Abstract: In order to provide a line light irradiation device that can improve efficiency of condensing light with a compact size and that is almost free from unevenness of lighting, the line light irradiation device of the present claimed invention comprises multiple light emitting parts 2 each of which is provided with a light irradiating part 21 where multiple optical fibers 4 are thickly arranged in a line with light leading out end portions 4a of the multiple optical fibers 4 forming a straight line and a columnar lens 22 arranged to extend along a direction of the line P in front of the light irradiating part 21 in pairs, and that irradiate line light LL that converges into a straight line, and a holding body 3 that is arranged to face to a work W as being an object on which the line light LL is to be irradiated, on which monitoring bores 3a, 3b are arranged to penetrate in order to monitor the work W, and that holds the light emitting parts 2 so that each optical axis face of the line light LL irradiated from ea

Abstract: An elevator group control system includes a reference route generating portion, which for each elevator, generates a reference route which the elevator should follow with respect to the time axis and position axis; and an assignment portion which selects an elevator for assignment to a generated hall call so as to make the actual trajectory of each elevator closer to its reference route. Reference routes which guide the cage's trajectory into temporally equal interval condition are generated, and car assignment is executed to allow the cages to settle in temporally equal interval condition over a long period of time.

Abstract: The light irradiation device of this invention intends to further facilitate an assembling procedure and to stabilize the quality as a product.

Abstract: An LED that can effectively prevent heat accumulation while preventing short-circuiting, discharge, fire and the like, even in the case where LEDs are relatively densely placed, is provided. In a can type LED 3 where an anode A, a cathode K and an LED pedestal 31p are provided within a housing 31, and pins a1 and k1 of anode A and cathode K lead out at least to the outside of housing 31 so that a voltage can be applied between anode A and cathode K via these pins a1 and k1, a condition of isolation is maintained between pin a1 of anode A and housing 31, as well as between pin k1 of cathode K and housing 31, and pin r1 which is thermally connected to LED pedestal 31p is provided outside of housing 31.

Abstract: An impurity-activating thermal process is performed after a target is subjected to an impurity introduction step. In this thermal process, while a spike RTA process including a holding period for holding a temperature at a predetermined temperature is performed, at least one iteration of millisecond annealing at a temperature higher than the predetermined temperature is performed during the holding period of the spike RTA process.

Abstract: A thermal cycle includes: increasing a temperature from an initial temperature to a temperature T1 at an arbitrary rate R1 (° C./sec); holding the temperature at the temperature T1 for an arbitrary period t1 (sec); increasing the temperature from the temperature T1 to a temperature T2 at a rate R2 (° C./sec) of 1.0×107 (° C./sec) or less; and holding the temperature at the temperature T2 for a period t2 (sec) of 50 msec or less. The thermal cycle thereafter includes: decreasing the temperature from the temperature T2 to the temperature T1 at a rate R1? (° C./sec) of 1.0×107 (° C./sec) or less; holding the temperature T1 for an arbitrary period t3 (sec); and decreasing the temperature from the temperature T1 to a final temperature at an arbitrary rate R2? (° C./sec). Such a thermal cycle is successively repeated in a plurality of iterations.

Abstract: A method and a display for elevator allocation evaluating are provided. When an elevator allocated to a hall call is selected by employing two different view points such as a real and a future call evaluation index, an elevator allocation reason and a balance between the two view points can be easily grasped. An elevator allocated to a hall call is evaluated on orthogonal coordinates in which the real call evaluation index and the future call evaluation index are defined as an X and a Y coordinate axis. Evaluation indexes of first to fourth elevator cars are evaluated by employing contour lines of a synthetic evaluation function, which is represented as the real and the future call evaluation index. A weight for allocating is displayed visually.

Abstract: In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure time to an oxidizing agent to time required for a composition of a metal oxide film to reach 97% or more of a stoichiometric value.

