Patents by Inventor Kenji Kameda
Kenji Kameda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190096660Abstract: There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.Type: ApplicationFiled: September 18, 2018Publication date: March 28, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Kimihiko NAKATANI, Kenji KAMEDA, Atsushi SANO, Tatsuru MATSUOKA
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Publication number: 20190085459Abstract: There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.Type: ApplicationFiled: November 19, 2018Publication date: March 21, 2019Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Shin SONE, Masaya NAGATO, Kenji KAMEDA, Kotaro KONNO
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Patent number: 10176988Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.Type: GrantFiled: June 23, 2017Date of Patent: January 8, 2019Assignee: Kokusai Electric CorporationInventors: Ryota Horiike, Kenji Kameda
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Patent number: 10156012Abstract: There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.Type: GrantFiled: September 5, 2017Date of Patent: December 18, 2018Assignees: KOKUSAI ELECTRIC CORPORATION, CENTRAL GLASS CO., LTD.Inventors: Kenji Kameda, Masaya Nagato, Akiou Kikuchi, Yuta Takeda, Kunihiro Yamauchi
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Patent number: 10153153Abstract: An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.Type: GrantFiled: March 13, 2017Date of Patent: December 11, 2018Assignee: CENTRAL GLASS COMPANY, LIMITEDInventors: Akiou Kikuchi, Masanori Watari, Kenji Kameda, Shin Hiyama, Yasutoshi Tsubota
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Patent number: 10121647Abstract: An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.Type: GrantFiled: March 13, 2017Date of Patent: November 6, 2018Assignee: CENTRAL GLASS COMPANY, LIMITEDInventors: Akiou Kikuchi, Masanori Watari, Kenji Kameda, Shin Hiyama, Yasutoshi Tsubota
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Publication number: 20180240665Abstract: There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.Type: ApplicationFiled: February 20, 2018Publication date: August 23, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Atsushi SANO, Kenji KAMEDA, Yushin TAKASAWA
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Patent number: 9976214Abstract: A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature; (b) elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature; and (c) supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the first temperature is a temperature whereat the gas containing fluorine is not activated, and the second temperature is a temperature whereat the gas containing fluorine is activated.Type: GrantFiled: February 16, 2017Date of Patent: May 22, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masaya Nagato, Koei Kuribayashi, Kenji Kameda
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Publication number: 20180057936Abstract: There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.Type: ApplicationFiled: September 5, 2017Publication date: March 1, 2018Applicants: HITACHI KOKUSAI ELECTRIC INC., CENTRAL GLASS CO., LTD.Inventors: Kenji KAMEDA, Masaya NAGATO, Akiou KIKUCHI, Yuta TAKEDA, Kunihiro YAMAUCHI
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Patent number: 9856560Abstract: The method according to the invention includes the steps of: purging an inside of the processing chamber with gas while applying a thermal impact onto the thin film deposited on the inside of the processing chamber by decreasing the temperature in the processing chamber, so as to forcibly generate a crack in the thin film and forcibly peel the adhered material with a weak adhesive force, in a state where the substrate is not present in the processing chamber; removing the thin film deposited on the inside of the processing chamber by supplying a fluorine-based gas to the inside of the processing chamber heated to a first temperature, in the state where the substrate is not present in the processing chamber; and removing an adhered material remaining on the inside of the processing chamber after removing the thin film by supplying a fluorine-based gas to the inside of the processing chamber heated to a second temperature, in the state where the substrate is not present in the processing chamber.Type: GrantFiled: February 23, 2009Date of Patent: January 2, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kenji Kameda, Jie Wang, Yuji Urano
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Publication number: 20170372890Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.Type: ApplicationFiled: June 23, 2017Publication date: December 28, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Ryota HORIIKE, Kenji KAMEDA
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Publication number: 20170260626Abstract: A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature; (b) elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature; and (c) supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the first temperature is a temperature whereat the gas containing fluorine is not activated, and the second temperature is a temperature whereat the gas containing fluorine is activated.Type: ApplicationFiled: February 16, 2017Publication date: September 14, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Masaya NAGATO, Koei KURIBAYASHI, Kenji KAMEDA
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Publication number: 20170200602Abstract: An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.Type: ApplicationFiled: March 13, 2017Publication date: July 13, 2017Inventors: Akiou KIKUCHI, Masanori Watari, Kenji Kameda, Shin Hiyama, Yasutoshi Tsubota
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Patent number: 9683288Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.Type: GrantFiled: February 19, 2014Date of Patent: June 20, 2017Assignee: Hitachi Kokusai Electric Inc.Inventors: Kenji Kameda, Jun Sonobe, Yudai Tadaki
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Patent number: 9587308Abstract: A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove on surfaces of members in the process chamber by a thermochemical reaction, changing in internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction.Type: GrantFiled: February 13, 2015Date of Patent: March 7, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kenji Kameda, Ryuji Yamamoto, Yuji Urano
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Patent number: 9540727Abstract: A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.Type: GrantFiled: February 27, 2014Date of Patent: January 10, 2017Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Kenji Kameda, Jun Sonobe, Yudai Tadaki
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Publication number: 20160362784Abstract: A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.Type: ApplicationFiled: June 7, 2016Publication date: December 15, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Noriyuki ISOBE, Kenji KAMEDA, Koichi OIKAWA
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Publication number: 20160218012Abstract: A fine pattern-forming method includes: a core pattern-forming step of forming a core pattern of a predetermined line width at a substrate surface side; a sidewall-forming step of forming a sidewall on the core pattern formed in the core pattern-forming step; and a core pattern removing step of removing the core pattern in a state where the sidewall is left, by using an etching gas after the sidewall-forming step, and is configured such that, in the core pattern removing step, a film deposited at a substrate back side in the core pattern-forming step is removed in parallel to the removal of the core pattern.Type: ApplicationFiled: September 29, 2014Publication date: July 28, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Satoshi SHIMAMOTO, Toshiyuki KIKUCHI, Jiro YUGAMI, Yoshiro HIROSE, Yuichi WADA, Kenji KANAYAMA, Hiroshi ASHIHARA, Kenji KAMEDA
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Publication number: 20160211151Abstract: Etching having high selectivity is performed within a plane of a substrate. To this end, a substrate processing apparatus includes a substrate support where a substrate including a first film containing at least silicon and a second film having a silicon content ratio lower than that of the first film is placed; a process chamber wherein the substrate support is disposed; a gas supply system configured to supply an etching gas to the substrate; a coolant channel disposed in the substrate support and having a coolant flowing therein; a coolant flow rate controller configured to control a flow rate of the coolant supplied to the coolant channel; a control unit configured to control at least the coolant flow rate controller such that a temperature of the substrate is maintained whereat an etch rate of the first film is higher than that of the second film while the etching gas is in contact with the substrate; and an exhaust system configured to exhaust an inner atmosphere of the process chamber.Type: ApplicationFiled: July 26, 2013Publication date: July 21, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yasutoshi TSUBOTA, Yuichi WADA, Kenji KAMEDA, Shin HIYAMA
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Publication number: 20160155630Abstract: A method for manufacturing a semiconductor device includes: supplying a remover to a substrate including a Si-containing film on which a denatured layer is formed in order to remove the denatured layer; supplying a processing gas containing two or more halogen elements to the substrate in order to remove the Si-containing film; and supplying the remover to the substrate after the act of removing the Si-containing film in order to remove a residue of the denatured layer left after the act of removing the Si-containing film.Type: ApplicationFiled: January 27, 2016Publication date: June 2, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yasutoshi TSUBOTA, Shin HIYAMA, Yuichi WADA, Kenji KAMEDA