Abstract: According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period.

Abstract: Provided is a method of manufacturing a semiconductor device wherein a cleaning process on the inside of an exhaust buffer chamber may be performed sufficiently and satisfactorily even if gases are exhausted using the exhaust buffer chamber. The method includes: (a) processing a substrate placed on a substrate placing surface in a processing space by supplying gases onto the substrate in the processing space through a side facing the substrate placing surface while exhausting the gases from the processing space using an exhaust buffer chamber including a space surrounding an outer circumference of a side portion of the processing space; and (b) cleaning and inside of the exhaust buffer chamber by supplying a cleaning gas into the exhaust buffer chamber through a cleaning gas supply pipe communicating with the space of the exhaust buffer chamber.

Abstract: A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove deposits including a film deposited on surfaces of members in the process chamber by a thermochemical reaction, changing an internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction.

Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device, which perform a cleaning process on the inside of an exhaust buffer chamber even if gases are exhausted using the exhaust buffer chamber. The substrate processing apparatus includes a processing space to process a substrate on a substrate placing surface, a gas supply system to supply gases into the processing space through a side facing the substrate placing surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, a gas exhaust system configured to exhaust the gases supplied into the exhaust buffer chamber, and a cleaning gas supply pipe configured to supply a cleaning gas into the exhaust buffer chamber.

Abstract: There is provided a method of cleaning an inside of a process chamber, which is formed by a reaction tube and a manifold configured to support the reaction tube and installed under a heater, after forming a stacked film of oxide and nitride films on a substrate in the process chamber by alternately performing forming the oxide film on the substrate and forming the nitride film thereon. The method includes supplying a hydrogen-free fluorine-based gas from a first nozzle, which is installed in the manifold to extend upward from the manifold to an inside of the reaction tube, to an inner wall of the reaction tube; and supplying a hydrogen fluoride gas from a second nozzle, which is installed in the manifold, to an inner wall of the manifold.

Abstract: To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.

Abstract: A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.

Abstract: A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type betwee

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.

Abstract: To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.

Abstract: A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

Abstract: Map display systems, map data processing apparatuses, map display apparatuses, and map display methods for general navigation systems are provided. A map data processing section categorizes original three-dimensional map data into scene graph data representing a data structure of a three-dimensional map using a tree structure and rendering data for rendering an object included in the three-dimensional map and processes the scene graph data and the rendering data. A map data display section specifies a display area by referring to the scene graph data and reads and displays the rendering data in accordance with the specified display area.

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

Abstract: An object of the invention is to provide a substance that activates saccharide uptake in epidermal cells and is thus expected to be effective in promoting skin cell neogenesis and metabolism. The invention provides a promoter for saccharide uptake in epidermal keratinocytes which comprises a purine base or a salt thereof as an active ingredient. The present invention further provides a method of promoting saccharide uptake in epidermal keratinocytes, comprising applying a purine base or a salt thereof to the skin.

Abstract: A method of manufacturing a semiconductor device has: carrying a substrate into a process chamber; depositing a thin film on the substrate by supplying inside the process chamber a first film deposition gas including at least one element among plural elements forming a thin film to be deposited and capable of accumulating a film solely and a second film deposition gas including at least another element among the plural elements and incapable of accumulating a film solely; carrying the substrate on which is deposited the thin film out from inside the process chamber; and removing a first sediment adhering to an interior of the process chamber and a second sediment adhering to an interior of the supply portion and having a chemical composition different from a chemical composition of the first sediment by supplying cleaning gases inside the process chamber and inside a supply portion that supplies the first film deposition gas while changing at least one of a supply flow rate, a concentration, and a type betwee

Abstract: An animation generating apparatus for generating a three-dimensional animation tracking a moving object includes a camera parameter setting section setting a point of regard and a point of view based on a current position of the moving object using route data indicating a route of the moving object so that the point of regard is located on the route and the point of view is located behind the point of regard along the route, and a rendering processor generating an image by retrieving necessary rendering data from three-dimensional map data based on the point of regard and point of view set by the camera parameter setting section.