Patents by Inventor Kenji Kameda

Kenji Kameda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11001923
    Abstract: A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: May 11, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Noriyuki Isobe, Kenji Kameda, Koichi Oikawa
  • Patent number: 10998647
    Abstract: A wire includes a core wire, an insulating coating that covers an outer periphery of a non-distal end region as a part of the core wire other than the distal end region, and a distal end seal part that is disposed separately from the insulating coating and seals the distal end part of the distal end region of the core wire. The core wire is exposed between the distal end seal part and the insulating coating. The distal end seal part includes a tubular distal end cover part that covers an outer periphery of the distal end part and a welded part that is crushed in an orthogonal direction orthogonal to a wire direction and is closed by welding.
    Type: Grant
    Filed: May 11, 2018
    Date of Patent: May 4, 2021
    Assignee: Japan Aviation Electronics Industry, Ltd.
    Inventors: Kenji Kameda, Kazuomi Sato, Kenji Yamazaki, Hayato Nakamura
  • Patent number: 10968517
    Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: April 6, 2021
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shin Sone, Masaya Nagato, Kenji Kameda, Kotaro Konno
  • Publication number: 20210036440
    Abstract: A wire includes a core wire and an insulation coating that covers an outer periphery of the core wire. The core wire includes a distal end region containing a distal end surface of the core wire, and a body region being a part other than the distal end region. The distal end region includes a first distal end region containing the distal end surface, and a second distal end region located between the first distal end region and the body region. The insulation coating includes a distal end coating part that covers an outer periphery of the first distal end region in a tube shape, an insulation coating body that covers an outer periphery of the body region in a tube shape, a coating joint part that joins the distal end coating part and the insulation coating body together.
    Type: Application
    Filed: February 19, 2019
    Publication date: February 4, 2021
    Applicant: Japan Aviation Electronics Industry, Ltd.
    Inventors: Kenji KAMEDA, Kazuomi SATO, Kenji YAMAZAKI, Hayato NAKAMURA, Takaichi TERAMOTO
  • Publication number: 20200373150
    Abstract: There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.
    Type: Application
    Filed: May 19, 2020
    Publication date: November 26, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shintaro KOGURA, Kazuhiro HARADA, Shogo OTANI, Koichi HONDA, Mamoru UMEMOTO, Kazuhiro SHIMODA, Akihito YOSHINO, Naoko KITAGAWA, Kenji KAMEDA
  • Patent number: 10804100
    Abstract: There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: October 13, 2020
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kimihiko Nakatani, Kenji Kameda, Atsushi Sano, Tatsuru Matsuoka
  • Patent number: 10724137
    Abstract: According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: July 28, 2020
    Assignee: KOKUSAI ELETRIC CORPORATION
    Inventors: Osamu Morita, Shinichiro Mori, Kenji Kameda
  • Publication number: 20200152444
    Abstract: There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Atsushi SANO, Kimihiko NAKATANI, Tatsuru MATSUOKA, Kenji KAMEDA, Satoshi SHIMAMOTO
  • Publication number: 20200135455
    Abstract: There is provided a technique that includes filling a concave portion formed on a surface of a substrate with a first film and a second film by performing: (a) forming the first film having a hollow portion using a first precursor so as to fill the concave portion formed on the surface of the substrate; (b) etching a portion of the first film which makes contact with the hollow portion, using an etching agent; and (c) forming the second film on the first film of which the portion is etched, using a second precursor, wherein (b) includes performing, a predetermined number of times: (b-1) modifying a portion of the first film using a modifying agent; and (b-2) selectively etching the modified portion of the first film using the etching agent.
    Type: Application
    Filed: December 27, 2019
    Publication date: April 30, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kimihiko NAKATANI, Hiroshi ASHIHARA, Motomu DEGAI, Kenji KAMEDA
  • Publication number: 20200083616
    Abstract: A wire includes a core wire, an insulating coating that covers an outer periphery of a non-distal end region as a part of the core wire other than the distal end region, and a distal end seal part that is disposed separately from the insulating coating and seals the distal end part of the distal end region of the core wire. The core wire is exposed between the distal end seal part and the insulating coating. The distal end seal part includes a tubular distal end cover part that covers an outer periphery of the distal end part and a welded part that is crushed in an orthogonal direction orthogonal to a wire direction and is closed by welding.
