Patents by Inventor Kenji Nomura

Kenji Nomura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150325707
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: July 22, 2015
    Publication date: November 12, 2015
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 9130049
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: September 8, 2015
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20150247011
    Abstract: A method for producing a rubber wet master batch contains a coagulating step of mixing a slurry solution containing the filler and the dispersing solvent with the rubber latex solution, and coagulating the mixture, thereby producing a filler-containing rubber coagulation, and a heating step of using a uniaxial extruder to heat the filler-containing rubber coagulation to a temperature of 180 to 200 C, thereby dehydrating, drying and plasticizing the filler-containing rubber coagulation through a single step. The uniaxial extruder is an extruder having a screw, and an outer cylinder having an inner wall surface in which a slit is formed to be extended along the longitudinal direction of the outer cylinder (screw axial direction); and at least one portion of the inner wall surface of the outer cylinder is subjected to blasting treatment.
    Type: Application
    Filed: June 18, 2013
    Publication date: September 3, 2015
    Applicant: TOYO TIRE & RUBBER CO., LTD.
    Inventors: Kenji Nomura, Takashi Miyasaka
  • Patent number: 9090499
    Abstract: A method of etching a glass substrate using an etchant that is reversibly activated to etch only in precise locations in which such etching is desired and is deactivated when outside of these locations. The method involves exposing a first side of the glass substrate to a mixture of chemical substances that includes a neutralized etchant that is photosensitive. The neutralized etchant is formed by reacting a neutralizer with an etchant. The method also includes transmitting light from a direction of a second side of the glass into the mixture of chemical substances. In response to exposure to this light, the etchant is reversibly released from a bond to the neutralizer to form the etchant on predetermined areas of the first side of the glass, wherein the predetermined areas are defined by the dimension of the light.
    Type: Grant
    Filed: March 10, 2013
    Date of Patent: July 28, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: John H. Hong, Kenji Nomura, Je-Hsiung Lan
  • Patent number: 9063064
    Abstract: An X-ray analysis apparatus includes: an X-ray source that emits an X-ray irradiating a specimen; a specimen holding unit that holds the specimen; and an X-ray detecting unit that detects the X-ray diffracted by the specimen; wherein the specimen holding unit includes a second ?-axis rotating stage rotating the specimen about a ?-axis, a first ?-axis rotating stage rotating the entirety of the second ?-axis rotating stage about the ?-axis, the second ?-axis rotating stage being disposed on the first ?-axis rotating stage, a ?-axis rotating stage that rotates the entirety of the first ?-axis rotating stage about a ?-axis, an ?-axis rotating stage that rotates the entirety of the ?-axis rotating stage about an ?-axis, and a 2?-axis rotating stage rotating the X-ray detecting unit about the 2?-axis, wherein the second ?-axis rotating stage unit rotates at a speed higher than that of the first ?-axis rotating stage.
    Type: Grant
    Filed: April 4, 2013
    Date of Patent: June 23, 2015
    Assignee: FUJITSU LIMITED
    Inventor: Kenji Nomura
  • Publication number: 20150011024
    Abstract: An analysis device includes an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample, an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material, an electrode configured to detect an electric current carried by irradiating the sample with the four monochromatic X-rays with different energies, and an electric power source configured to apply a voltage between the electrically conductive sample stage and the electrode, wherein the four monochromatic X-rays with different energies are X-rays included within a range from an absorption edge of a compound semiconductor included in the sample to a higher energy side of 300 eV.
    Type: Application
    Filed: June 2, 2014
    Publication date: January 8, 2015
    Applicant: FUJITSU LIMITED
    Inventor: KENJI NOMURA
  • Publication number: 20140307367
    Abstract: A motor drive device for driving at least one motor is provided, which includes at least one amplifier module for supplying power to the at least one motor, a control circuit board including at least one amplifier connector for releasably connecting with the at least one amplifier module, respectively, and a bus bar for releasably connecting with the amplifier module to supply power to the amplifier module.
    Type: Application
    Filed: April 14, 2014
    Publication date: October 16, 2014
    Applicant: KABUSHIKI KAISHA YASKAWA DENKI
    Inventors: Takashi MAEDA, Yoichi HASHIMOTO, Kenji NOMURA
  • Publication number: 20140251947
    Abstract: A method of etching a glass substrate using an etchant that is reversibly activated to etch only in precise locations in which such etching is desired and is deactivated when outside of these locations. The method involves exposing a first side of the glass substrate to a mixture of chemical substances that includes a neutralized etchant that is photosensitive. The neutralized etchant is formed by reacting a neutralizer with an etchant. The method also includes transmitting light from a direction of a second side of the glass into the mixture of chemical substances. In response to exposure to this light, the etchant is reversibly released from a bond to the neutralizer to form the etchant on predetermined areas of the first side of the glass, wherein the predetermined areas are defined by the dimension of the light.
