Patents by Inventor Kenji Yoneda

Kenji Yoneda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070158671
    Abstract: An LED that can effectively prevent heat accumulation while preventing short-circuiting, discharge, fire and the like, even in the case where LEDs are relatively densely placed, is provided. In a can type LED 3 where an anode A, a cathode K and an LED pedestal 31p are provided within a housing 31, and pins a1 and k1 of anode A and cathode K lead out at least to the outside of housing 31 so that a voltage can be applied between anode A and cathode K via these pins a1 and k1, a condition of isolation is maintained between pin a1 of anode A and housing 31, as well as between pin k1 of cathode K and housing 31, and pin r1 which is thermally connected to LED pedestal 31p is provided outside of housing 31.
    Type: Application
    Filed: December 22, 2004
    Publication date: July 12, 2007
    Applicant: CCS INC.
    Inventors: Kenji Yoneda, Shigeki Masumura, Hideaki Kashihara
  • Publication number: 20070133211
    Abstract: A light emitting diode unit comprises a light emitting element D1, a base 1 having a heat dissipating member 12 that dissipates heat generated by the light emitting element D1, and a first lens 2 comprising a reflecting element 214 that reflects light R2 traveling outside of a predetermined angle among the emitted light R emitted by the light emitting element D1 and a refracting element F that refracts light R1 traveling inside of the predetermined angle among the emitted light R each of which is formed integrally, with the first lens 2 mounted integrally on the base 1, and the emitted light R emitted from the light emitting element D1 is made to travel generally toward the same direction by the reflecting element 214 and the refracting element F.
    Type: Application
    Filed: February 9, 2007
    Publication date: June 14, 2007
    Inventors: Kenji Yoneda, Takahiro Amano, Yasuhiko Inagaki
  • Patent number: 7213945
    Abstract: A light emitting diode unit comprises a light emitting element D1, a base 1 having a heat dissipating member 12 that dissipates heat generated by the light emitting element D1, and a first lens 2 comprising a reflecting element 214 that reflects light R2 traveling outside of a predetermined angle among the emitted light R emitted by the light emitting element D1 and a refracting element F that refracts light R1 traveling inside of the predetermined angle among the emitted light R, each of which is formed integrally, with the first lens 2 mounted integrally on the base 1, and the emitted light R emitted from the light emitting element D1 is made to travel generally toward the same direction by the reflecting element 214 and the refracting element F.
    Type: Grant
    Filed: May 16, 2003
    Date of Patent: May 8, 2007
    Assignee: CCS, Inc.
    Inventors: Kenji Yoneda, Takahiro Amano, Yasuhiko Inagaki
  • Publication number: 20070063273
    Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.
    Type: Application
    Filed: November 16, 2006
    Publication date: March 22, 2007
    Inventor: Kenji Yoneda
  • Patent number: 7164178
    Abstract: A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.
    Type: Grant
    Filed: June 22, 2004
    Date of Patent: January 16, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kenji Yoneda
  • Patent number: 7147977
    Abstract: A wafer is held on a pin chuck, and thereafter a design pattern is transferred to the principal surface of the wafer by exposing an exposure light, which passes through a mask having the design pattern, onto the principal surface of the held wafer. The underlying surface of the wafer has irregularities with cross-sectional cycle lengths of 300 ?m or more and depressions with opening diameters of 100 ?m or less, and is formed such that an arithmetic mean of depths of the irregularities and depths of the depressions is 200 nm or less. The differences in distance between a focal position of the exposure light and the principal surface of the wafer held on the pin chuck are set at 50% or less of a design rule.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: December 12, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kenji Yoneda
  • Patent number: 7144829
    Abstract: A first thermal treatment, which is performed at a temperature within 650–750° C. for 30–240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900–1100° C. for 30–120 minutes, are performed as the initial thermal treatments on a semiconductor wafer composed of silicon. Further, before forming a gate insulating film, the temperature is increased to 1000° C. at a temperature increasing rate of 8° C./min in a nitrogen ambient, and a thermal treatment is performed at a temperature of 1000° C. for 30 minutes as a third thermal treatment.
