Abstract: On the light radiation device X6A side, a box structure is provided in which a lens is held one by one proximate to or close to the light emission end of each optical fiber. On the light source device side, a common casing houses a first light source lens that generally collimates the radiation light beams radiated from an LED and a second light source lens that condenses the light beams from the first light source lens and introduces the condensed light beams to the light introduction end of the optical fiber bundle. Thus, the current demands of tests on a piece of work can be fully satisfied in view of the light condensing area and the light condensing efficiency while making the best of the characteristics of the illumination system in which the light radiation device and the light source device are separated with an intervention of the optical fibers.

Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.

Abstract: Part of a first oxide film formed by thermal oxidation is removed by etching. A second oxide film is formed in the part of substrate from which the first oxide film has been removed using heated nitric acid. The two oxide films are nitrided by a nitrogen plasma having a low energy so as to be first and second gate insulating films, i.e., oxynitride films, respectively.

Abstract: A cost effective and small illuminating apparatus for testing includes an illuminant having a predetermined illumination angle, a first lens for converging light from the illuminant and converting the light into collimated light, and a second lens for converging light which has passed through through-holes formed in a tested target after having been emitted from the first lens as the collimated light and for making an imager take in the light.

Abstract: In order to sample microorganisms in a first isolator 1 before, during, and after the operation of a filling system 4, first and second robots 6 and 7 that are provided in the first isolator 1 carry a sampling apparatus 5 to first and second sampling positions A and B to sample naturally dropping microorganisms, carry the sampling apparatus 5 to a third sampling position C to sample microorganisms floating around a filling nozzle 17b, and sample microorganisms adhering to the surfaces of the predetermined filling nozzle 17b and a cap feeder 18b at fourth and fifth sampling positions D and E, respectively.

Abstract: A small or size-reduced lighting apparatus for an inspection is disclosed. The lighting apparatus for an inspection comprises a lighting portion 3 having a large number of light emitters 2 provided circularly, and a guide member 5 including a large number of reflecting portions 6 for reflecting a part of lights emitted from the light emitters 2 and guiding the same light to an inspection object provided in a lower position, wherein the light for inspection which has been applied on and reflected by the inspection object can be fetched through the apertures among the reflecting portions.

Abstract: A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.

Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.

Abstract: A plant cultivation method, wherein plants are cultivated by using means for irradiating pulsed light with a period of 2 &mgr;sec to 1 msec and a duty ratio (DT ratio) of 20 to 70%, using a light emitting diode that emits white light or two types of light of white and red as the light source, and a plant cultivation illuminator used therein.

Abstract: An improved optical fiber holder is provided, including: a tubular member (3) for fitting over an optical fiber bundle (1) consisting of a bundle of plural optical fibers (11) to prevent the optical fibers (11) from separating from each other; and a pressing structure (5) for exerting a pressing force on the optical fiber bundle (1) in a direction perpendicular to a longitudinal direction of the optical fiber bundle (1) to press the optical fiber bundle (1) against an inner periphery (3a) of the tubular member (3).

Abstract: An electric power supply system is provided to recognize a type or a desired operating condition of a connected LED lighting unit automatically and to supply electric power corresponding to the type or the operating condition.

Abstract: An object of the present invention is to provide plant cultivator for research purposes for finding the optimum cultivation environment for plants, using LEDs as light source and a control system therefor. An illumination window 6 is provided in top face 5a of a cabinet body 2 surrounded by thermally insulating walls. In addition, an LED illumination element 16 is arranged in this illumination window 6 and in the vicinity of LED illumination element 16, there is provided LED control means that controls the LED illumination element 16. In addition, in cabinet body 2, there are provided at least some of a growth detection sensor that detects the state of growth of the plants, cultivation environment monitoring means that monitors the cultivation environment of the plants and cultivation environment generating means that generates the cultivation environment; and cultivation environment control means is provided that controls the cultivation environment generating means.

Abstract: A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.

Abstract: An improved illuminating unit for illuminating a target portion of an object to be illuminated is provided, including: a fiber holding portion having a fiber insert hole holding a light-emitting end portion of an optical fiber; and a lens holding portion located downstream of the fiber holding portion in a light traveling direction, light emitted from a light-emitting end of the optical fiber being directed to the target portion through a lens held by the lens holding portion, wherein: the fiber insert hole comprises an equal-diameter portion having a diameter substantially equal to a diameter of the optical fiber, and a larger-diameter portion having a larger diameter than the equal-diameter portion and opening at one end face of the fiber holding portion, the fiber insert hole holding the optical fiber extending through the equal-diameter portion; and the lens is abutted against the one end face of the fiber holding portion or a forward end face of a fusion-deformed portion of the optical fiber, the fusion-

Abstract: In the step of thermally processing a semiconductor substrate by irradiating the semiconductor substrate with lamp light, a free carrier absorption layer for absorbing the irradiated lamp light is provided in advance in the semiconductor substrate. Thus, it is possible to increase the temperature controllability in a low temperature range during an RTP process, and to reduce, at a low cost, variations in the substrate temperature not only in a low temperature range but also in a processing temperature range. As a result, semiconductor devices that require precise thermal processing can be fabricated without degrading the characteristics of the resulting semiconductor devices.

Abstract: A light irradiating unit comprises an LED 5 and a housing 2 into which the LED 5 is incorporated and that has a heat dissipating portion wherein the housing 2 has a first housing element 21 and a second housing element 22 each of which is joined serially along a predetermined axial line, and further comprises a pressing arrangement 3 that fixes the LED 5 with pressure between a first pressing face 3b arranged at the first housing element 21 side and a second pressing face 3a arranged at the second housing element 22 side accompanied by joining the first and the second housing elements 21, 22 and a positioning arrangement 4 that positions the LED 5 so as to align an optical axis of the LED 5 with the predetermined axial line accompanied by joining the first and the second housing elements 21, 22.

Abstract: A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.

Abstract: An efficient lighting unit with improvements in ease of moving its head, reliability and the like is provided. The lighting unit includes: heads 6A and 6B defining illuminating apertures 6Aa and 6Ba, respectively, for directing light to an object W to be illuminated, the heads 6A and 6B being supported by a movable support member 1; LED light source devices 5A and 5B mounted at the movable support member 1 for emitting light when supplied with electric power from an electric power source 3 disposed separately from the movable support member 1 through an electric cable 4; and flexible optical fibers 7A and 7B for guiding light from the LED light source devices 5A and 5B to the respective illuminating apertures 6Aa and 6Ba of the heads 6A and 6B.