Abstract: A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/atomscm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.

Abstract: A semiconductor substrate including: substrate; buffer layer provided on substrate; high-resistance layer provided on buffer layer, high-resistance layer being composed of nitride-based semiconductor and containing transition metal and carbon; and channel layer provided on high-resistance layer, channel layer being composed of nitride-based semiconductor, wherein high-resistance layer includes reduction layer in contact with channel layer, reduction layer being layer in which concentration of transition metal is reduced from side where buffer layer is located toward side where channel layer is located, and reduction rate at which carbon concentration is reduced toward channel layer is higher than reduction rate at which concentration of transition metal is reduced toward channel layer.

Abstract: A method for manufacturing a semiconductor substrate, the semiconductor substrate including: a substrate; an initial layer provided on the substrate; a high-resistance layer provided on the initial layer which is composed of a nitride-based semiconductor and contains carbon; and a channel layer provided on the high-resistance layer which is composed of a nitride-based semiconductor, and at a step of forming the high-resistance layer, a gradient is given to a preset temperature at which the semiconductor substrate is heated, and the high-resistance layer is formed such that the preset temperature at the start of formation of the high-resistance layer is different from the preset temperature at the end of formation of the high-resistance layer. It is possible to provide the method for manufacturing a semiconductor substrate, which can reduce a concentration gradient of carbon concentration in the high-resistance layer and also provide a desired value for the carbon concentration.

Abstract: A shape estimation device includes an input circuit, a storage circuit and an arithmetic circuit. The input circuit receives light amount information being a relationship between a wavelength and a light amount. The light amount information is acquired by using a sensor configured such that the light amount to be detected with respect to the wavelength corresponding to each of sensing parts varies in accordance with a shape of each sensing part. The storage circuit stores a light amount estimation relationship including a relationship among the shape, the wavelength and the light amount. The arithmetic circuit calculates a light amount estimation value by an optimization arithmetic operation such that the estimation value based on the light amount estimation relationship and the light amount information satisfy a predetermined condition.

Abstract: Isolated antibodies that specifically binds to an extracellular conserved ligand binding region of a human Notch receptor and inhibits growth of a tumor are described. Also described are methods of treating cancer, the method comprising administering an anti-Notch antibody in an amount effective to inhibit tumor growth.

Abstract: A shape estimation device includes an input circuit, a storage circuit and an arithmetic circuit. The input circuit receives light amount information being a relationship between a wavelength and a light amount. The light amount information is acquired by using a sensor configured such that the light amount to be detected with respect to the wavelength corresponding to each of sensing parts varies in accordance with a shape of each of the sensing parts. The storage circuit stores a relationship among the shape, the wavelength and the light amount with respect to each sensing part. The arithmetic circuit calculates the shape of each sensing part, based on the light amount information, and a light amount estimation value being a relationship between the wavelength and the light amount.

Abstract: A curvature sensor is to be mounted along detection target to allow a curvature of the detection target. The sensor includes a light source, a light guide to guide light from the light source and sensing parts having light absorbability. The sensing parts include absorption bands having different intrinsic absorption patterns and characteristic absorption bands having intrinsic characteristic absorption patterns in the absorption bands. A light detector allows residual light not absorbed by the characteristic absorption bands to be detected, the residual light being included in light of bands corresponding to the characteristic absorption bands and radiated to the sensing parts from the light source. A calculator computes a curvature of the detection target based on a rate of change in the residual light.

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided.

Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: A method for producing a semiconductor epitaxial wafer, including steps of: fabricating an epitaxial wafer by epitaxially growing a semiconductor layer on a silicon-based substrate; observing the outer edge portion of the fabricated epitaxial wafer; and removing portions in which a crack, epitaxial layer peeling, and a reaction mark observed in the step of observing are present. As a result, a method for producing a semiconductor epitaxial wafer in which a completely crack-free semiconductor epitaxial wafer can be obtained, is provided.

Abstract: A semiconductor substrate including a substrate, a buffer layer having a nitride-based semiconductor containing carbon provided on the substrate, a high-resistance layer having a nitride-based semiconductor containing carbon provided on the buffer layer, and a channel layer having a nitride-based semiconductor provided on the high-resistance layer, the high-resistance layer including a first region having carbon concentration lower than that of the buffer layer, and a second region which is provided between the first region and the channel layer, and has the carbon concentration higher than the first region.

Abstract: An insertion shape detection apparatus includes an insert portion having flexibility. The insert portion includes a shape estimation section where curved shape is estimated and a shape non-estimation section where curved shape is not estimated. The insertion shape detection apparatus includes a sensing part arranged only in the shape estimation section to detect the curved shape of the shape estimation section. Thus, the number of sensing parts is reduced and the increase in the diameter of the insert portion and complicated processing of curve information is avoided, while the curved shape of the insert portion in a section necessary to assist an endoscopic observation can be detected.

Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer including epitaxially growing a semiconductor layer on the silicon-based substrate after applying terrace processing to an outer peripheral portion of the silicon-based substrate. As a result, the method of manufacturing the epitaxial wafer having the epitaxial layer on the silicon-based substrate in which an epitaxial wafer which is completely free from cracks can be obtained, is provided.

Abstract: A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided.

Abstract: The present invention relates to Notch-binding agents and Notch antagonists and methods of using the agents and/or antagonists for treating diseases such as cancer. The present invention provides antibodies that specifically bind to a non-ligand binding region of the extracellular domain of one or more human Notch receptor, such as Notch2 and/or Notch3, and inhibit tumor growth. The present invention further provides methods of treating cancer, the methods comprising administering a therapeutically effective amount of an antibody that specifically binds to a non-ligand binding region of the extracellular domain of a human Notch receptor protein and inhibits tumor growth.

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided.

Abstract: A control system includes a load including an operative part, and a control device for supplying AC power to the load through a power line and operating the operative part. The control device includes an interruption mechanism and a transmission mechanism. The load includes a controller. The transmission mechanism transmits a predetermined control signal to the load through the power line by blocking the power supply to the load by the interruption mechanism for a time duration shorter than a half cycle of AC output. The controller controls the operative part based on the control signal received from the control device.

Abstract: The present invention relates to Jagged-binding agents and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind to an extracellular domain of human Jagged1 or human Jagged2 and modulate Jagged activity. The present invention further provides methods of using agents that modulate the activity of Jagged, such as antibodies that specifically bind Jagged, and inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: Semiconductor device including: silicon-based substrate; first buffer layer on silicon-based substrate and is formed of first layer containing Al composition and second layer containing less Al than the first layer, the first and second layers being alternately stacked; second buffer layer on the first buffer layer and is formed of third layer containing Al composition and fourth layer containing less Al than the third layer, the third and fourth layers being alternately stacked; and third buffer layer on the second buffer layer and is formed of fifth layer containing Al composition and sixth layer containing less Al than the fifth layer, the fifth and sixth layers being alternately stacked, wherein the second buffer layer contains more Al than the first and third buffer layers. Thus, the semiconductor device leakage can be suppressed while reducing stress which is applied to buffer layer and can improve flatness of active layer upper face.