Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, and a first conductive layer. The first insulating layer is provided over the semiconductor layer. The first conductive layer is provided over the first insulating layer. The semiconductor layer includes a first region that overlaps with the first conductive layer and the first insulating layer, a second region that does not overlap with the first conductive layer and overlaps with the first insulating layer, and a third region that overlaps with neither the first conductive layer nor the first insulating layer. The semiconductor layer contains a metal oxide. The second region and the third region contain a first element. The first element is one or more elements selected from boron, phosphorus, aluminum, and magnesium.

Abstract: A display apparatus having an image capturing function is provided. A display apparatus or an image capturing device with a high aperture ratio is provided. The display apparatus includes a first light-emitting element and a light-receiving element. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode. The light-receiving element includes a second pixel electrode, a second organic layer, and the common electrode. The first organic layer includes a first light-emitting layer, and the second organic layer includes a photoelectric conversion layer. A first layer and a second layer are included in a region between the first light-emitting element and the light-receiving element. The first layer overlaps with the second organic layer and the second pixel electrode and contains a material identical to a material of the first organic layer.

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

Abstract: A high-resolution or high-definition display apparatus is provided.

Abstract: A display apparatus with high resolution is provided. A display apparatus which can achieve high color reproducibility is provided. A display apparatus with high luminance is provided. A highly reliable display apparatus is provided. The display apparatus includes a first insulating layer, a first conductive layer provided in an opening of the first insulating layer, a first EL layer over the first conductive layer and the first insulating layer, a second insulating layer in contact with a side surface of the first EL layer and a top surface of the first insulating layer, and a second conductive layer over the first EL layer and the second insulating layer.

Abstract: A display apparatus having an image capturing function is provided. A display apparatus or an image capturing with a high aperture ratio is provided. The display apparatus includes a light-emitting element and a light-receiving element. A first pixel electrode, a first organic layer, and a common electrode are stacked in this order in the light-emitting element. A second pixel electrode, a second organic layer, and the common electrode are stacked in this order in the light-receiving element. The second organic layer includes a photoelectric conversion layer. A first layer and a second layer are included in a region between the first light-emitting element and the light-receiving element. The first layer overlaps with the second organic layer and contains a material the same as a material of the first organic layer. The second layer overlaps with the first organic layer and contains a material the same as a material of the second organic layer.

Abstract: A miniaturized semiconductor device is provided. The semiconductor device includes a semiconductor layer over a substrate, a first conductive layer and a second conductive layer being apart from each other over the semiconductor layer, a mask layer in contact with a top surface of the first conductive layer, a first insulating layer covering the semiconductor layer, the first conductive layer, the second conductive layer, and the mask layer, and a third conductive layer overlapping with the semiconductor layer and being over the first insulating layer. The first insulating layer is in contact with a top surface and a side surface of the mask layer, a side surface of the first conductive layer, a top surface and a side surface of the second conductive layer, and a top surface of the semiconductor layer. The semiconductor device includes a region in which the distance between opposite end portions of the first conductive layer and the second conductive layer is less than or equal to 1 ?m.

Abstract: A display apparatus with high display quality is provided. A highly reliable display apparatus is provided. A display apparatus with low power consumption is provided. A display apparatus with a high resolution is provided. A display apparatus with high contrast is provided. The display apparatus includes a plurality of pixels over a first insulating layer. Each of the plurality of pixels includes a first conductive layer provided along an opening portion of the first insulating layer, a second insulating layer over the first conductive layer, an EL layer over the first conductive layer and the second insulating layer, and a common electrode over the EL layer. The second insulating layer is over and in contact with the first conductive layer and placed below the EL layer. The first conductive layers of adjacent pixels are separated by a third insulating layer containing an inorganic material and a fourth insulating layer containing an organic material.

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract: A display apparatus with a wide viewing angle is provided. The display apparatus includes a first light-emitting element and a second light-emitting element over a substrate. The first light-emitting element includes a first pixel electrode, a first organic layer, and a common electrode, and the second light-emitting element includes a second pixel electrode, a second organic layer, and the common electrode. In a top view of the substrate, the first light-emitting element includes a first side and a second side that is shorter than the first side. An absolute value of a difference between a chromaticity difference between a chromaticity in a front direction and a chromaticity in a first direction and a chromaticity difference between the chromaticity in the front direction and a chromaticity in a second direction is less than or equal to 0.05.

Abstract: Manufacturing equipment in which processes from processing to sealing of an organic compound film can be successively performed is provided. A patterning process of a light-emitting device and a sealing process that is performed to prevent the surface and side surface of an organic layer from being exposed to the air can be performed successively, whereby a minute light-emitting device with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can be incorporated in in-line manufacturing equipment where apparatuses are arranged in the order of processes for a light-emitting device, resulting in high throughput manufacturing.

Abstract: A high-resolution or high-definition display device is provided.

Abstract: A display apparatus with a novel structure is provided. The display apparatus includes a display surface, a flexible non-rectangular substrate over which part of the display surface is formed, and a light-emitting device formed over the flexible substrate. The light-emitting device includes pixel regions formed in a matrix. The display surface has a convex or concave region when part of the flexible non-rectangular substrate is bent. A novel light-emitting apparatus, a novel display apparatus, a novel input/output apparatus, or a novel semiconductor apparatus can be achieved. The display apparatus enables the degree of design flexibility of a display apparatus to be increased and design of the display apparatus to be improved.

Abstract: In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.

Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

Abstract: A display device with high display quality and high reliability is provided. The display device includes a first light-emitting element, a second light-emitting element positioned to be adjacent to the first light-emitting element, a first protective layer, a second protective layer, and an insulating layer. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer is provided over the first pixel electrode, and the second EL layer is provided over the second pixel electrode. The first protective layer includes a region overlapping with a side surface of the first pixel electrode, a side surface of the second pixel electrode, a side surface of the first EL layer, and a side surface of the second EL layer.

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

Abstract: A display device that has high display quality is provided. A highly reliable display device is provided. A display device with low power consumption is provided. A light-emitting element is electrically connected to one of a source and a drain of a first transistor. The other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of a second transistor. A gate electrode of the second transistor is electrically connected to one of a source and a drain of a third transistor. A semiconductor layer of the second transistor and a semiconductor layer of the third transistor each include indium, zinc and a third metal. The ratio of the number of indium atoms to the total number of the indium atoms, zinc atoms, and atoms of the third metal in the semiconductor layer of the second transistor is higher than or equal to 30 atomic % and lower than or equal to 100 atomic %.

Abstract: A display apparatus with high resolution or high definition is provided.