    Type: Application
    Filed: March 10, 2013
    Publication date: September 11, 2014
    Applicant: QUALCOMM INCORPORATED
    Inventors: John H. HONG, Kenji NOMURA, Je-Hsiung LAN
  • Patent number: 8652854
    Abstract: There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: February 18, 2014
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Tomohiro Takamatsu, Junichi Watanabe, Ko Nakamura, Wensheng Wang, Naoyuki Sato, Aki Dote, Kenji Nomura, Yoshimasa Horii, Masaki Kurasawa, Kazuaki Takai
  • Publication number: 20130336454
    Abstract: An X-ray analysis apparatus includes: an X-ray source that emits an X-ray irradiating a specimen; a specimen holding unit that holds the specimen; and an X-ray detecting unit that detects the X-ray diffracted by the specimen; wherein the specimen holding unit includes a second ?-axis rotating stage rotating the specimen about a ?-axis, a first ?-axis rotating stage rotating the entirety of the second ?-axis rotating stage about the ?-axis, the second ?-axis rotating stage being disposed on the first ?-axis rotating stage, a ?-axis rotating stage that rotates the entirety of the first ?-axis rotating stage about a ?-axis, an ?-axis rotating stage that rotates the entirety of the ?-axis rotating stage about an ?-axis, and a 2?-axis rotating stage rotating the X-ray detecting unit about the 2?-axis, wherein the second ?-axis rotating stage unit rotates at a speed higher than that of the first ?-axis rotating stage.
    Type: Application
    Filed: April 4, 2013
    Publication date: December 19, 2013
    Applicant: FUJITSU LIMITED
    Inventor: Kenji NOMURA
  • Publication number: 20130277672
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: June 20, 2013
    Publication date: October 24, 2013
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 8237166
    Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: August 7, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Publication number: 20120171785
    Abstract: There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
    Type: Application
    Filed: March 12, 2012
    Publication date: July 5, 2012
    Applicant: FUJITSU SEMICONDUCTOR LIMITED
    Inventors: Tomohiro Takamatsu, Junichi Watanabe, Ko Nakamura, Wensheng Wang, Naoyuki Sato, Aki Dote, Kenji Nomura, Yoshimasa Horii, Masaki Kurasawa, Kazuaki Takai
  • Patent number: 8212252
    Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: July 3, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Tohru Den, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8203146
    Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: June 19, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Katsumi Abe, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8168974
    Abstract: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10?18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.
    Type: Grant
    Filed: September 15, 2010
    Date of Patent: May 1, 2012
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 8153448
    Abstract: There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
    Type: Grant
    Filed: May 12, 2009
    Date of Patent: April 10, 2012
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Tomohiro Takamatsu, Junichi Watanabe, Ko Nakamura, Wensheng Wang, Naoyuki Sato, Aki Dote, Kenji Nomura, Yoshimasa Horii, Masaki Kurasawa, Kazuaki Takai
  • Patent number: 8125139
    Abstract: Provided is a phosphor material for a white LED with a blue LED or ultraviolet LED as a light source. A phosphor comprises an ?-sialon represented by the formula: (M1)X(M2)Y(Si)12?(m+n)(Al)m+n(O)n(N)16?n where M1 is at least one element selected from the group consisting of Li, Mg, Ca, Y and lanthanide metals (except for La and Ce), M2 is at least one element selected from Ce, Pr, Eu, Tb, Yb and Er, 0.3?X+Y?1.5, 0<Y?0.7, 0.6?m?3.0, 0?n?1.5 and X+Y=m/2; and the oxygen content in a powder of the ?-sialon is at most 0.4 mass % larger than a value calculated based on the formula.
    Type: Grant
    Filed: February 28, 2006
    Date of Patent: February 28, 2012
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Hideyuki Emoto, Masahiro Ibukiyama, Kenji Nomura
  • Publication number: 20120012838
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 19, 2012
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Patent number: 8084743
    Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: December 27, 2011
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology
    Inventors: Keishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura