Patents by Inventor Kenji Itoh

Kenji Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5820947
    Abstract: In a vapor phase apparatus such as a plasma chemical vapor deposition (CVD) having a pair of electrodes, a surface of one of the electrodes has an uneven shape (concave portion and convex portion). An interval between the electrodes is 10 mm or less. A density of a convex portion is increased in a center portion of the electrode. An aspect ratio of the uneven shape is increased from a peripheral portion of the electrode to a center portion of the electrode. The aspect ratio represents a ratio (b/a) of a pitch (a) and a height (b) of the convex portion.
    Type: Grant
    Filed: March 19, 1997
    Date of Patent: October 13, 1998
    Assignee: Semicondutor Energy Laboratory Co., Ltd.
    Inventor: Kenji Itoh
  • Patent number: 5809409
    Abstract: In order to further suppress unwanted waves which may occur when the frequency (flo) of a local oscillation wave is lower than the frequency (fin) of a signal wave, the local oscillation wave is in-phase distributed between unit mixers (2a) and (2b) whereas the signal wave is opposite-phase distributed through a 180 degree distributer (4) to the unit mixers (2a) and (2b). The unit mixers (2a) and (2b) execute frequency mixing of thus distributed local oscillation wave and signal wave, and supply the result through a BRF (16a) or (16b) into a 180 degree combiner (6). The 180 degree combiner (6) effects an opposite-phase combination of outputs of the BRFs (16a) and (16b), and outputs the result.
    Type: Grant
    Filed: October 27, 1994
    Date of Patent: September 15, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenji Itoh, Tomonori Sigematsu, Akio Iida
  • Patent number: 5801589
    Abstract: A variable divider in which a dividing number setting parameter can be set is provided in a reference oscillator. When a frequency setting parameter is selected so that a DDS will not output a spurious at a specified level or at a level higher than the specified level within an output band of an PLL in response to an output frequency from the PLL, both a conversion function setting parameter for a variable divider in the PLL and a dividing number setting parameter for a variable divider in the reference oscillator are adjusted so that the output frequency and the selected frequency setting parameter are satisfied.
    Type: Grant
    Filed: January 9, 1997
    Date of Patent: September 1, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenichi Tajima, Kenji Itoh, Shuji Nishimura, Masayuki Doi, Akio Iida
  • Patent number: 5796430
    Abstract: When defective pixels of a solid state image pickup device of a video camera are corrected by signal processes, a white spot noise is detected by closing an iris and by comparing the signal level and a level of only a dark current. Further, in this case, a gain of an AGC circuit for controlling a gain of a video signal is raised and a precise detection is executed. By executing such a detecting operation at the time of turn-on or turn-off of a power source, the user is not annoying. In the ordinary photographing, a reference level in detection of a white spot noise is set to an optimum value in accordance with a temperature of the solid state image pickup device or its peripheral temperature or the gain of the AGC circuit so that the white spot noise detection is not influenced by the temperature of the solid state image pickup device or the operating state of the AGC circuit.
    Type: Grant
    Filed: January 27, 1997
    Date of Patent: August 18, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Minoru Katoh, Kenji Itoh, Hiroyasu Ohtsubo
  • Patent number: 5784881
    Abstract: An exhaust manifold assembly including at least two manifold part members, an annular end projection of one manifold part member receiving an annular end projection of the other manifold part member to form a connection portion, further including (a) an annular slidable tubular member made of a metal material having good heat resistance and oxidation resistance and inserted into a gap between the annular end projections of both manifold part members; and (b) a flexible pipe having a corrugated pipe portion and tubular portions integrally extending from both ends of the corrugated pipe portion, the tubular portions of the flexible pipe being continuously welded to outer surfaces of the manifold part members, whereby the connection portion is completely sealed by the flexible pipe.
    Type: Grant
    Filed: January 10, 1997
    Date of Patent: July 28, 1998
    Assignee: Hitachi Metals, Ltd.
    Inventors: Koki Otsuka, Kenji Itoh
  • Patent number: 5787126
    Abstract: The detector comprises a first distributor for distributing a signal wave, a 45 degree shifter for shifting a local oscillation, a first even harmonic mixer and a second even harmonic mixer for generating a mixed wave between a double frequency wave of said local oscillation wave and said signal wave. The present invention can be used for increasing the accuracy and downsizing of quadrature mixer used in a receiving transmitting apparatus of a wireless communication system.
