Patents by Inventor Kenji Itoh

Kenji Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5190824
    Abstract: An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and a high conductivity, and a third film having a high hardness and a high resistivity providing an abrasion-proof insulating external surface.
    Type: Grant
    Filed: February 26, 1991
    Date of Patent: March 2, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kenji Itoh
  • Patent number: 5184093
    Abstract: A frequency synthesizer, including a direct digital synthesizer (DDS) for providing wave amplitude data as a standard signal source, and a phase lock loop for comparing a branched synthesizer frequency with the standard signal source at a phase comparator. A frequency converter converts the output frequency of the DDS to a higher frequency and provides the resultant higher frequency to the phase comparator in the phase loop. A small loop dividing ratio is obtained by converting the low frequency of the DDS to a higher frequency. A spurious of the synthesizer output signal is reduced and provides a low power consumption apparatus.
    Type: Grant
    Filed: February 25, 1992
    Date of Patent: February 2, 1993
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenji Itoh, Akio Iida, Shuji Urasaki
  • Patent number: 5176791
    Abstract: Cleaning a device to make a film made from carbon or containing carbon as a main ingredient is carried out by etching the interior of a deposition chamber where the film is formed, with an etching gas in a plasma state selected from the group of hydrogen, oxygen, and a gaseous fluoride, and then cleaning the interior of the deposition chamber with a cleaning gas selected from the group of argon and hydrogen in a plasma state.
    Type: Grant
    Filed: July 15, 1991
    Date of Patent: January 5, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenji Itoh, Osamu Aoyagi
  • Patent number: 5140359
    Abstract: An auto focusing device for foreseeing-calculating lens driving data for making a lens focus on an object after a predetermined time on the basis of the past focus adjusting operation data and the latest focus detection data. A plurality of distance measuring points are read to effect distance measurements at a time. Data suitable for foreseeing calculation is found from the respective distance measuring points, and the data suitable for foreseeing calculation is specified as the latest focus detection data used for the foreseeing calculation.
    Type: Grant
    Filed: April 15, 1991
    Date of Patent: August 18, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaki Higashihara, Ichiro Ohnuki, Akira Akashi, Terutake Kadohara, Hidehiko Fukahori, Yasuo Suda, Kenji Itoh
  • Patent number: 5140253
    Abstract: A control device for a motor vehicle alternating current generator for controlling a field current of the generator with use of voltage control circuitry and field current limiting circuitry, wherein a field current limiting value is varied successively based on the detected output voltage of the generator and the field current is increased smoothly upon an increased demand.
    Type: Grant
    Filed: January 8, 1990
    Date of Patent: August 18, 1992
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kenji Itoh
  • Patent number: 5129443
    Abstract: A method of manufacturing a heat resistant member includes the step of designing the shape of the heat resistant member, including the substeps of estimating thermal stress of the heat resistant member by heating a model formed by a high-thermal expansion material which has a similar shape to the desired shape of the heat resistant member while the model is restrained and also while it is free. The high-thermal expansion material is different from the material of the member being modeled and has a thermal expansion coefficient greater than that of the material of the member being modeled. Additionally, the step of designing includes the substeps of measuring the strain of the model at each of a plurality of predetermined positions while the model is heated by strain gauges adhered to predetermined positions on the model, and calculating the stress at each predetermined position from the difference in measured strain values between the restraint state and the free state.
    Type: Grant
    Filed: July 3, 1991
    Date of Patent: July 14, 1992
    Assignee: Hitachi Metals, Ltd.
    Inventors: Mitsuru Yano, Hisashi Yasuda, Masatoshi Nakamizo, Takashi Hattori, Kenji Itoh
  • Patent number: 5119119
    Abstract: A data imprinting device of the type in which data are imprinted on the film surface during the time when the film is transported. The device includes a data exposure device positioned on the presser plate which presses the film against the film gate of the camera in fixedly secured relation at a location corresponding to the vicinity of the path of movement of the film and a prohibitor responsive to accidental interruption of the film transportation for prohibiting further imprinting of data until the next frame, which came across the data exposure making device at the time of the accidental interruption, is brought into alignment with the data exposure making means as the film transportaion has been re-started.
    Type: Grant
    Filed: February 5, 1991
    Date of Patent: June 2, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kenichiro Amano, Jiro Kazumi, Sinichi Tsujimoto, Kenji Itoh, Masaaki Ishihara
  • Patent number: 5102498
    Abstract: It is proposed to widen the application of wet etching by making use of excellent masks. In advance of actually etching of the surface to be etched, the surface is coated with a patterned carbon coating as a mask by CVD. The carbon coating has a high degree of hardness comparable to that of diamond and has an excellent resistance to the attack of chemicals.
    Type: Grant
    Filed: October 31, 1990
    Date of Patent: April 7, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenji Itoh, Osamu Aoyagi
  • Patent number: 5091742
    Abstract: An auto focusing device or a camera including such a device has a focus detecting circuit for detecting the defocus states of a plurality of objects. A calculation circuit calculates a lens position and an aperture value which are capable of placing at least two of the plurality of objects in focus on the basis of the detected defocus states. When a defocus amount difference between the two objects is outside of a predetermined range, the calculation circuit calculates a lens position capable of placing two other objects, the defocused amount difference between which is within the predetermined range, in focus.
    Type: Grant
    Filed: March 27, 1990
    Date of Patent: February 25, 1992
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hidehiko Fukahori, Yasuo Suda, Kenji Itoh, Masaki Higashihara, Keisuke Aoyama
  • Patent number: 5048346
    Abstract: A method of estimating a thermal stress of a heat-resistant member, part or the whole of which is to be heated to a high temperature, comprising heating a model formed by a high-thermal expansion material and having a shape similar to that of the heat-resistant member; and measuring a thermal strain of the model at each of predetermined positions by strain gauges adhered thereto.
    Type: Grant
    Filed: March 29, 1990
    Date of Patent: September 17, 1991
    Assignee: Hitachi Metals, Ltd.
    Inventors: Mitsuru Yano, Hisashi Yasuda, Masatoshi Nakamizo, Takashi Hattori, Kenji Itoh
  • Patent number: 5022959
    Abstract: A substrate having a film to be etched is coated with a carbon film. The carbon film is then coated with an organic mask. The mask is then patterned to expose portions of the carbon film. Plasma etching is then utilized to remove portions of the carbon film not covered by the mask, followed by wet etching to form a predetermined pattern in the film on the substrate.
    Type: Grant
    Filed: August 11, 1989
    Date of Patent: June 11, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kenji Itoh, Osamu Aoyagi
  • Patent number: 5017264
    Abstract: An etching method for eliminating carbon material is described. After disposing a substrate to be treated in a CVD reaction chamber, NF.sub.3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The carbon material elimination can be applied for chamber cleaning so as to removing carbon deposited debris from the inside of the chamber.
    Type: Grant
    Filed: September 14, 1990
    Date of Patent: May 21, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenji Itoh
  • Patent number: 5007374
    Abstract: An apparatus suitable for mass-production of carbon coatings having a high degree of hardness. The apparatus utilized two types of energy input. First energy is inputted to a pair of electrodes provided in a reaction chamber, between which electrodes a deposition space is defined. A number of substrates to be coated are mounted on a plurality of substrate holders which are supplied with a second electric energy. The holders are arranged parallel to the electric field to prevent disturbance of the electric field.
    Type: Grant
    Filed: March 17, 1989
    Date of Patent: April 16, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Shinji Imatou, Mitsunori Tsuchiya, Kenji Itoh, Takashi Inushima, Atsushi Kawano
  • Patent number: 4996079
    Abstract: While CVD (chemical vopour reaction) methods and enhanced CVD methods for coating a substrate with a carbon coating have recently been attracting considerable interest, there have occurred hitherto rubbing-off of the carbon coating from the underlying substrate due to differential thermal expansion or contraction. The present invention discloses a modification of the conventional CVD process for carbon deposition in accordance with which the deposition condition is changed in order that the hardness of the carbon coating at the interface between the coating and the underlying substrate is lower than that at the external surface of the coating.
