Patents by Inventor Kenneth P. Rodbell
Kenneth P. Rodbell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040170249Abstract: An apparatus and method for mapping film thickness of textured polycrystalline thin films. Multiple sample films of known thicknesses are provided, and each is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of each sample film is calculated based on multiple incomplete pole figures collected from the diffraction image and used to correct the x-ray diffraction intensities obtained from such sample film. Corrected and integrated diffraction intensities of the sample films are then correlated to respective known film thicknesses of such films, and the correlation so determined can be used to map the film thickness of a textured polycrystalline thin film of unknown thickness, based on the corrected and integrated diffraction intensity calculated for such thin film.Type: ApplicationFiled: December 23, 2003Publication date: September 2, 2004Inventors: Krzysztof J. Kozaczek, David S. Kurtz, Paul R. Moran, Roger I. Martin, Patrick W. Dehaven, Kenneth P. Rodbell, Sandra G. Malhotra
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Publication number: 20040162013Abstract: A polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The fibers define interstices, and the precursors fill these interstices substantially completely before completion of the reaction. The pad may include a thin layer of free fibers at its polishing surface. A segment of at least a portion of the free fibers are embedded in the adjacent body of the polymer and fibers. The fibers may be separate, or in the form of a woven or non-woven web.Type: ApplicationFiled: February 23, 2004Publication date: August 19, 2004Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, FREUDENBERG NONWOVENS, LTD. PARTNERSHIPInventors: Shyng-Tsong Chen, Kenneth P. Rodbell, Oscar Kai Chi Hsu, Jean Vangsness, David S. Gilbride, Scott Clayton Billings, Kenneth Davis
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Publication number: 20040069648Abstract: A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.Type: ApplicationFiled: October 15, 2002Publication date: April 15, 2004Applicant: International Business Machines CorporationInventors: Panayotis Andricacos, Hariklia Deligianni, Wilma Jean Horkans, Keith T. Kwietniak, Michael Lane, Sandra G. Malhotra, Fenton Read McFeely, Conal Murray, Kenneth P. Rodbell, Philippe M. Vereecken
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Patent number: 6712681Abstract: A polishing pad having a body comprising fibers embedded in a matrix polymer formed by a reaction of polymer precursors. The fibers define interstices, and the precursors fill these interstices substantially completely before completion of the reaction. The pad may include a thin layer of free fibers at its polishing surface. A segment of at least a portion of the free fibers are embedded in the adjacent body of the polymer and fibers. The fibers may be separate, or in the form of a woven or non-woven web.Type: GrantFiled: November 20, 2000Date of Patent: March 30, 2004Assignee: International Business Machines CorporationInventors: Shyng-Tsong Chen, Kenneth P. Rodbell, Oscar Kai Chi Hsu, Jean Vangsness, David S. Gilbride, Scott Clayton Billings, Kenneth Davis
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Publication number: 20040047447Abstract: An apparatus and method for mapping film thickness of one or more textured polycrystalline thin films. Multiple sample films of known thickness are provided. Each sample film is irradiated by x-ray at a measurement point to generate a diffraction image that captures a plurality of diffraction arcs. Texture information (i.e., pole densities) of the sample film, is calculated based on incomplete pole figures collected on the diffraction image and used to correct the x-ray diffraction intensities from such sample. The corrected diffraction intensities are integrated for each sample film, and then used for constructing a calibration curve that correlates diffraction intensities with respective known film thickness of the sample films. The film thickness of a textured polycrystalline thin film of unknown thickness can therefore be mapped on such calibration curve, using a corrected and integrated diffraction intensity obtained for such thin film of unknown thickness.Type: ApplicationFiled: August 21, 2002Publication date: March 11, 2004Inventors: Krzysztof J. Kozaczek, David S. Kurtz, Paul R. Moran, Roger I. Martin, Patrick W. Dehaven, Kenneth P. Rodbell, Sandra G. Malhotra
