer layer.

Abstract: To suppress adverse affect caused by dopant in a conductive semiconductor layer in a GaN-based device having a structure in which the conductive semiconductor layer is inserted between a substrate and an active layer. In an HEMT device 10, n-GaN (n-type GaN wafer) is used as a substrate 11. A p-type GaN layer (conductive semiconductor layer) 12 is formed on the substrate 11 for the purpose of reducing a leak current and suppressing current collapse, etc. A non-doped AlN layer (semi-insulating semiconductor layer) 13 is formed on the p-type GaN layer 12, and a channel layer (active layer) 14 formed of semi-insulating GaN and an electron supply layer (active layer) 15 formed of n-AlGaN are sequentially formed by the MBE method, MOVPE method, or the like.

Abstract: A semiconductor device according to the present invention including: a substrate; a compound semiconductor layer formed on the substrate; an element forming area provided in the compound semiconductor layer; and at least one semiconductor element, which includes a first main electrode and a main second electrode, wherein the at least one semiconductor element is formed in the element forming area, wherein the compound semiconductor layer includes: a first compound growth layer, which is formed on the substrate and includes the element forming area; and a second compound growth layer formed on the substrate to surround the element forming area when viewed from a plane, wherein the second compound growth layer has a crystallinity lower than a crystallinity of the first compound growth layer.

Abstract: The present invention relates to Notch-binding agents and Notch antagonists and methods of using the agents and/or antagonists for treating diseases such as cancer. The present invention provides antibodies that specifically bind to a non-ligand binding region of the extracellular domain of one or more human Notch receptor, such as Notch2 and/or Notch3, and inhibit tumor growth. The present invention further provides methods of treating cancer, the methods comprising administering a therapeutically effective amount of an antibody that specifically binds to a non-ligand binding region of the extracellular domain of a human Notch receptor protein and inhibits tumor growth.

Abstract: A nitride semiconductor device includes: a main semiconductor region comprising a first nitride semiconductor layer having a first band gap, and a second nitride semiconductor layer having a second band gap larger than the first band gap, a heterojunction being formed between the first nitride semiconductor layer and a the second nitride semiconductor layer such that two-dimensional electron gas layer can be caused inside the first nitride semiconductor layer based on the heterojunction; a source electrode formed on the main semiconductor region; a drain electrode formed on the main semiconductor region and separated from the source electrode; a third nitride semiconductor layer formed on the first nitride semiconductor layer and between the source electrode and the drain electrode; and a gate electrode formed on the third nitride semiconductor layer. The third nitride semiconductor layer has a third band gap smaller than the first band gap.

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided.

Abstract: A method of manufacturing a semiconductor device, in which a second semiconductor layer of AlxGa1-x-yInyN (wherein x, y, and x+y satisfy x>0, y?0, and x+y?1, respectively) on a first semiconductor layer of GaN by hetero-epitaxial growth using a MOCVD method, the method including the steps of: (a) supplying N source gas and Ga source gas to form the first semiconductor layer; (b) supplying the N source gas without supplying the Ga source gas and Al source gas, after step (a); (c) supplying the N source gas and the Al source gas without supplying the Ga source gas, after step (b); and (d) supplying the N source gas, the Ga source gas and the Al source gas to form the second semiconductor layer, after step (c).

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided.

Abstract: A front vehicle body structure includes, on each of left and right sides, a front side frame, an upper member, a frame connecting member, an impact absorbing mechanism. The impact absorbing mechanism has a closed cross-sectional shape in frontal view of a vehicle. The impact absorbing mechanism includes an external wall and an internal wall. The external wall is substantially straight with respect to an upper internal wall of the upper member such that the frame connecting member is disposed therebetween. The internal wall has a shape in which at least a front portion of the internal wall between a central portion of the internal wall in its longitudinal direction and the bumper beam is obliquely bent outward.

Abstract: A capsule endoscope system provided with a magnetic field generating apparatus including an input section for inputting identification information A and a magnetic field generating section that generates a magnetic field signal that controls a capsule endoscope, and the capsule endoscope including an in-vivo information acquiring section, a battery, a magnetic field receiving section, a storage section that stores identification information B, a control section and a comparing section that compares the identification information A with the identification information B and judges whether both pieces of information are the same or different, wherein when the judgment by the comparing section is a judgment that both pieces of information are the same, the control section supplies or shuts off power from the battery to the in-vivo information acquiring section.