    Type: Grant
    Filed: February 7, 1996
    Date of Patent: July 28, 1998
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenji Itoh, Mitsuhiro Shimozawa, Kenji Kawakami, Noriharu Suematsu, Akio Iida
  • Patent number: 5766696
    Abstract: In a plasma processing apparatus including a cylindrical electrode and plural electrodes which are disposed to face the cylindrical electrode in a circumferential direction of the cylindrical electrode, the plural electrodes are designed to have the prescribed curvature corresponding to that of the surface of the cylindrical electrode. The interval between the cylindrical electrode and the plural electrodes may be fixed or stepwise varied in the circumferential direction. The area of each of the plural electrodes may be different from that of the other electrodes.
    Type: Grant
    Filed: April 25, 1997
    Date of Patent: June 16, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kenji Itoh
  • Patent number: 5702546
    Abstract: A pneumatic tire comprises a tread made from an oriented rubber so that a modulus ratio of 300% tensile modulus in a circumferential direction of the tire to 300% tensile modulus in a widthwise direction of the tire is larger by at least 0.1 times in a central region of the tread than in each side region of the tread.
    Type: Grant
    Filed: November 8, 1995
    Date of Patent: December 30, 1997
    Assignee: Bridgestone Corporation
    Inventors: Kenji Itoh, Toru Sato
  • Patent number: 5689819
    Abstract: In a transmitter-receiver having a transmitting circuit and a receiving circuit, the present invention mitigates an interference between the transmitting circuit and the receiving circuit. A quartz-crystal oscillator is provided as a common reference signal source for the local oscillators and the relation among frequencies is determined so that the frequencies such as local oscillating frequencies and intermediate frequencies within the transmitter-receiver do not overlap each other. Interferences between the transmitting circuit and the receiving circuit are mitigated to prevent a characteristic deterioration, spurious radiation, etc. Thereby the transmitter-receiver may be reduced in size and weight. Further, by sharing a quartz-crystal oscillator having a high frequency stability, narrowing of bands in radio channel spacing may be readily achieved.
    Type: Grant
    Filed: November 22, 1995
    Date of Patent: November 18, 1997
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Shuji Nishimura, Kenji Itoh
  • Patent number: 5652029
    Abstract: In a plasma processing apparatus including a cylindrical electrode and plural electrodes which are disposed to face the cylindrical electrode in a circumferential direction of the cylindrical electrode, the plural electrodes are designed to have the prescribed curvature corresponding to that of the surface of the cylindrical electrode. The interval between the cylindrical electrode and the plural electrodes may be fixed or stepwise varied in the circumferential direction. The area of each of the plural electrodes may be different from that of the other electrodes.
    Type: Grant
    Filed: March 23, 1995
    Date of Patent: July 29, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kenji Itoh
  • Patent number: 5625413
    Abstract: When defective pixels of a solid state image pickup device of a video camera are corrected by signal processes, a white spot noise is detected by closing an iris and by comparing the signal level and a level of only a dark current. Further, in this case, a gain of an AGC circuit for controlling a gain of a video signal is raised and a precise detection is executed. By executing such a detecting operation at the time of turn-on or turn-off of a power source, the user is not annoying. In the ordinary photographing, a reference level in detection of a white spot noise is set to an optimum value in accordance with a temperature of the solid state image pickup device or its peripheral temperature or the gain of the AGC circuit so that the white spot noise detection is not influenced by the temperature of the solid state image pickup device or the operating state of the AGC circuit.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: April 29, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Minoru Katoh, Kenji Itoh, Hiroyasu Ohtsubo
  • Patent number: 5624584
    Abstract: A process for reducing deformation of a holder arm, which holds a head of a data recording device, includes cutting a metal body to form the holder arm and contouring a tip of the holder arm by wire cutting. The step of contouring preferably includes steps of placing a voltage between the metal body and a wire, moving the wire, and bringing the wire adjacent the metal body to contour the tip of the holder arm.
    Type: Grant
    Filed: December 12, 1995
    Date of Patent: April 29, 1997
    Assignee: NEC Corporation
    Inventors: Hiroshi Koriyama, Norio Tagawa, Kenji Itoh, Misa Iwamoto, Takahiro Suzuki
  • Patent number: 5609774
    Abstract: A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
    Type: Grant
    Filed: February 10, 1994
    Date of Patent: March 11, 1997
    Assignee: Semiconductor Energy Laboratory Co., Inc.
    Inventors: Shunpei Yamazaki, Masaya Kadono, Kenji Itoh, Toru Takayama, Yasuyuki Arai, Noriya Ishida
  • Patent number: 5454328
    Abstract: A transport system installed in a cleanroom where clean air is caused to flow from a ceiling toward a floor. The transport system includes a vehicle for transporting loads, and a guide rail suspended from the ceiling to guide the vehicle. The vehicle has a main body for running along the guide rail, a load supporting deck disposed over the main body, and connecting members for interconnecting the main body and load supporting deck. The guide rail is enclosed in a tubular cover defining an opening extending longitudinally of the guide rail for receiving the connecting members. The cover has a substantially streamline configuration with respect to the direction of clean air flows.
    Type: Grant
    Filed: November 5, 1993
    Date of Patent: October 3, 1995
    Assignee: Daifuku Co., Ltd.
    Inventors: Hiroshi Matsuzaki, Tetsuo Ajimine, Yukio Iizuka, Kenji Itoh, Katsuhiko Ueda
  • Patent number: 5368937
    Abstract: The present invention discloses a carbon film on a substrate formed by increasing a bias voltage during a plasma CVD process, wherein the entire carbon film is amorphous and the hardness of the film increases away from the substrate in the direction of the thickness of the film.
    Type: Grant
    Filed: December 12, 1990
    Date of Patent: November 29, 1994
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kenji Itoh
  • Patent number: 5318848
    Abstract: A packing material for a liquid chromatograph is provided particularly to be used for separating polycyclic aromatic compounds. The packing material is prepared by treating a base material of the packing material with a coupling agent of the formula (I): ##STR1## wherein Aro is an aromatic moiety, R.sup.1 and R.sup.2 are independently alkyl, alkenyl, aryl, lower alkoxy group, or halogen atom, R.sup.3 is a lower alkoxy group or halogen atom. Since an aromatic moiety within one molecule is immobilized through many functional groups on the surface of the base material, the packing material has stable and excellent separating properties.
    Type: Grant
    Filed: September 24, 1991
    Date of Patent: June 7, 1994
    Assignee: Shiseido Company Ltd.
    Inventors: Kenji Itoh, Hideo Nagashima, Kiyokatsu Jinno, Yutaka Ohtsu
  • Patent number: 5302226
    Abstract: A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.
    Type: Grant
    Filed: May 29, 1992
    Date of Patent: April 12, 1994
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Naoki Hirose, Masaya Kadono, Kenji Itoh, Toru Takayama, Yasuyuki Arai, Noriya Ishida
  • Patent number: 5227196
    Abstract: A lamination of films is comprised of at least two film layers wherein a first film with the smallest internal stress is provided for the first layer directly on the substrate, and a second film is provided with the second smallest amount of internal stress for the second layer on the first layer, and when more than two layers are provided, additional layers of films are provided with increasing magnitude of internal stress, in sequence, in the direction of lamination from the side of the substrate. In accordance with one aspect, the hydrogen concentration of a silicon nitride layer is controlled to obtain optimum properties of the silicon nitride layer as a buffer layer between a carbon layer and an oxide substrate.
    Type: Grant
    Filed: September 26, 1991
    Date of Patent: July 13, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kenji Itoh
  • Patent number: 5225367
    Abstract: A method of manufacturing an electronic device using boron nitrides comprises the steps of adding impurities in boron nitrides by ion implantation to form a doped region and directing a laser beam onto the doped region while the boron nitrides are placed in a vacuum or a non-oxidizing atmosphere.
    Type: Grant
    Filed: August 15, 1990
    Date of Patent: July 6, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenji Itoh, Masaya Kadono, Naoki Hirose
  • Patent number: 5196366
    Abstract: A method of manufacturing electric devices is described. Discrete single crystals are formed on a substrate to be coated. The formation of these crystals is carried out by forming discrete crystallization centers in the surface of the substrate and growing a single crystal from each center. The spaces separating these crystals are filled with an insulating material in order not to form short current paths therein. The top surfaces of the crystals are exposed in order to make contact with an upper electrode.
    Type: Grant
    Filed: August 15, 1990
    Date of Patent: March 23, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenji Itoh, Masaya Kadono, Naoki Hirose