    Type: Grant
    Filed: April 13, 2004
    Date of Patent: December 5, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kenji Yoneda
  • Publication number: 20060267074
    Abstract: Part of a first oxide film formed by thermal oxidation is removed by etching. A second oxide film is formed in the part of substrate from which the first oxide film has been removed using heated nitric acid. The two oxide films are nitrided by a nitrogen plasma having a low energy so as to be first and second gate insulating films, i.e., oxynitride films, respectively.
    Type: Application
    Filed: August 4, 2006
    Publication date: November 30, 2006
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kenji Yoneda
  • Publication number: 20060261422
    Abstract: A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.
    Type: Application
    Filed: July 13, 2006
    Publication date: November 23, 2006
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroki Sakamoto, Yasuhiro Kawasaki, Kenji Yoneda
  • Publication number: 20060264068
    Abstract: A first thermal treatment, which is performed at a temperature within 650-750° C. for 30-240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900-1100° C. for 30-120 minutes, are performed as the initial thermal treatments on a semiconductor wafer composed of silicon. Further, before forming a gate insulating film, the temperature is increased to 1000° C. at a temperature increasing rate of 8° C./min in a nitrogen ambient, and a thermal treatment is performed at a temperature of 1000° C. for 30 minutes as a third thermal treatment.
    Type: Application
    Filed: July 28, 2006
    Publication date: November 23, 2006
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kenji Yoneda
  • Publication number: 20060249335
    Abstract: A method and a display for elevator allocation evaluating are provided. When an elevator allocated to a hall call is selected by employing two different view points such as a real and a future call evaluation index, an elevator allocation reason and a balance between the two view points can be easily grasped. An elevator allocated to a hall call is evaluated on orthogonal coordinates in which the real call evaluation index and the future call evaluation index are defined as an X and a Y coordinate axis. Evaluation indexes of first to fourth elevator cars are evaluated by employing contour lines of a synthetic evaluation function, which is represented as the real and the future call evaluation index. A weight for allocating is displayed visually.
    Type: Application
    Filed: February 17, 2006
    Publication date: November 9, 2006
    Applicants: Hitachi, Ltd., Hitachi Mito Engineering Co., Ltd.
    Inventors: Toshifumi Yoshikawa, Satoru Toriyabe, Takamichi Hoshino, Shunichi Tanae, Atsuya Fujino, Ryou Okabe, Masaya Furuhashi, Kenji Yoneda
  • Publication number: 20060215151
    Abstract: In order to provide a line light irradiation device that can improve efficiency of condensing light with a compact size and that is almost free from unevenness of lighting, the line light irradiation device of the present claimed invention comprises multiple light emitting parts 2 each of which is provided with a light irradiating part 21 where multiple optical fibers 4 are thickly arranged in a line with light leading out end portions 4a of the multiple optical fibers 4 forming a straight line and a columnar lens 22 arranged to extend along a direction of the line P in front of the light irradiating part 21 in pairs, and that irradiate line light LL that converges into a straight line, and a holding body 3 that is arranged to face to a work W as being an object on which the line light LL is to be irradiated, on which monitoring bores 3a, 3b are arranged to penetrate in order to monitor the work W, and that holds the light emitting parts 2 so that each optical axis face of the line light LL irradiated from ea
    Type: Application
    Filed: August 4, 2004
    Publication date: September 28, 2006
    Inventors: Kenji Yoneda, Takashi Sugita
  • Publication number: 20060213728
    Abstract: An elevator group control system is provided which stably keeps cage's position in temporally equal interval condition over a long period of time. The present invention provides a system comprising: reference route generating means, which for each elevator, generates a reference route which the elevator should follow with respect to the time axis and position axis; and assignment means which selects an elevator for assignment to a generated hall call so as to make the actual trajectory of each elevator closer to its reference route. Since reference routes which guides the cage's trajectory into temporally equal interval condition are generated and car assignment is executed so as to make the respective cages follow their reference routes, it is possible to allow the cages to settle in temporally equal interval condition over a long period of time.
    Type: Application
    Filed: August 25, 2005
    Publication date: September 28, 2006
    Applicant: Hitachi Ltd.
