Abstract: The present invention provides an MIM capacitor using a high-k dielectric film preventing degradation of breakdown field strength of the MIM capacitor and suppressing the increase of the leakage current. The MIM capacitor comprises a first metal interconnect, a fabricated capacitance film, a fabricated upper electrode, and a third metal interconnect. The MIM capacitor is realized by forming an interlayer dielectric film comprising silicon oxide so as to cover the first metal interconnect, then forming a first opening in the interlayer dielectric film to a region corresponding to a via hole layer in the interlayer dielectric film just above the first metal interconnect so as not to expose the upper surface of the first metal interconnect, then forming a second opening to the inside of the first opening so as to expose the surface of the first metal interconnect and then forming a capacitance film and a third metal interconnect.

Abstract: A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.

Abstract: A piezoelectric element includes a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: An order supporting system includes a machine monitoring apparatus including an obtaining part for repetitively obtaining status data of plural supplies of plural machines connected to a network, a storing part for storing the status data obtained by the obtaining part, a detecting part for detecting change in the status of the supply by comparing the status data stored in the storing part and new status data that is newly obtained by the obtaining part, and a transmitting part for transmitting status data corresponding to the supply of the machine from which status change is detected by the detecting part, and an order supporting apparatus for receiving the status data transmitted from the transmitting part via the network and transmitting an electronic mail to a mail address associated to the machine corresponding to the transmitted status data in accordance with the received status data.

Abstract: The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by P?MAX; and a point located on a circumference of a reference-circle having P?MAX as a center and having a minimum difference in displacement from P?MAX is expressed by P?A, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining P?MAX and P?A, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.

Abstract: A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

Abstract: A disclosed information processing apparatus includes an information processing unit configured to operate as a daemon process; an information displaying unit configured to operate as a process different from the daemon process and display a screen relevant to the information processing unit; a first ending unit configured to end the information displaying unit due to a first factor; and a second ending unit configured to end the information displaying unit due to a second factor different from the first factor. The information displaying unit ends the information processing unit in the event of receiving a request to end from the first ending unit and the information displaying unit does not end the information processing unit in the event of receiving a request to end from the second ending unit.

Abstract: A piezoelectric ceramic that includes barium titanate and 0.04 mass % or more and 0.20 mass % or less manganese relative to barium titanate. The piezoelectric ceramic is composed of crystal grains. The crystal grains include crystal grains A having an equivalent circular diameter of 30 ?m or more and 300 ?m or less and crystal grains B having an equivalent circular diameter of 0.5 ?m or more and 3 ?m or less. The crystal grains A and the crystal grains B individually form aggregates and the aggregates of the crystal grains A and the aggregates of the crystal grains B form a sea-island structure.

Abstract: In a piezoelectric device, a first electrode and a second electrode are disposed to be opposed to each other on plate surfaces of the piezoelectric device, a first electrode plane of the piezoelectric device is fixedly bonded to a plate surface of a vibrating plate, a piezoelectric material forming the piezoelectric device is polarized in a direction parallel to the first electrode plane, the piezoelectric device is fixed to a base through a second electrode plane of the piezoelectric device, and the piezoelectric device generates a thickness-shear vibration with the fixed second electrode plane being a reference plane. The piezoelectric vibration generated by the piezoelectric device generates a flexural vibration in the vibrating plate, to thereby remove dust adhering to a surface of the vibrating plate.

Abstract: A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO3, where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.

Abstract: A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4?n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (001?) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: A data processing apparatus contains a first bus connected to a first memory, a first central processing unit (CPU) being accessible to the first memory via the first bus, a first Direct Memory Access (DMA) controller being accessible to the first memory via the first bus, and a monitor circuit connected to the first bus and monitoring addresses transferred on the first bus. The addresses transferred on the first bus are transmitted from the first DMA controller to the first memory via the first bus. The monitor circuit compares the address transferred on the first bus with a preset monitor target address. The CPU acquires the comparison results by the monitor circuit. If the comparison results show an address match, then the CPU accesses the first memory. The CPU can in this way access the first memory at a correct timing.

Abstract: A disclosed information processing apparatus includes an information processing unit configured to operate as a daemon process; an information displaying unit configured to operate as a process different from the daemon process and display a screen relevant to the information processing unit; a first ending unit configured to end the information displaying unit due to a first factor; and a second ending unit configured to end the information displaying unit due to a second factor different from the first factor. The information displaying unit ends the information processing unit in the event of receiving a request to end from the first ending unit and the information displaying unit does not end the information processing unit in the event of receiving a request to end from the second ending unit.

Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, includes forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.

Abstract: A piezoelectric substance element has a piezoelectric substance film and a pair of electrodes connected to the piezoelectric substance film on a substrate, and a main component of the piezoelectric substance film is Pb(Zr, Ti)O3, a composition ratio of Zr/(Zr+Ti) is over 0.4 but less than 0.7, the piezoelectric substance film is a film having at last a tetragonal crystal a-domain and a c-domain within a range of ±10° with respect to the surface of the substrate, and a volume rate of the c-domain to the total of the a-domain and the c-domain is equal to or larger than 20% and equal to or smaller than 60%.

Abstract: A recess made up of a rear bushing part receiving part and a front cord guiding part is formed as a space between a pair of rib walls opposed to each other in the left and right direction at a vicinity of an edge rim of a front cabinet on a side to be connected to a rear cabinet. First and second groove parts are formed on inner wall faces of the rib walls opposed to each other sandwiching the bushing part receiving part so as to engage respectively with the first and the second flange parts of the bushing part. The second groove part of the rib walls has no wall at the front side and is open to the cord guiding part.