Abstract: A semiconductor device including: a substrate, which has a composition represented by the formula: Ala?Ga1-a?N, wherein a? satisfies 0<a??1; an active layer, which is formed on the substrate, and which has a composition represented by the formula: Alm?Ga1-m?N, wherein m? satisfies 0?m?<1; a buffer layer disposed between the active layer and the substrate; and a first main electrode and a second main electrode, which are formed on the active layer, and which are separated from each other, wherein the semiconductor device is operated by electric current flowing between the first main electrode and the second main electrode in the active layer, and wherein the buffer layer has a composition represented by the formula: AlbIn1-bN, wherein a composition ratio b satisfies 0<b<1, wherein the composition ratio b satisfies m?<b<a?.

Abstract: Isolated antibodies that specifically bind the human MET Receptor and inhibit MET signaling are described. Also described are methods of treating cancer, the methods comprising administering a therapeutically effective amount of the provided MET antibodies and combinations thereof.

Abstract: The present invention relates to Notch-binding agents and Notch antagonists and methods of using the agents and/or antagonists for treating diseases such as cancer. The present invention provides antibodies that specifically bind to a non-ligand binding region of the extracellular domain of one or more human Notch receptor, such as Notch2 and/or Notch3, and inhibit tumor growth. The present invention further provides methods of treating cancer, the methods comprising administering a therapeutically effective amount of an antibody that specifically binds to a non-ligand binding region of the extracellular domain of a human Notch receptor protein and inhibits tumor growth.

Abstract: A semiconductor device is formed on a semiconductor substrate, which is comprised of: a base substrate; and a multilayer being formed on the base substrate and having a surface serving for an interface with the semiconductor device, the multilayer including alternating layers of a first compound semiconductor and a second compound semiconductor materially distinguishable from the first compound semiconductor, one selected from the group consisting of the first compound semiconductor and the second compound semiconductor being doped with one selected from the group consisting of carbon and transition elements.

Abstract: A nitride semiconductor device including: a substrate; a nitride semiconductor layer formed on the substrate and having a heterojunction interface; and a recess portion formed on the nitride semiconductor layer, wherein the nitride semiconductor layer includes: a carrier transit layer, which has a composition represented by the formula: Alx1Inx2Ga1?x1?x2N, (0?x1?1, 0?x2?1, 0?(x1+x2)?1); and a carrier supply layer including: a first layer formed on the carrier transit layer, said first layer having a composition represented by the formula: AlyGa1?yN, (0<y?1, x1<y); a second layer formed on the first layer, said second layer containing GaN; and a third layer formed on the second layer, said third layer having a composition represented by the formula: AlzGa1?zN, (0<z?1, x1<z), and wherein the recess portion is formed to penetrate the third layer and expose a surface of the second layer at a bottom portion of the recess portion.

Abstract: [Purpose] A light display method is capable of providing planar light displays of various types of characters with increased degrees of freedom, by using a plurality of point light sources and making light source units interchangeable on a point light source basis. [Constitution] In a light display method making light displays of various types of characters by employing a plurality of point light sources, each light display of the characters A, N, O, and S is made by dividing and segmenting the characters into at least one or more sets of light source units a1, n1, o1, o2, o3, s1, s2, and s3 including at least one of the point light sources, having a common structure in each character A, N, O, and S or a plurality of different characters, and making illumination by light emitted from the point light source as planar illumination light.

Abstract: Antibodies that specifically bind to an extracellular domain of human Jagged 1 or human Jagged2 and modulate Jagged activity, and methods of using said antibodies to inhibit tumor growth are disclosed. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an anti-Jagged antibody to a patient having a tumor or cancer.

Abstract: The present invention relates to Notch-binding agents and Notch antagonists and methods of using the agents and/or antagonists for treating diseases such as cancer. The present invention provides antibodies that specifically bind to a non-ligand binding region of the extracellular domain of one or more human Notch receptor, such as Notch2 and/or Notch3, and inhibit tumor growth. The present invention further provides methods of treating cancer, the methods comprising administering a therapeutically effective amount of an antibody that specifically binds to a non-ligand binding region of the extracellular domain of a human Notch receptor protein and inhibits tumor growth.

Abstract: An information processing terminal device includes a state monitoring unit that monitors whether or not there exits an unread e-mail or a missed call, a light order control unit that makes an emitting unit emit a color corresponding to each sender in a given order when the unread e-mail or the missed call is detected, where a light order control unit determines a light order of the colors according to a receiving order of the unread e-mail or an incoming order of the missed call.