    Inventors: Toshifumi Yoshikawa, Satoru Toriyabe, Takamichi Hoshino, Atsuya Fujino, Shunichi Tanae, Hiromi Inaba, Kenji Yoneda, Toru Yamaguchi, Ryo Okabe
  • Patent number: 7098154
    Abstract: Part of a first oxide film formed by thermal oxidation is removed by etching. A second oxide film is formed in the part of substrate from which the first oxide film has been removed using heated nitric acid. The two oxide films are nitrided by a nitrogen plasma having a low energy so as to be first and second gate insulating films, i.e., oxynitride films, respectively.
    Type: Grant
    Filed: February 10, 2004
    Date of Patent: August 29, 2006
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Kenji Yoneda
  • Publication number: 20060163498
    Abstract: Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.
    Type: Application
    Filed: August 16, 2005
    Publication date: July 27, 2006
    Inventors: Kenji Yoneda, Masahiko Niwayama
  • Patent number: 7052162
    Abstract: An improved illuminating unit for illuminating a target portion of an object to be illuminated is provided, including: a fiber holding portion having a fiber insert hole holding a light-emitting end portion of an optical fiber; and a lens holding portion located downstream of the fiber holding portion in a light traveling direction, light emitted from a light-emitting end of the optical fiber being directed to the target portion through a lens held by the lens holding portion, wherein: the fiber insert hole comprises an equal-diameter portion having a diameter substantially equal to a diameter of the optical fiber, and a larger-diameter portion having a larger diameter than the equal-diameter portion and opening at one end face of the fiber holding portion, the fiber insert hole holding the optical fiber extending through the equal-diameter portion; and the lens is abutted against the one end face of the fiber holding portion or a forward end face of a fusion-deformed portion of the optical fiber, the fusion-
    Type: Grant
    Filed: July 10, 2003
    Date of Patent: May 30, 2006
    Assignee: CCS, Inc.
    Inventor: Kenji Yoneda
  • Patent number: 7050693
    Abstract: An improved optical fiber holder is provided, including: a tubular member (3) for fitting over an optical fiber bundle (1) consisting of a bundle of plural optical fibers (11) to prevent the optical fibers (11) from separating from each other; and a pressing structure (5) for exerting a pressing force on the optical fiber bundle (1) in a direction perpendicular to a longitudinal direction of the optical fiber bundle (1) to press the optical fiber bundle (1) against an inner periphery (3a) of the tubular member (3).
    Type: Grant
    Filed: July 10, 2003
    Date of Patent: May 23, 2006
    Assignee: CCS, Inc.
    Inventor: Kenji Yoneda
  • Publication number: 20060050499
    Abstract: A light intensity adjustment system is provided which greatly decreases or makes unnecessary image compensation by the image processing device side, improves scan precision, and can reduce the scan time; and which comprises: a light irradiation device 1 that has multiple independently light intensity adjustable light irradiation units 11, and that irradiates light facing a predetermined target area A; a photographic device 2 that photographs said target area A through a lens, and outputs a target area image that is the photographed image; and a light intensity control unit 3 that controls the respective light intensities of said light irradiation units 11 so that the brightness of the various parts of the target area images that said photographic device 2 has output approaches a predetermined standard value.
    Type: Application
    Filed: November 14, 2003
    Publication date: March 9, 2006
    Inventors: Kenji Yoneda, Shigehide Hirooka
  • Publication number: 20060047700
    Abstract: An information processing system P3 is communicably connected with multiple controlling systems P2 that promote the growth or health of living organisms by controlling at the least the light irradiated on such living organisms by a light irradiating means X1, and the environmental data produced by one controlling system P1 and concerning the beneficial environmental parameters including the light irradiated on the living organisms are transmitted to and administered by the information processing system P3 so that the environmental data from one of the controlling systems P2 is delivered from the information processing system P3 to any of the other controlling systems P2, and royalty data concerning royalties is produced in relationship to a controlling system identifier that uniquely identifies the one controlling system P1 when the information processing system P3 receives or delivers the environmental data.
    Type: Application
    Filed: September 26, 2003
    Publication date: March 2, 2006
    Inventor: Kenji Yoneda
  • Patent number: D520143
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: May 2, 2006
    Assignee: CCS, Inc.
    Inventor: Kenji Yoneda