Abstract: A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

Abstract: A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

Abstract: A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4?n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.

Abstract: In a liquid crystal display, an enclosure is formed by detachably fitting a synthetic resin-made front enclosure including a liquid crystal panel with a synthetic resin-made rear enclosure, and the enclosure is fitted upright to a stand by drilling a substantially U-shaped stand hole in the middle of a bottom plate of the rear enclosure. Further, the stand is attached to the exterior casing of the liquid crystal panel by screws, the stand in the stand hole is removably formed on the outside of the rear enclosure through the cutout portion by forming the cutout portion reaching the stand hole from the edge of the bottom plate at the bottom plate of the rear enclosure 1B, and a sealing plate for sealing the cutout portion integrally protrudes from the central portion of the edge of the bottom plate of the front enclosure.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (001?) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); WC is a half-value width of a peak of the (001?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)??(1) where, Cc is a count number of a peak of a (00l?) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, l? is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h?00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h? is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (00l?) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h?00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

Abstract: A feeding bobbin including a winding shaft including two ends each having a flange detachable mounted thereon, the shaft being common to various feeding bobbins for a thermal transfer printer, wherein the flanges are separated by a width corresponding to the width of a thermal transfer sheet or image receiving sheet to be wound around the winding shaft, and the winding shaft includes a portion for receiving such sheet wound thereon, the portion having a width regulatable by location of a combination of the flanges according to the width of such sheet.

Abstract: An actuator comprises a laminated structure having a vibration plate, a lower electrode, a piezoelectric element, and an upper electrode laminated sequentially on a basic element, and then, at least the lower electrode of the two electrodes is a thin oxide film doped with La of single orientated crystal or monocrystal that contains Sr and Ti. Thus, it is made possible to materialize the micro miniaturized actuator having a strong structure of lamination with high adhesion, which is capable of obtaining large displacement with sufficient durability without spoiling the piezo-electrostrictive property thereof even with the small thickness of the piezoelectric element. With the micro miniaturized actuator thus structured, it is made possible to make a liquid discharge head more precisely.

Abstract: The present invention provides an automatic paper feed apparatus which can reliably prevent papers from being discharged in an overlapped state in spite of simple construction. The automatic paper feed apparatus comprises a paper feed roller for automatically feeding a plurality of papers in order from an uppermost one, with the plurality of papers being contained in a cassette in a stacked state. A holding member having flexibility is provided so that the holding member comes into contact with the uppermost paper to generate a friction force that is weaker than that between the paper feed roller and the uppermost paper.

Abstract: A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate.

Abstract: A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.

Abstract: A method for manufacturing a ferroelectric member element structure having a ferroelectric member film, and lower and upper electrodes between which the ferroelectric member film is sandwiched, the method comprising the steps of: forming a buffer layer having pattern-shaped oriented growth on a monocrystal substrate; performing oriented growth of the lower electrode layer on the buffer layer; performing oriented growth of ferroelectric member film to cover the buffer layer and the lower electrode layer; and removing a portion of the ferroelectric member film other than the portion having the oriented growth achieved along the pattern of the buffer layer, by means of an etching treatment.

Abstract: Disclosed is a television with a disk playback feature, in which the convenience of the slot-in mechanism is preserved and a disk can be unloaded without being damaged by the lid body. A critical point is established on the path of turning of the second point of application of spring force. By the urging force of the torsion spring, the pivoting door can be forced to either open or close the slot, subject to whether or not the second point is beyond the critical point. The slot can be closed positively by the door plate before the second point reaches the critical point. Once the second point goes beyond the critical point, the pivoting door can be swung open without being thrust by the disk. Therefore, resistance during disk unloading is reduced and it can be prevented that a disk is damaged by touching with the door plate.

Abstract: A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.

Abstract: An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.

Abstract: A dielectric member including, on a substrate, a lower electrode, an oriented dielectric layer, and an upper electrode, in which at least either of the electrodes has an at least two-layered structure constituted of perovskite type oxide conductive layers, and has an orientation.

Abstract: A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

Abstract: To provide a dielectric layer of crystal structure preferentially or uniaxially oriented on a common substrate. A dielectric element of desired quality can be stably produced even on a common substrate for film-making by forming a lower electrode layer, dielectric layer and upper electrode layer in this order on a substrate, wherein each of these layers are designed to be preferentially or uniaxially oriented, and to have a specific half bandwidth, determined by fitting a pseudo-Voigt function.

Abstract: The present invention provides an automatic paper feed apparatus which can reliably prevent papers from being discharged in an overlapped state in spite of simple construction. The automatic paper feed apparatus comprises a paper feed roller for automatically feeding a plurality of papers in order from an uppermost one, with the plurality of papers being contained in a cassette in a stacked state. A holding member having flexibility is provided so that the holding member comes into contact with the uppermost paper to generate a friction force that is weaker than that between the paper feed roller and the uppermost paper.

Abstract: Disclosed is herein a semiconductor device having a DRAM with less scattering of threshold voltage of MISFET in a memory cell and having good charge retainability of a capacitor, and a manufacturing method of the semiconductor device. An anti-oxidation film is formed to the side wall of a gate electrode before light oxidation thereby suppressing the oxidation of the side wall for the gate electrode and decreasing scattering of the thickness of the film formed to the sidewall in an asymmetric diffusion region structure in which the impurity concentration of an n-type semiconductor region and a p-type semiconductor region on the side of the data line is made relatively higher than the impurity concentration in the n-type semiconductor region and p-type semiconductor region on the side of the capacitor, respectively.