Abstract: There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: An image reading device, which includes: an original document reading section that emits light to an original document and in the vicinity of the original document, receives reflected light and outputs image signals; an original document positioning guide that has at least a first color and a second color on a side receiving the light emitted from the original document reading section, and is used for settling a position of the original document; a detection section that monitors a first image signal in a scanning direction from the first color to the original document and a second image signal in a scanning direction from the second color to the original document, and detects a position for extracting image signals corresponding to the light reflected on the original document on the basis of a change occurring in either of the first image signal or the second image signal.

Abstract: Provided is a phosphor material for a white LED with a blue LED or ultraviolet LED as a light source. A phosphor comprises an ?-sialon represented by the formula: (M1)X(M2)Y(Si)12?(m+n)(Al)m+n(O)n(N)16?n where M1 is at least one element selected from the group consisting of Li, Mg, Ca, Y and lanthanide metals (except for La and Ce), M2 is at least one element selected from Ce, Pr, Eu, Tb, Yb and Er, 0.3?X+Y?1.5, 0<Y?0.7, 0.6?m?3.0, 0?n?1.5 and X+Y=m/2; and the oxygen content in a powder of the ?-sialon is at most 0.4 mass % larger than a value calculated based on the formula.

Abstract: After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and further steps up to bury a W plug (24), an Ir film (25a), an IrOy film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (25a), the IrOy film (25b), the PZT film (26) and the IrOx film (27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir diffused into the PZT film (26) concentrates at an interface between the IrOx film (27) and the PZT film (26) and at grain boundaries in the PZT film (26), and the Ir concentrations at the interface and boundaries are higher than those in the grains.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: A capacitive element which includes: a silicon substrate (base material) 1; a base insulating film 2 formed on the silicon substrate 1; and a capacitor Q constituted by forming a bottom electrode 4a, a capacitor dielectric film 5a and a top electrode 6a on the base insulating film 2. The capacitive element is characterized in that the capacitor dielectric film 5a is composed of a material with the formula (Ba1?y,Sry)mYpTiQO3+?, where 0<p/(p+m+Q)?0.015, ?0.5<?<0.5.

Abstract: Additional elements of Ca, Sr, and Ir are added to a single layer lead lanthanum zirconate titanate (PLZT), thereby decreasing a c/a ratio to within a range from 1.00 to 1.008 smaller than a general c/a of a range from about 1.01 to 1.03 generally used in a lead lanthanum zirconate titanate (PLZT) crystal having a crystal structure of a tetragonal system. With this arrangement, a large switching charge Qsw can be obtained without thinning the PLZT layer even when the operation voltage is 3.0 V or less.

Abstract: To provide a thin-film capacitor and a semiconductor device capable of preventing a reduction in the dielectric constant due to a residual tensile stress in a ferroelectric layer in a thin-film capacitor using the ferroelectric substance, and increasing the dielectric constant and increasing an electric capacity. In a thin-film capacitor 10 having a lower electrode 2, a ferroelectric layer 3, and an upper electrode 4 on a substrate 1, the thin-film capacitor 10 has the upper electrode 4 that adds a compressive stress to the ferroelectric layer 3, and a residual compressive stress in the upper electrode 4 is within a range from 108 to 6×1011 dyne/cm2.

Abstract: Additional elements of Ca, Sr, and Ir are added to a single layer lead lanthanum zirconate titanate (PLZT), thereby decreasing a c/a ratio to within a range from 1.00 to 1.008 smaller than a general c/a of a range from about 1.01 to 1.03 generally used in a lead lanthanum zirconate titanate (PLZT) crystal having a crystal structure of a tetragonal system. With this arrangement, a large switching charge Qsw can be obtained without thinning the PLZT layer even when the operation voltage is 3.0 V or less.

Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Abstract: A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10?18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

Abstract: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.