Abstract: A phase modulation device corrects wave front aberrations generated by an optical system including an objective lens disposed on an optical path of a light flux. The phase modulation device includes a phase modulation element which includes a plurality of electrodes, and modulates the phase of the light flux in accordance with a voltage applied to each electrode, and a control circuit which controls the voltage to be applied to each electrode. The control circuit controls the voltage to be applied to each electrode in such a manner that the light flux is imparted with a phase modulation amount in accordance with a phase modulation profile having a polarity opposite to the polarity of a phase distribution to be determined according to a relational equation representing a relationship between a numerical aperture of the objective lens and a ratio between third-order spherical aberration and fifth-order spherical aberration.

Abstract: A front panel, a touchpad, and a display cell are adhered and fixed, and these and a back light are held by a bracket to construct a display body unit. When the display body unit is mounted on a support, the front panel is fixed to the support with an adhesive layer therebetween. In this state, each of mounting portions has position adjustability in the vertical direction (Z direction). In the state having position adjustability, the mounting portion is fixed to the support by a fixing mechanism.

Abstract: A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion.

Abstract: An information processing device includes an ink distribution amount computation unit that computes an i-th (where i is an integer greater than or equal to one) ink distribution amount distributed to an i-th recording job which is performed by a recording apparatus according to an i-th ink distribution ratio obtained from division of an i-th total consumption amount cumulative total by an i-th recording consumption amount cumulative total.

Abstract: An example computer 10 that manages folders containing files by using a tree structure is caused to execute a step S104 of identifying a superior folder from predetermined folders managed by the tree structure by retracing the tree structure by at least one level, and a step S501 of specifying a file belonging to a subordinate folder that is subordinate to the superior folder in the tree structure as a processing object.

Abstract: A film forming method performs a film forming process on a target object having on a surface thereof an insulating layer. The film forming method includes a first thin film forming step of forming a first thin film containing a first metal, an oxidation step of forming an oxide film by oxidizing the first thin film, and a second thin film forming step of forming a second thin film containing a second metal on the oxide film.

Abstract: A polarization conversion element includes a phase reversal element and a polarization plane rotation element including a liquid crystal layer. The liquid crystal layer has a plurality of regions disposed along circumferential direction with the intersection point of the polarization plane rotation element and the optical axis as the center with alignment directions different from each other. When electric voltage in accordance with the wavelength of linear polarization incident on the polarization plane rotation element is applied, each region rotates the polarization plane of the polarization component transmitted by each region, and thereby converts linear polarization to radial polarization. The phase reversal element reverses, among the first and the second annular portions alternately disposed along the radial direction with the optical axis as the center, the phase of light incident on the first annular portion relative to the phase of light incident on the second annular portion.

Abstract: A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere.

Abstract: A semiconductor device manufacturing method includes forming a second conductive layer on an underlying layer which has an insulating layer in which a recess is formed and a first conductive layer exposed on a bottom surface of the recess; forming a third conductive layer on the second conductive layer; supplying, into the third conductive layer, a material solid-soluble in the third conductive layer; and heating the third conductive layer into which the solid-soluble material is supplied.

Abstract: A light modulating device 103 includes: a selective diffraction device (10, 10?) which generates diffracted light beams of a plurality of orders by diffracting illumination light into one of a plurality of directions, the illumination light being linearly polarized light having a polarization plane oriented in a first polarization direction, and which causes a phase difference between the diffracted light beams of the plurality of orders; and a polarization plane rotating device 14 which rotates the polarization plane of the diffracted light beam of each order so as to be oriented in a direction perpendicular to a direction radiating from an optical axis.

Abstract: A touch panel includes first sensor electrode arrays in which first island-shaped electrode portions are arrayed along a first direction and connected through connecting portions, second sensor electrode arrays in which second island-shaped electrode portions are arrayed at intervals along a second direction, jumper wiring portions being superimposed through insulating portions and connecting the second island-shaped electrode portions arranged adjacent to each other along the second direction, and a lead-out wiring portion connected to the first and second sensor electrode arrays, the first and second sensor electrode arrays being formed of a first transparent conductor layer having a first thickness, the jumper wiring portions being formed of a second transparent conductor layer having a second thickness, the lead-out wiring portion being formed of a third transparent conductor layer having a third thickness that is larger than the first thickness.

Abstract: A phase modulation device corrects wave front aberrations generated by an optical system including an objective lens disposed on an optical path of a light flux. The phase modulation device includes a phase modulation element which includes a plurality of electrodes, and modulates the phase of the light flux in accordance with a voltage applied to each electrode, and a control circuit which controls the voltage to be applied to each electrode. The control circuit controls the voltage to be applied to each electrode in such a manner that the light flux is imparted with a phase modulation amount in accordance with a phase modulation profile having a polarity opposite to the polarity of a phase distribution to be determined according to a relational equation representing a relationship between a numerical aperture of the objective lens and a ratio between third-order spherical aberration and fifth-order spherical aberration.

Abstract: A light modulator element includes a liquid crystal element which has a liquid crystal layer containing liquid crystal molecules aligned along a first direction, and two transparent electrodes disposed in opposition to each other with the liquid crystal layer sandwiched therebetween, and which controls the phase of linear polarization light and passing through said liquid crystal layer by applying an electric voltage between said two transparent electrodes; a polarizer plate which is disposed between a light source and said liquid crystal element and which has the transmission axis along the first direction or along a direction orthogonal to said first direction; and a rotation mechanism which supports the liquid crystal element and the polarizer plate and which rotates the liquid crystal element and the polarizer plate integrally in one unit with the optical axis of the liquid crystal element as the rotation axis.

Abstract: An object is to improve a user's convenience. There is provided a control unit for use in a liquid ejecting apparatus using a tank containing a liquid and a storage material attachable to and detachable from the liquid ejecting apparatus, and storing an amount of the liquid in the tank. After the storage material is not mounted on a predetermined place, the control unit receives an answer for a question to ask whether or not the liquid is injected to the tank.

Abstract: An aberration correction optical unit (3) disposed in an optical system includes: a first phase modulation element (3a) and a second phase modulation element (3c) each having a polarization characteristic; and a variable waveplate (3b) disposed between the first and second phase modulation elements so that an optical axis of the variable waveplate has a predetermined angle with respect to optical axes of the two phase modulation elements, in order to correct an aberration generated by the optical system.

Abstract: A manganese-containing film forming method for forming a manganese-containing film on an underlying layer containing silicon and oxygen includes: degassing the underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes: setting a film formation temperature to be higher than a degassing temperature; introducing a reducing reaction gas; and forming a manganese-containing film including an interfacial layer formed in an interface with the underlying layer and a manganese metal film formed on the interfacial layer, the interfacial layer being made up of a film of at least one of a manganese silicate and a manganese oxide.

Abstract: An information processing device includes an ink distribution amount computation unit that computes an i-th (where i is an integer greater than or equal to one) ink distribution amount distributed to an i-th recording job which is performed by a recording apparatus according to an i-th ink distribution ratio obtained from division of an i-th total consumption amount cumulative total by an i-th recording consumption amount cumulative total.

Abstract: A method of fabricating a semiconductor device including a substrate having a copper interconnect exposed on a surface of an insulation film, wherein a layer of an anti-corrosion agent composed of organic material is formed on the surface of the copper interconnect. The method includes removing the layer of the anti-corrosion agent by heating the substrate; and forming a thin layer including manganese oxide on the surface of the copper interconnect by supplying a gas containing an organic compound of manganese to the substrate.

Abstract: A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion.

Abstract: A manganese metal film forming method includes: degassing an underlying layer formed on a processing target by thermally treating the processing target, the underlying layer containing silicon and oxygen; and forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese compound. Forming a manganese metal film includes introducing a gas containing an oxidizing agent to form a partially-oxidized manganese metal film.