Abstract: A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.

Abstract: A steering wheel includes: a cylindrical slider which is disposed on an outer side of a support member so as to slide in a front-to-rear direction and which is biased to the rear; a cap member which covers at least respective rear end portions of the support member and the slider from the rear; a movable-side contact portion which is provided inside the cap member; an annular damper holder which is mounted inside the cap member; an annular elastic member which is interposed between the slider and the damper holder; a transmitting portion which is provided in an inner circumferential portion of the damper holder; and a movement catch portion which is provided on an outer circumferential portion of the slider so as to be positioned immediately before the transmitting portion and to which a forward movement of the damper holder is transmitted through the transmitting portion.

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

Abstract: Disconnection of a base line is suppressed even when a short-side direction of a collector layer is parallel to crystal orientation [011]. A bipolar transistor includes: a collector layer that has a long-side direction and a short-side direction in a plan view, in which the short-side direction is parallel to crystal orientation [011], a cross-section perpendicular to the short-side direction has an inverted mesa shape, and a cross-section perpendicular to the long-side direction has a forward mesa shape; a base layer that is formed on the collector layer; a base electrode that is formed on the base layer; and a base line that is connected to the base electrode and that is drawn out from an end in the short-side direction of the collector layer to the outside of the collector layer in a plan view.

Abstract: In a rotating body (32) of a rotor (30), a plurality of permanent magnets (45) are arranged in a circumferential direction, alternating with a plurality of divided cores (33). The plurality of permanent magnets (45) is in surface contact with side surfaces of the divided cores (33) in the circumferential direction in a state where facing magnetic pole faces of two permanent magnets (45) arranged on both sides of each divided core (33) in the circumferential direction are homopolar. In a resin covering portion (50) of the rotating body (32), a first part (51) and a second part (52) cover end surfaces of the plurality of permanent magnets (45), a plurality of third parts (53) covers outer peripheral surfaces of the plurality of permanent magnets (45), and a fourth part (54) covers inner peripheral surfaces of the plurality of divided cores (33) and inner peripheral surfaces of the plurality of permanent magnets (45).

Abstract: A single drive type optical modulator has good high-frequency characteristics and reduced wavelength chirp of the modulated light. An optical modulator is provided with a Mach-Zehnder optical waveguide including first and second optical waveguides, a buffer layer covering the first and second optical waveguides, and an electrode layer including first and second ground electrodes and a signal electrode positioned between the first and second ground electrodes in a plan view. The signal electrode has a first lower surface covering the first optical waveguide through the buffer layer, the first ground electrode has a first lower surface covering the second optical waveguide through the buffer layer and a second lower surface positioned above the first lower surface, and a gap between the signal electrode and the second ground electrode that is larger than a gap between the signal electrode and the first ground electrode.

Abstract: In a power generation cell, first bypass stop protrusions for preventing bypassing of an oxygen-containing gas are provided between an end of an oxygen-containing gas flow field in a flow field width direction and an outer peripheral bead. An end wavy ridge includes curves recessed away from the outer peripheral bead. The first bypass stop protrusions are provided between the recessed curves and the outer peripheral bead. A first metal separator has first support protrusions for supporting a cathode, between the recessed curves and the first bypass stop protrusions.

Abstract: Provided is a biofilm formation inhibitor causing no damage to pipes and instruments and being safe to humans. A biofilm formation inhibitor comprises at least one quinone compound selected from the group consisting of a hydroquinone substituted by a hydroxyl group or an alkyl group, a p-benzoquinone substituted by a hydroxyl group or an alkyl group and a C1 to C5 alkyl resorcinol, as an active ingredient. A biofilm formation inhibition composition comprises a quinone-based compound and a chelating agent. A method for inhibiting biofilm formation comprising adding a quinone-based compound and a chelating agent in an aqueous liquid. A biofilm formation inhibition composition comprises a quinone-based compound and an organic solvent. A method for inhibiting biofilm formation comprises adding the biofilm formation inhibition composition in an aqueous liquid.

Abstract: A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit transistors. The bump is electrically connected to emitters of the plurality of unit transistors. The plurality of unit transistors are arranged in a first direction. The bump is disposed above the emitters of the plurality of unit transistors while extending in the first direction. The emitter of at least one of the plurality of unit transistors is displaced from a center line of the bump in the first direction toward a first side of a second direction which is perpendicular to the first direction. The emitter of at least another one of the plurality of unit transistors is displaced from the center line of the bump in the first direction toward a second side of the second direction.

Abstract: Fluidic assembly methods are presented for the fabrication of emissive displays. An emissive substrate is provided with a top surface, and a first plurality of wells formed in the top surface. Each well has a bottom surface with a first electrical interface. Also provided is a liquid suspension of emissive elements. The suspension is flowed across the emissive substrate and the emissive elements are captured in the wells. As a result of annealing the emissive substrate, electrical connections are made between each emissive element to the first electrical interface of a corresponding well. A eutectic solder interface metal on either the substrate or the emissive element is desirable as well as the use of a fluxing agent prior to thermal anneal. The emissive element may be a surface mount light emitting diode (SMLED) with two electrical contacts on its top surface (adjacent to the bottom surfaces of the wells).

Abstract: Fluidic assembly methods are presented for the fabrication of emissive displays. An emissive substrate is provided with a top surface, and a first plurality of wells formed in the top surface. Each well has a bottom surface with a first electrical interface. Also provided is a liquid suspension of emissive elements. The suspension is flowed across the emissive substrate and the emissive elements are captured in the wells. As a result of annealing the emissive substrate, electrical connections are made between each emissive element to the first electrical interface of a corresponding well. A eutectic solder interface metal on either the substrate or the emissive element is desirable as well as the use of a fluxing agent prior to thermal anneal. The emissive element may be a surface mount light emitting diode (SMLED) with two electrical contacts on its top surface (adjacent to the bottom surfaces of the wells).

Abstract: A semiconductor device includes a semiconductor substrate having a principal surface which has a first side in a first direction and a second side in a second direction. A plurality of transistor arrays is formed in a region adjacent to the first side of the semiconductor substrate. A plurality of bumps include first and second bumps which are longer in the first direction. The distance between the first side and the first bump is shorter than the distance between the first side and the second bump. The plurality of transistor arrays include a first and a second transistor arrays. The first transistor array has a plurality of first unit transistors arranged along the first direction such that the first unit transistors overlap the first bump. The second transistor array has a plurality of second unit transistors arranged along the first direction such that the second unit transistors overlap the second bump.

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuit is connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.

Abstract: Provided are a control server and a control system both capable of preventing traffic accidents more effectively. The control server is configured to control multiple traffic signals installed on a road, and includes: a pressure information obtainer configured to obtain pressure information which is outputted from a pressure sensor installed at a stop position on the road corresponding to each of the multiple traffic signals, and which includes a value representing pressure received from a vehicle running on the road; an abrupt braking information obtainer configured to, based on the pressure information, obtain abrupt braking information on an abrupt braking operation performed by the vehicle running on the road; and a traffic signal controller configured to, based on the abrupt braking information, generate a control signal for controlling the multiple traffic signals.

Abstract: Fluid-suspended microcomponent management systems and methods are provided. The method provides a first reservoir containing a first solution and a magnetic collection head. A plurality of magnetically polarized microcomponents is suspended in the first solution, where each microcomponent has a maximum cross-section of 150 micrometers (?m) and a maximum mass of 1 microgram. A magnetic field is induced in the collection head and the microcomponents are exposed to the magnetic field. A plurality of microcomponents becomes fixed in position on a collection surface in response to the magnetic field. In one aspect, the step of exposing the microcomponents to the magnetic field includes immersing the collection head in the first reservoir. As a result, the plurality of microcomponents is collected on a surface of the collection head. Alternatively, the step of fixing the plurality of microcomponents in position includes fixing the microcomponents in position on the collection surface sidewall.

Abstract: A method is provided for fabricating an emissive display substrate with a light management system. The method provides a transparent first substrate with a top surface and forms a plurality of emissive element wells. The well sidewalls are formed from a light absorbing material or a light reflector material. In one aspect, a light blocking material film layer is formed overlying the first substrate top surface, and the emissive element sidewalls are formed in the light blocking material film layer. In another aspect, a transparent second substrate is formed overlying the first substrate top surface. Then, the emissive element wells are formed in the second substrate with via surfaces, and the light blocking material is deposited overlying the well via surfaces. Additionally, the light blocking material may be formed on the bottom surface of each well. An emissive display substrate with light management system is provided below.

Abstract: Disconnection of a base line is suppressed even when a short-side direction of a collector layer is parallel to crystal orientation [011]. A bipolar transistor includes: a collector layer that has a long-side direction and a short-side direction in a plan view, in which the short-side direction is parallel to crystal orientation [011], a cross-section perpendicular to the short-side direction has an inverted mesa shape, and a cross-section perpendicular to the long-side direction has a forward mesa shape; a base layer that is formed on the collector layer; a base electrode that is formed on the base layer; and a base line that is connected to the base electrode and that is drawn out from an end in the short-side direction of the collector layer to the outside of the collector layer in a plan view.

Abstract: Disclosed herein is an optical waveguide element that includes a substrate and a waveguide layer formed on the substrate and comprising lithium niobate. The waveguide layer has a slab part having a predetermined thickness and a ridge part protruding from the slab part. The maximum thickness of the slab part is 0.05 times or more and less than 0.4 times a wavelength of a light propagating in the ridge part.

Abstract: A rolling bearing has an inner ring attached to a rotating shaft out of contact with a first end surface, and an outer ring is fitted onto an inner peripheral surface of a housing in contact with the first end surface. A sliding element is provided between a second end surface and the first end surface. A retaining portion is provided between the sliding element and the first end surface. A biasing portion is provided between the retaining portion and the first end surface to bias the retaining portion toward a second side in a lamination direction. The rotating shaft, the housing, the inner ring, the outer ring, a rolling element, the sliding element, the retaining portion, and the biasing portion are formed of a conductive material. The rotating shaft and the housing are electrically connected by the sliding element, the retaining portion, and the biasing portion.

Abstract: On a single-crystal semiconductor substrate with an upper surface including a first direction in which an inverted mesa step extends and a second direction in which a forward mesa step extends in response to anisotropic etching in which an etching rate depends on crystal plane orientation, a bipolar transistor including a collector layer, a base layer, and an emitter layer that are epitaxially grown, and a base wire connected to the base layer are arranged. A step is provided at an edge of the base layer, and the base wire is extended from inside to outside of the base layer in a direction intersecting the first direction in a plan view. An intersection of the edge of the base layer and the base wire has a disconnection prevention structure that makes it difficult for step-caused disconnection of the base wire to occur.