Abstract: Disclosed is a television with a disk playback feature, in which the convenience of the slot-in mechanism is preserved and a disk can be unloaded without being damaged by the lid body. A critical point is established on the path of turning of the second point of application of spring force. By the urging force of the torsion spring, the pivoting door can be forced to either open or close the slot, subject to whether or not the second point is beyond the critical point. The slot can be closed positively by the door plate before the second point reaches the critical point. Once the second point goes beyond the critical point, the pivoting door can be swung open without being thrust by the disk. Therefore, resistance during disk unloading is reduced and it can be prevented that a disk is damaged by touching with the door plate.

Abstract: The present invention provides a piezoelectric material which can be applied even to the MEMS technique, exhibits satisfactory piezoelectricity even at high ambient temperatures and is environmentally clean, namely, a piezoelectric material including an oxide obtained by forming a solid solution composed of two perovskite oxides A(1)B(1)O3 and A(2)B(2)O3 different from each other in crystalline phase, the oxide being represented by the following general formula (1): X{A(1)B(1)O3}?(1?X){A(2)B(2)O3}??(1) wherein “A(1)” and “A(2)” are each an element including an alkali earth metal and may be the same or different from each other; “B(1)” and “B(2)” each include two or more metal elements, and either one of “B(1)” and “B(2)” contains Cu in a content of 3 atm % or more; and “X” satisfies the relation 0<X<1.

Abstract: A resistor R1 formed by forming a first resistor layer 5a of 20 nm thickness including a tantalum nitride film at a concentration of nitrogen of less than 30 at % and a second resistor layer of 5 nm thickness including a tantalum nitride film at a concentration of nitrogen of 30 at % or more successively by a reactive DC sputtering method using tantalum as a sputtering target material and using a gas mixture of argon and nitrogen as a sputtering gas, and then fabricating the first and the second resistor layers, in which the resistance change ratio of the resistor can be suppressed to less than 1% even when a thermal load is applied in the interconnection step, by the provision of the upper region at a concentration of nitrogen of 30 at % or more.

Abstract: A method for producing a piezoelectric film actuator is provided. This method includes the steps of preparing an intermediate transfer member having a porous layer formed thereon, with a vibrating plate and a piezoelectric layer being provided on the porous layer; bonding the vibrating plate to a nozzle substrate to form a composite structure; and separating the intermediate transfer member from the composite structure at the porous layer to transfer the vibrating plate and the piezoelectric layer to the nozzle substrate.

Abstract: A liquid crystal display device includes a liquid crystal module, a disk drive and a wiring board. The liquid crystal module has protrusions formed on a back plate of the liquid crystal module. The disk drive has attachment components aligned with the protrusions and fixed to the protrusions. The wiring board is disposed between the liquid crystal module and the disk drive. The wiring board has holes into which the protrusions are inserted.

Abstract: A recess made up of a rear bushing part receiving part and a front cord guiding part is formed as a space between a pair of rib walls opposed to each other in the left and right direction at a vicinity of an edge rim of a front cabinet on a side to be connected to a rear cabinet. First and second groove parts are formed on inner wall faces of the rib walls opposed to each other sandwiching the bushing part receiving part so as to engage respectively with the first and the second flange parts of the bushing part. The second groove part of the rib walls has no wall at the front side and is open to the cord guiding part.

Abstract: In a printer driver that transmits a print data to a printer connected via a network to make a print request, a document password processing unit prompts a user to input a document password for decrypting a PDF document data encrypted by a predetermined application. A print data creating unit creates a print data including the PDF document data encrypted and the document password. The created print data is transmitted to the printer via the network by a host I/F controller and a host I/F.

Abstract: The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of <100> orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

Abstract: The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an ?-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.

Abstract: A DRAM capacitor uses ruthenium or ruthenium oxide as an upper electrode and hafnium dioxide or zirconium oxide as an insulation layer. The DRAM capacitor is intended to suppress diffusion of ruthenium, etc. into hafnium dioxide. Tantalum pentoxide or niobium oxide having a higher permittivity than that of the insulation layer is inserted as a cap insulation layer to the boundary between the upper electrode of ruthenium or ruthenium oxide and the insulation layer of hafnium dioxide or zirconium oxide to thereby suppress diffusion of ruthenium, etc. into hafnium dioxide, etc.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: The present invention provides a piezoelectric element and having a piezoelectric body and a pair of electrodes being contact with the piezoelectric body, wherein the piezoelectric body consists of an ABO3 perovskite oxide in which an A-site atom consists of Bi and a B-site atom is composed of an atom of at least two types of elements.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3 ??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.

Abstract: An image forming apparatus determines whether orientation of an image is specified in the instructions associated with the print data. If orientation is not specified, the orientation (Portrait or Landscape) is set based on printing conditions provided in the associated instructions. The printing conditions can be document size, rotation angle, or print layout.

Abstract: A data processing apparatus contains a first bus connected to a first memory, a first central processing unit (CPU) being accessible to the first memory via the first bus, a first Direct Memory Access (DMA) controller being accessible to the first memory via the first bus, and a monitor circuit connected to the first bus and monitoring addresses transferred on the first bus. The addresses transferred on the first bus are transmitted from the first DMA controller to the first memory via the first bus. The monitor circuit compares the address transferred on the first bus with a preset monitor target address. The CPU acquires the comparison results by the monitor circuit. If the comparison results show an address match, then the CPU accesses the first memory. The CPU can in this way access the first memory at a correct timing.

Abstract: The present invention provides an MIM capacitor using a high-k dielectric film preventing degradation of breakdown field strength of the MIM capacitor and suppressing the increase of the leakage current. The MIM capacitor comprises a first metal interconnect, a fabricated capacitance film, a fabricated upper electrode, and a third metal interconnect. The MIM capacitor is realized by forming an interlayer dielectric film comprising silicon oxide so as to cover the first metal interconnect, then forming a first opening in the interlayer dielectric film to a region corresponding to a via hole layer in the interlayer dielectric film just above the first metal interconnect so as not to expose the upper surface of the first metal interconnect, then forming a second opening to the inside of the first opening so as to expose the surface of the first metal interconnect and then forming a capacitance film and a third metal interconnect.

Abstract: A method of manufacturing a piezoelectric body, formed from a film made of an ABO3 perovskite oxide crystal epitaxially grown on a substrate, comprises forming a film containing an AOx crystal by using an oxide containing an A element and a B element by heating the substrate to a temperature which is equal to or higher than a temperature at which the AOx crystal is formed, and which is lower than a temperature at which the ABO3 perovskite oxide crystal is formed and changing the film containing the AOx crystal into a film made of the ABO3 perovskite oxide crystal by heating the substrate to a temperature which exceeds a temperature at which the AOx crystal can be present, and which is equal to or higher than a temperature at which the ABO3 perovskite oxide crystal is formed.

Abstract: A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.

Abstract: A piezoelectric element comprises a piezoelectric film disposed on a substrate and a pair of electrodes disposed in contact with the piezoelectric film and utilizing a bending mode. The piezoelectric film includes domains constituted of a tetragonal crystal and including an a-domain which is formed by a crystal having a (100) plane parallel to the film surface of the piezoelectric film, the a-domains include an A-domain having a normal axis of (001) plane substantially parallel to a principal bending direction of the piezoelectric film and a B-domain having a normal axis of (001) plane substantially perpendicular to the principal bending direction of the piezoelectric film, and the A-domains have a volume proportion larger than 50 vol % with respect to the sum of the volume of the A-domains and the volume of the B-domains.