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Publication number: 20040030956Abstract: A method and system for mitigating the impact of radiation induced in a data processor incorporating integrated circuits. The method comprises the steps of determining the location of the data processor, determining a set of radiation sources and intensities at that location, and estimating the soft error rate of the data processor as a function of the determined radiation intensities and geometric characteristics of said integrated circuits to provide an estimate value. The data processor is modified (either hardware or software) in response to the estimate value at times the estimate value exceeds a predetermined value.Type: ApplicationFiled: August 7, 2002Publication date: February 12, 2004Applicant: International Business Machines CorporationInventors: Kenneth P. Rodbell, Henry H.K. Tang, Robert M. Trepp, Robert Chi-Foon Wong
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Patent number: 6685548Abstract: Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s).Type: GrantFiled: April 29, 2003Date of Patent: February 3, 2004Assignee: International Business Machines CorporationInventors: Shyng-Tsong Chen, Kenneth M. Davis, Kenneth P. Rodbell
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Patent number: 6656019Abstract: Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s). The grooves may be formed in the polishing surface and/or the rear opposite surface of the pad and passages may be provided for interconnecting the rear grooves with the polishing surface or the front grooves.Type: GrantFiled: September 25, 2000Date of Patent: December 2, 2003Assignee: International Business Machines CorporationInventors: Shyng-Tsong Chen, Kenneth M. Davis, Kenneth P. Rodbell
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Publication number: 20030199234Abstract: Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s).Type: ApplicationFiled: April 29, 2003Publication date: October 23, 2003Inventors: Shyng-Tsong Chen, Kenneth M. Davis, Kenneth P. Rodbell
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Publication number: 20030098489Abstract: A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2 (CO)10 as the source material is used when Re is to be deposited.Type: ApplicationFiled: November 29, 2001Publication date: May 29, 2003Applicant: International Business Machines CorporationInventors: Ricky Amos, Douglas A. Buchanan, Cyril Cabral, Alessandro C. Callegari, Supratik Guha, Hyungjun Kim, Fenton R. McFeely, Vijay Narayanan, Kenneth P. Rodbell, John J. Yurkas
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Patent number: 6452276Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.Type: GrantFiled: April 30, 1998Date of Patent: September 17, 2002Assignee: International Business Machines CorporationInventors: Stephan A. Cohen, Fenton R. McFeely, Cevdet I. Noyan, Kenneth P. Rodbell, John J. Yurkas, Robert Rosenberg
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Patent number: 6413866Abstract: A method of enriching the surface of a substrate with a solute material that was originally dissolved in the substrate material, to yield a uniform dispersion of the solute material at the substrate surface. The method generally entails the use of a solvent material that is more reactive than the solute material to a chosen reactive agent. The surface of the substrate is reacted with the reactive agent to preferentially form a reaction compound of the solvent material at the surface of the substrate. As the compound layer develops, the solute material segregates or diffuses out of the compound layer and into the underlying substrate, such that the region of the substrate nearest the compound layer becomes enriched with the solute material. At least a portion of the compound layer is then removed without removing the underlying enriched region of the substrate.Type: GrantFiled: March 15, 2000Date of Patent: July 2, 2002Assignee: International Business Machines CorporationInventors: Horatio S. Wildman, Lawrence A. Clevenger, Chenting Lin, Kenneth P. Rodbell, Stefan Weber, Roy C. Iggulden, Maria Ronay, Florian Schnabel
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Publication number: 20020066673Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.Type: ApplicationFiled: January 22, 2002Publication date: June 6, 2002Applicant: International Business Machines CorporationInventors: Kenneth P. Rodbell, Panayotis C. Andricacos, Cyril Cabral, Lynne M. Gignac, Cyprian E. Uzoh, Peter S. Locke
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Patent number: 6383066Abstract: A multilayered polishing pad especially suitable for chemical-mechanical polishing or planarizing metal, semiconductor or optical surfaces is provided. The invention allows the mechanical and polishing properties of the several layers to be independently varied.Type: GrantFiled: June 23, 2000Date of Patent: May 7, 2002Assignee: International Business Machines CorporationInventors: Shyng-Tsong Chen, Alex Siu Keung Chung, Oscar Kai Chi Hsu, Kenneth P. Rodbell, Jean Vangsness
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Patent number: 6344129Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.Type: GrantFiled: October 13, 1999Date of Patent: February 5, 2002Assignee: International Business Machines CorporationInventors: Kenneth P. Rodbell, Panayotis C. Andricacos, Cyril Cabral, Jr., Lynne M. Gignac, Cyprian E. Uzoh, Peter S. Locke
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Patent number: 6340325Abstract: Grooves are formed in a COD pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pad then forms a groove which extends laterally away from the recess and has a depth substantially the same as that of the recess. The depths of the initial recess and the groove are limited by applying a vacuum to the working surface of the pad to keep it in contact with the stop member(s). Different lateral movements between the bit and the pad are used to form a variety of groove patterns, the depths of which are precisely controlled by the stop member(s).Type: GrantFiled: June 29, 2000Date of Patent: January 22, 2002Assignee: International Business Machines CorporationInventors: Shyng-Tsong Chen, Alex Siu Keung Chung, Kenneth M. Davis, Oscar Kai Chi Hsu, Kenneth P. Rodbell
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Patent number: 6333120Abstract: Copper is plated onto a substrate by plating a layer of copper onto the substrate to provide a maximum thickness of about 350 nanometers, followed by subjecting the copper coated substrate to an oxygen containing gaseous ambient in order to roughen the copper surface. Next, a second layer of copper is electroplated onto the structure to provide the desired thickness. The texture of the second layer of copper is independent of the underlayer of copper and has a random or at least substantially random texture.Type: GrantFiled: October 27, 1999Date of Patent: December 25, 2001Assignee: International Business Machines CorporationInventors: Patrick William DeHaven, Peter S. Locke, Kenneth P Rodbell, Cyprian Emeka Uzoh
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Patent number: 6200894Abstract: A method of enhancing the aluminum interconnect properties in very fine metalization patterns interconnecting integrated circuits that improves the texture and electromigration resistance of aluminum in thin films. Enhanced performance can be obtained by forming a smooth oxide layer in situ, or by surface conditioning a previously formed oxide layer in an appropriate manner to provide the requisite surface smoothness, then by refining the aluminum microstructure by hot deposition or ex-situ heat treatment.Type: GrantFiled: June 10, 1996Date of Patent: March 13, 2001Assignees: International Business Machines Corporation, Kabushiki Kaisha ToshibaInventors: Thomas J. Licata, Katsuya Okumura, Kenneth P. Rodbell
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Patent number: 6037795Abstract: A test layout increases the sample size of electromigration experiments. Through pad sharing, the number of structures tested can be increased, allowing hundreds of identical structures to be tested in a single high temperature oven door.Type: GrantFiled: September 26, 1997Date of Patent: March 14, 2000Assignee: International Business Machines CorporationInventors: Ronald G. Filippi, James J. Poulin, Robert D. Raviart, Kenneth P. Rodbell, Richard G. Smith, Timothy D. Sullivan, Alexander J. Swinton
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Patent number: 5943601Abstract: A metallization structure is fabricated by depositing an underlayer of a group IVA metal having a thickness of about 90 to about 110 angstroms, and depositing a layer of aluminum and/or an aluminum alloy. The metallization structure obtained exhibits enhanced electromigration and is highly textured and is especially suitable for forming electrical connections or wiring.Type: GrantFiled: April 30, 1997Date of Patent: August 24, 1999Assignee: International Business Machines CorporationInventors: Takamasa Usui, Patrick W. DeHaven, Kenneth P. Rodbell, Ronald G. Filippi, Chi-Hua Yang, Tomio Katata, Hideaki Aochi