Abstract: A lighting device is provided that surface-emits the light evenly with less number of luminous bodies by comprising a transparent body 2 for light diffusion in a shape of a body of rotation having a center bore 11 and provided with a luminous surface 2c and a light introducing surface 2b, and multiple luminous bodies 3 that introduce the light into the light introducing surface 2c of the transparent body 2 and make the luminous surface 2c of the transparent body 2 surface-emit the light, wherein the light introducing surface 2b is arranged on an inner peripheral section forming the center bore 11 of the transparent body 2, a reflecting layer 41 is arranged to reflect the light on a surface other than the light introducing surface 2b and the luminous surface 2c of the transparent body 2, and the light from the luminous bodies 3 is emitted toward an outer surrounding surface 2e of the transparent body 2.

Abstract: The light irradiation device of this invention intends to further facilitate an assembling procedure and to stabilize the quality as a product.

Abstract: An elevator group control system includes a reference route generating portion, which for each elevator, generates a reference route which the elevator should follow with respect to the time axis and position axis; and an assignment portion which selects an elevator for assignment to a generated hall call so as to make the actual trajectory of each elevator closer to its reference route. Reference routes which guide the cage's trajectory into temporally equal interval condition are generated, and car assignment is executed to allow the cages to settle in temporally equal interval condition over a long period of time.

Abstract: A semiconductor device includes an N-type MOS transistor and a P-type MOS transistor. The N-type MOS transistor has a first gate insulating film and a first gate electrode. The P-type MOS transistor has a second gate insulating film and a second gate electrode. The first gate insulating film and the second gate insulating film are made of silicon oxynitride, and the first gate insulating film and the second gate insulating film are different from each other in nitrogen concentration profile.

Abstract: An elevator group control system is provided which stably keeps cage's position in temporally equal interval condition over a long period of time. The present invention provides a system comprising: reference route generating means, which for each elevator, generates a reference route which the elevator should follow with respect to the time axis and position axis; and assignment means which selects an elevator for assignment to a generated hall call so as to make the actual trajectory of each elevator closer to its reference route. Since reference routes which guides the cage's trajectory into temporally equal interval condition are generated and car assignment is executed so as to make the respective cages follow their reference routes, it is possible to allow the cages to settle in temporally equal interval condition over a long period of time.

Abstract: A control device for controlling a continuously variable transmission (5) is disclosed. The control device has an oil pressure control unit (100) which supplies an oil pressure to a primary pulley (10) and secondary pulley (11) based on a command signal indicative of a target speed-reduction ratio, a sensor (26) which detects a rotation speed (Np1) of the primary pulley (26), and a controller (20) which transmits the command signal indicative of the target speed-reduction ratio to the oil pressure control unit (100).

Abstract: A semiconductor manufacturing apparatus includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-? directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.

Abstract: The rear projection screen includes a laminated sheet having a multi-layered structure consisting of the n number (n is a natural number of three or above) of layers. In this laminated sheet, a difference in linear expansion coefficients is 5% or more between a layer having the maximum linear expansion coefficient and a layer having the minimum linear expansion coefficient. Further, a difference in elasticity is 10% or more between a layer having the maximum elasticity and a layer having the minimum elasticity. The curvature change rate ? (1/mm° C.) of the laminated sheet with respect to temperature satisfies ?7.0×10?6???7.0×10?6.

Abstract: The capacitor of the present invention comprises: an opening part formed in an interlayer insulating film on a semiconductor substrate; a lower electrode made of a polycrystalline silicon with an uneven surface part; a chemical oxide film formed on the uneven surface part of the lower electrode; an silicon oxynitride film which is obtained by modifying the chemical oxide film by nitriding processing; a capacitive insulating film made of a metal oxide film formed on the silicon oxynitride film; and an upper electrode formed on the capacitive insulating film.

Abstract: In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M?1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N?1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

Abstract: A capacitor insulating film composed of a layered film of first- to third-layer hafnium oxide films is formed on a lower electrode of a capacitor. The first- and third-layer hafnium oxide films have a composition ratio of oxygen to hafnium higher than the second-layer hafnium oxide film. Thus, the capacitor insulating film is composed of the first- and third-layer hafnium oxide films having greater barrier height and the second-layer hafnium oxide film having a higher dielectric constant, thereby attaining a capacitor having less leakage current and large capacity.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region.