    Type: Grant
    Filed: February 17, 1989
    Date of Patent: February 26, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Kenji Itoh
  • Patent number: 4974542
    Abstract: A photochemical vapor reaction apparatus wherein a silicon film is deposited by photo-CVD. The photo-CVD is implemented by irradiating a reactive gas with ultraviolet rays which are emitted from a mercury lamp. The emission of the mercury lamp becomes continuous when the frequency of input power is 20 KHz or higher. By virtue of such a continuous light, the deposition is implemented uniformly and a close-packed and hard film can be formed.
    Type: Grant
    Filed: May 5, 1988
    Date of Patent: December 4, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shigenori Hayashi, Kenji Itoh
  • Patent number: 4975144
    Abstract: An etching method for selectively eliminating carbon material deposited on a substrate is described. A layer of masking material may be applied over areas of the carbon coating whose removal is not desired. After disposing the substrate coated with the carbon material in a CVD reaction chamber, NF.sub.3 is admitted to the chamber and converted into a plasma etchant comprising fluorine ions or radicals by inputting high frequency energy. The fluorine ions or radicals remove all unmasked carbon, leaving a carbon film pattern on the substrate which may be used in the manufacture of an IC. The carbon material elimination method can also be used for chamber cleaning to removing carbon deposited debris from the inside of the CVD reaction chamber.
    Type: Grant
    Filed: March 17, 1989
    Date of Patent: December 4, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenji Itoh
  • Patent number: 4970368
    Abstract: In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.
    Type: Grant
    Filed: April 6, 1989
    Date of Patent: November 13, 1990
    Assignee: Semiconductor Energy Laboratory Co. Ltd.
    Inventors: Shunpei Yamazaki, Kenji Itoh, Susumu Nagayama
  • Patent number: 4970369
    Abstract: In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.
    Type: Grant
    Filed: April 6, 1989
    Date of Patent: November 13, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kenji Itoh, Susumu Nagayama
  • Patent number: 4949004
    Abstract: A mercury-vapor lamp is provided with a reservoir in which a superfluous amount of mercury is stored in the form of liquid state. The liquid mercury in the reservoir is cooled to a certain temperature. The pressure of mercury-vapor is automatically reduced to the saturated pressure of the liquid mercury cooled. In this configuration, the pressure of mercury-vapor is controlled by adjusting the temperature of the liquid mercury stored in the reservoir.
    Type: Grant
    Filed: February 8, 1989
    Date of Patent: August 14, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takashi Inujima, Kazuo Urata, Mamoru Tashiro, Yuji Tanamura, Shinji Imato, Kenji Itoh, Seiichi Odaka, Shigenori Hayashi, Naoki Hirose
  • Patent number: 4910451
    Abstract: A voltage regulator circuit for an AC generator of an automobile is disclosed. The circuit comprises, in addition to the conventional elements, a transistor turned on and off in phase with the power transistor by the control transistor of the voltage detecting circuit. The collector of this additional transistor is coupled to the positive terminal of the battery through a resistor, while the emitter thereof is grounded. A serial circuit of a resistor and a capacitor forming a positive feedback circuit is coupled across the collector of this additional transistor and the base of the control transistor, a biasing resistor being coupled across the base and emitter of the control transistor. Thus, when the control transistor is turned on, the charging current of the capacitor produces a forward bias across the base and emitter of the control transistor; when the control transistor is turned off, the discharging current of the capacitor produces a reverse bias thereacross.
    Type: Grant
    Filed: February 7, 1989
    Date of Patent: March 20, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Shiro Iwatani, Kenji Itoh