Abstract: A control system includes a load including an operative part, and a control device for supplying AC power to the load through a power line and operating the operative part. The control device includes an interruption mechanism and a transmission mechanism. The load includes a controller. The transmission mechanism transmits a predetermined control signal to the load through the power line by blocking the power supply to the load by the interruption mechanism for a time duration shorter than a half cycle of AC output. The controller controls the operative part based on the control signal received from the control device.

Abstract: The present invention relates to Jagged-binding agents and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind to an extracellular domain of human Jagged1 or human Jagged2 and modulate Jagged activity. The present invention further provides methods of using agents that modulate the activity of Jagged, such as antibodies that specifically bind Jagged, and inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: Semiconductor device including: silicon-based substrate; first buffer layer on silicon-based substrate and is formed of first layer containing Al composition and second layer containing less Al than the first layer, the first and second layers being alternately stacked; second buffer layer on the first buffer layer and is formed of third layer containing Al composition and fourth layer containing less Al than the third layer, the third and fourth layers being alternately stacked; and third buffer layer on the second buffer layer and is formed of fifth layer containing Al composition and sixth layer containing less Al than the fifth layer, the fifth and sixth layers being alternately stacked, wherein the second buffer layer contains more Al than the first and third buffer layers. Thus, the semiconductor device leakage can be suppressed while reducing stress which is applied to buffer layer and can improve flatness of active layer upper face.

Abstract: The present invention relates to VEGF-binding agents, DLL4-binding agents, VEGF/DLL4 bispecific binding agents, and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind human VEGF, antibodies that specifically bind human DLL4, and bispecific antibodies that specifically bind human VEGF and/or human DLL4. The present invention further provides methods of using the agents to inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: At least a part of the one characteristic change section is arranged at a position different from at least apart of the other characteristic change section in a circumferential direction of an optical sensor. At least a part of the one characteristic change section is arranged at a position different from at least a part of the other characteristic change section in an axial direction of an optical sensor.

Abstract: A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front surface side which has a first impurity concentration and a second portion provided on an inner side of the first portion which has a second impurity concentration higher than the first impurity concentration, wherein the first impurity concentration being 1×1014 atoms/atomscm3 or more and less than 1×1019 atoms/cm3. Consequently, there is provided the silicon-based substrate in which the crystallinity of the nitride compound semiconductor layer formed on an upper side thereof can be maintained excellently while improving a warpage of the substrate.

Abstract: Semiconductor device including: silicon-based substrate; first buffer layer on silicon-based substrate and is formed of first layer containing Al composition and second layer containing less Al than the first layer, the first and second layers being alternately stacked; second buffer layer on the first buffer layer and is formed of third layer containing Al composition and fourth layer containing less Al than the third layer, the third and fourth layers being alternately stacked; and third buffer layer on the second buffer layer and is formed of fifth layer containing Al composition and sixth layer containing less Al than the fifth layer, the fifth and sixth layers being alternately stacked, wherein the second buffer layer contains more Al than the first and third buffer layers. Thus, the semiconductor device leakage can be suppressed while reducing stress which is applied to buffer layer and can improve flatness of active layer upper face.

Abstract: A semiconductor substrate having a silicon-based substrate, a buffer layer provided on the silicon-based substrate and made of a nitride semiconductor containing boron, and an operation layer formed on the buffer layer, wherein a concentration of boron in the buffer layer gradually decreasing toward a side of the operation layer from a side of the silicon-based substrate. Thereby, the semiconductor substrate in which the buffer layer contains boron sufficient to obtain a dislocation suppression effect and boron is not diffused to the operation layer is provided.

Abstract: A calibration assist apparatus is an apparatus for use in a curving system, the curving system including an elongated flexible portion and a curve detection unit which is provided in the flexible portion and which is configured to detect a curving amount of the flexible portion. The calibration assist apparatus assists in calibrating the curve detection unit. The calibration assist apparatus includes a calibrator configured to restrain a deformation and a movement of the flexible portion in both directions along a first axis perpendicular to a longitudinal axis of the flexible portion and restrain a deformation and a movement of the flexible portion in at least one direction along a second axis perpendicular to the longitudinal axis and the first axis.

