Abstract: A laser processing method for a gallium arsenide wafer of radiating a laser beam along streets formed in lattice on a surface of a gallium arsenide substrate, and cutting-off the gallium arsenide wafer along the streets includes a wafer supporting step for sticking a rear surface of the gallium arsenide substrate on a protective member, a debris shielding coating step for coating the surface of the gallium arsenide substrate with a debris shielding film, a laser-processed trench forming step for radiating a laser beam along the streets from the debris shielding film side to the gallium arsenide substrate, thereby forming laser-processed trenches each not reaching the rear surface, and a cutting-off step for radiating the laser beam along the laser-processed trenches to the gallium arsenide substrate, thereby forming cutting-off trenches each reaching the rear surface.

Abstract: A laser processing apparatus including a holding unit for holding a workpiece, a processing unit for applying a laser beam to the workpiece held by the holding unit, a surface displacement detecting unit for detecting a surface displacement of the workpiece, and a focal position adjusting unit for adjusting the position of a focusing lens provided in the processing unit according to the surface displacement detected. The surface displacement detecting unit includes a detecting light source capable of oscillating light having a plurality of wavelengths different from the wavelength of the laser beam and a wavelength selecting section configured to select one of the plurality of wavelengths as the wavelength of detecting light. The detecting light having the selected wavelength is focused by the focusing lens and applied to the workpiece.

Abstract: A laser beam is applied to an intersection area of each second street of a wafer by using a dicing apparatus to thereby form a first modified layer along the intersection area. Thereafter, the wafer is divided along each first street intersecting each second street at right angles to obtain a plurality of wafer strips. Thereafter, the laser beam is applied along the remaining area of each second street other than the intersection area to form a second modified layer along the remaining area of each second street. Thereafter, an external force is applied to each wafer strip in which the first and second modified layers have been formed along each second street, thereby dividing each wafer strip along each second street to obtain a plurality of devices.

Abstract: First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.

Abstract: A laser beam processing machine including a chuck table for holding a workpiece, a laser beam application device for applying a laser beam to the workpiece held on the chuck table, and a processing-feed mechanism for moving the chuck table and the laser beam application device relative to each other. The condenser of the laser beam application device includes a first prism for dividing the laser beam oscillated from the laser beam oscillation mechanism into a first laser beam and a second laser beam, and a second prism for correcting optical paths of the first laser beam and the second laser beam so they become parallel to each other. An image forming lens forms respective spots of the first laser beam and the second laser beam whose optical paths have been corrected to be parallel to each other by the second prism, into images of spots having linear portions on the outer sides and arcuate portions on the inner sides.

Abstract: A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.

Abstract: A laser processing method for a gallium arsenide wafer of radiating a laser beam along streets formed in lattice on a surface of a gallium arsenide substrate, and cutting-off the gallium arsenide wafer along the streets includes a wafer supporting step for sticking a rear surface of the gallium arsenide substrate on a protective member, a debris shielding coating step for coating the surface of the gallium arsenide substrate with a debris shielding film, a laser-processed trench forming step for radiating a laser beam along the streets from the debris shielding film side to the gallium arsenide substrate, thereby forming laser-processed trenches each not reaching the rear surface, and a cutting-off step for radiating the laser beam along the laser-processed trenches to the gallium arsenide substrate, thereby forming cutting-off trenches each reaching the rear surface.

Abstract: A method of dividing a wafer having devices in areas sectioned by lattice pattern-like streets on the front surface and a metal layer formed on the rear surface along the streets, comprising the steps of cutting the wafer with a cutting blade from the front surface side along the streets to form a cut groove, leaving behind a remaining portion having a predetermined thickness from the rear surface; and applying a laser beam along the cut groove formed by the above cut groove forming step to cut the remaining portion and the metal layer.

Abstract: To provide a method of processing a sapphire substrate, where reduction in luminance of light emitting devices can be suppressed if a sapphire substrate is divided into individual light emitting devices by irradiation of a laser beam, a pulsed laser beam having a small pulse energy of 0.6 ?J to 10 ?J, and an extremely small pulse width in a range of femto-second is irradiated to the sapphire substrate while a condensing point is positioned within each of regions corresponding to predetermined division lines on the sapphire substrate so that affected zones are formed, thereby the laser beam can be irradiated even at a high peak power density of 4×1013 W/cm2 to 5×1015 W/cm2, consequently each of the affected zones can be formed at only a desired condensing point within the sapphire substrate, and necessary processing can be performed while damage to nitride semiconductors or the sapphire substrate is minimized.

Abstract: A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.

Abstract: A wafer laser processing method for forming a groove by applying a pulse laser beam to the back surface of a wafer comprising light emitting elements which are formed in a plurality of areas sectioned by a plurality of dividing lines on the front surface of a sapphire substrate, along the dividing lines, wherein an energy density of a focal spot of the pulse laser beam is set to 1 J/cm2 or more.

Abstract: An insulator dash (20) installed on the interior side surface side of a dash panel (10), comprising a single sound absorbing layer (21) formed of a fiber assembly or a laminated assembly having light and soft skin layers (22,23,26,27,28) laminated on the surface of sound absorbing layer (21), wherein, since the reflected noise reflected from the inner surface of an instrument panel (40) is taken again from the front surface side into the sound absorbing layer (21) for sound absorption in addition to the sound absorbing and shielding performance of the insulator dash (20), the sound absorbing performance in the instrument panel (40) can be increased, whereby the weight can be reduced and a rise of sound pressure in the instrument panel (40) can be abolishing a conventional sound shielding layer so as to increase a silentness in a cabin.

Abstract: A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the condenser of the laser beam application means comprises a first prism for dividing the laser beam oscillated from the laser beam oscillation means into a first laser beam and a second laser beam both having a semicircular section and interchanging the first laser beam and the second laser beam, a second prism for correcting the optical paths of the first laser beam and the second laser beam formed by the first prism to become parallel each other, and an image forming lens for forming respective spots of the first laser beam and the second laser beam whose optical paths have been corrected to be parallel each other by the second prism, into images of spots having linear portions on the outer sides and arcua

Abstract: A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.

Abstract: A laser processing method for forming a laser groove along dividing lines by applying a pulse laser beam along the dividing lines formed on a workpiece, the method comprising the steps of forming the focusing spot of the pulse laser beam in a shape of oval, positioning the long axis of the oval focusing spot along each of the dividing lines, and moving the focusing spot and the workpiece along the dividing line relative to each other.

Abstract: A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.

Abstract: A knitted fabric having a set up portion comprising stitches on a front side and stitches on a back side formed by a knitting yarn for forming the knitted fabric extending zigzag from a stitch on the front side to a stitch on the back side and vice versa, wherein the knitted fabric has a set up structure wherein part 15a of the knitting yarn extending from the respective stitches on the front side to the respective stitches on the back side and part 15b of the knitting yarn extending continuously from the respective stitches on the back side to the respective stitches on the front side are crossed with each other, thereby providing less slackness in the set up portion than in a conventional set up portion.

Abstract: A knitted fabric having a set up portion comprising stitches on a front side and stitches on a back side formed by a knitting yarn for forming the knitted fabric extending zigzag from a stitch on the front side to a stitch on the back side and vice versa, wherein the knitted fabric has a set up structure wherein part 15a of the knitting yarn extending from the respective stitches on the front side to the respective stitches on the back side and part 15b of the knitting yarn extending continuously from the respective stitches on the back side to the respective stitches on the front side are crossed with each other, thereby providing less slackness in the set up portion than in a conventional set up portion.

Abstract: An insulator dash (20) installed on the interior side surface side of a dash panel (10), comprising a single sound absorbing layer (21) formed of a fiber assembly or a laminated assembly having light and soft skin layers (22,23,26,27,28) laminated on the surface of sound absorbing layer (21), wherein, since the reflected noise reflected from the inner surface of an instrument panel (40) is taken again from the front surface side into the sound absorbing layer (21) for sound absorption in addition to the sound absorbing and shielding performance of the insulator dash (20), the sound absorbing performance in the instrument panel (40) can be increased, whereby the weight can be reduced and a rise of sound pressure in the instrument panel (40) can be abolishing a conventional sound shielding layer so as to increase a silentness in a cabin.

Abstract: A disk drive includes a DVD optical head and a CD optical head. An objective lens in the CD optical head moves along a reference radial line passing through the center of rotation of an optical disk. An objective lens in the DVD optical head moves along a transfer line parallel to the reference radial line, and is disposed so that an expression R0<(Rmin+Rmax)/2 is satisfied, where Rmin and Rmax represent distances along the reference radial line between the center of rotation and the positions of the objective lens when it is disposed on the innermost and outermost tracks of the optical disk, respectively, and R0 represents a distance along the reference radial line between the center of rotation and the position of the objective lens when its tracking correction direction is towards the center of rotation of the optical disk.