    Type: Application
    Filed: May 11, 2018
    Publication date: March 12, 2020
    Applicant: Japan Aviation Electronics Industry, Ltd.
    Inventors: Kenji KAMEDA, Kazuomi SATO, Kenji YAMAZAKI, Hayato NAKAMURA
  • Publication number: 20190255576
    Abstract: There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).
    Type: Application
    Filed: February 20, 2019
    Publication date: August 22, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Koei KURIBAYASHI, Kenji KAMEDA, Tsukasa KAMAKURA, Takeo HANASHIMA, Hiroaki HIRAMATSU, Shinya EBATA, Hiroto YAMAGISHI, Sadao HISAKADO, Takafumi SASAKI, Takatomo YAMAGUCHI, Shuhei SAIDO
  • Publication number: 20190127848
    Abstract: In the disclosure, a processing method is provided. The method includes: (a) processing a substrate accommodated in a substrate holding region of a substrate retainer in a process chamber at a first temperature, the substrate retainer including a heat insulating region on one end thereof and the substrate holding region on the other end thereof; (b) supplying a cleaning gas to the heat insulating region at a second temperature variable within a temperature range lower than the first temperature and higher than a room temperature after unloading the substrate accommodated in the substrate retainer; and (c) supplying the cleaning gas to the substrate holding region at a third temperature variable within another temperature range lower than the second temperature after unloading the substrate accommodated in the substrate retainer.
    Type: Application
    Filed: December 10, 2018
    Publication date: May 2, 2019
    Inventors: Masaya NAGATO, Shin SONE, Kenji KAMEDA, Masayuki TSUNEDA, Masato TERASAKI
  • Publication number: 20190096660
    Abstract: There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.
    Type: Application
    Filed: September 18, 2018
    Publication date: March 28, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Kimihiko NAKATANI, Kenji KAMEDA, Atsushi SANO, Tatsuru MATSUOKA
  • Publication number: 20190085459
    Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.
    Type: Application
    Filed: November 19, 2018
    Publication date: March 21, 2019
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Shin SONE, Masaya NAGATO, Kenji KAMEDA, Kotaro KONNO
  • Patent number: 10176988
    Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: January 8, 2019
    Assignee: Kokusai Electric Corporation
    Inventors: Ryota Horiike, Kenji Kameda
  • Patent number: 10156012
    Abstract: There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: December 18, 2018
    Assignees: KOKUSAI ELECTRIC CORPORATION, CENTRAL GLASS CO., LTD.
    Inventors: Kenji Kameda, Masaya Nagato, Akiou Kikuchi, Yuta Takeda, Kunihiro Yamauchi
  • Patent number: 10153153
    Abstract: An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: December 11, 2018
    Assignee: CENTRAL GLASS COMPANY, LIMITED
    Inventors: Akiou Kikuchi, Masanori Watari, Kenji Kameda, Shin Hiyama, Yasutoshi Tsubota
  • Patent number: 10121647
    Abstract: An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: November 6, 2018
    Assignee: CENTRAL GLASS COMPANY, LIMITED
    Inventors: Akiou Kikuchi, Masanori Watari, Kenji Kameda, Shin Hiyama, Yasutoshi Tsubota
  • Publication number: 20180240665
    Abstract: There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.
    Type: Application
    Filed: February 20, 2018
    Publication date: August 23, 2018
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Atsushi SANO, Kenji KAMEDA, Yushin TAKASAWA
  • Patent number: 9976214
    Abstract: A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature; (b) elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature; and (c) supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the first temperature is a temperature whereat the gas containing fluorine is not activated, and the second temperature is a temperature whereat the gas containing fluorine is activated.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: May 22, 2018
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Masaya Nagato, Koei Kuribayashi, Kenji Kameda