Abstract: A wireless power supply apparatus for a capsule-type endoscope has three sets of coils that generate a magnetic field in directions that are orthogonal to each other, a gravity sensor that detects a gravitational direction, a coil selection section that selects a coil that generates a magnetic field in a gravitational direction that is detected by the gravity sensor, and a drive section that applies a current to the coil that the coil selection section selects.

Abstract: The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided.

Abstract: Novel anti-cancer agents, including, but not limited to, antibodies, that bind to human frizzled receptors are provided. Novel epitopes within the human frizzled receptors which are suitable as targets for anti-cancer agents are also identified. Methods of using the agents or antibodies, such as methods of using the agents or antibodies to inhibit Wnt signaling and/or inhibit tumor growth are further provided.

Abstract: A semiconductor device comprising: an active layer, which has a composition represented by the formula: AlxMyGa1-x-yN, wherein x satisfies 0?x?1, wherein y satisfies 0?y?1, wherein x+y satisfies 0?x+y?1, and wherein M contains at least one of In and B; a substrate containing GaN; and a buffer layer provided between the active layer and the substrate, wherein the semiconductor device is operated by electrical current flowing through the active layer in a direction parallel to a face of the substrate, wherein the buffer layer has a composition represented by the formula: AlpIn1-pN, wherein p satisfies 0?p<1, and wherein the buffer layer, which has a band gap energy wider than that of the substrate, and which is lattice-matched to the substrate.

Abstract: The present invention relates to Notch-binding agents and Notch antagonists and methods of using the agents and/or antagonists for treating diseases such as cancer. The present invention provides antibodies that specifically bind to a non-ligand binding region of the extracellular domain of one or more human Notch receptor, such as Notch2 and/or Notch3, and inhibit tumor growth. The present invention further provides methods of treating cancer, the methods comprising administering a therapeutically effective amount of an antibody that specifically binds to a non-ligand binding region of the extracellular domain of a human Notch receptor protein and inhibits tumor growth.

Abstract: The present invention relates to Jagged-binding agents and methods of using the agents for treating diseases such as cancer. The present invention provides antibodies that specifically bind to an extracellular domain of human Jagged1 or human Jagged2 and modulate Jagged activity. The present invention further provides methods of using agents that modulate the activity of Jagged, such as antibodies that specifically bind Jagged, and inhibit tumor growth. Also described are methods of treating cancer comprising administering a therapeutically effect amount of an agent or antibody of the present invention to a patient having a tumor or cancer.

Abstract: Provided is a surface light source unit which has a high-directivity point light source and has a decreased thickness in the in the direction in which light is irradiated from said point light source. Also provided are a surface illumination device and a liquid crystal display device. A plurality of small chambers (311 to 322) having an opening on the top are formed in a housing (3) from side plates (3b to 3e) that have a predetermined height and partition plates (4) which partition the inside of the housing (3). Each small chamber is provided with a point light source (2) on the bottom part.

Abstract: Isolated antibodies that specifically binds to an extracellular conserved ligand binding region of a human Notch receptor and inhibits growth of a tumor are described. Also described are methods of treating cancer, the method comprising administering an anti-Notch antibody in an amount effective to inhibit tumor growth.

Abstract: An illumination device including a light source device includes a light source being constituted by LED(s); a light source side reflective plate to which the light source is fixed; an emission side reflective plate facing the light source side reflective plate; and a fixing means for fixing the both reflective plates, wherein the emission side reflective plate is formed so that a portion thereof facing the light source has the highest optical reflectance and the lowest optical transmittance while the optical reflectance decreases and the optical transmittance increases farther away from the light source, and the distance between the both reflective plates is greatest at a portion where the light source is disposed, while the distance decreases at portions farther away from the portion where the light source is disposed. Thus the device can supply light in a substantially uniform manner from a light irradiation surface.

Abstract: The invention provides a method for manufacturing a nitride semiconductor device that grows a multilayer film of a III-V group nitride semiconductor in a reaction furnace into which a III group element raw material gas and a V group element raw material gas are introduced, the method including: growing a first nitride semiconductor layer at a first raw material gas flow rate of the V group element raw material gas and a first carrier gas flow rate; and growing a second nitride semiconductor layer at a second raw material gas flow rate of the V group element raw material gas lower than the first raw material gas flow rate and a second carrier gas flow rate higher than the first carrier gas flow rate, wherein the first nitride semiconductor layer and the second nitride semiconductor layer are stacked.