Patents by Inventor Kenneth P. Rodbell

Kenneth P. Rodbell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multi-doped silicon antifuse device for integrated circuit
    Patent number: 8860176
    Abstract: The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. Another such antifuse includes a reactive material, at least one metal and a silicon region adjacent to the at least one metal and thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: October 14, 2014
    Assignee: International Business Machines Corporation
    Inventors: Gregory M. Fritz, Bahman Hekmatshoartabari, Ali Khakifirooz, Dirk Pfeiffer, Kenneth P. Rodbell, Davood Shahrjerdi
  • METHOD FOR CONVERSION OF COMMERCIAL MICROPROCESSOR TO RADIATION-HARDENED PROCESSOR AND RESULTING PROCESSOR
    Publication number: 20140258958
    Abstract: A method is provided to convert commercial microprocessors to radiation-hardened processors and, more particularly, a method is provided to modify a commercial microprocessor for radiation hardened applications with minimal changes to the technology, design, device, and process base so as to facilitate a rapid transition for such radiation hardened applications. The method is implemented in a computing infrastructure and includes evaluating a probability that one or more components of an existing commercial design will be affected by a single event upset (SEU). The method further includes replacing the one or more components with a component immune to the SEU to create a final device.
    Type: Application
    Filed: January 10, 2014
    Publication date: September 11, 2014
    Applicant: International Business Machines Corporation
    Inventors: John A. FIFIELD, Mark C. HAKEY, Jason D. HIBBELER, James S. NAKOS, Tak H. NING, Kenneth P. RODBELL, Ronald D. ROSE, Henry H.K. TANG, Larry WISSEL
  • Microstructure modification in copper interconnect structures
    Patent number: 8828870
    Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
    Type: Grant
    Filed: January 10, 2014
    Date of Patent: September 9, 2014
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Jeffrey P. Gambino, Qiang Huang, Takeshi Nogami, Kenneth P. Rodbell
  • Reactive material for integrated circuit tamper detection and response
    Patent number: 8816717
    Abstract: The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one reactive material and at least one memory cell coupled to the at least one reactive material. An exothermic reaction in the at least one reactive material causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes a substrate, at least one gate on the substrate, and a reactive material between a first well and a second well of the at least one gate. A reaction in the reactive material causes a short in the gate.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: August 26, 2014
    Assignee: International Business Machines Corporation
    Inventors: Gregory M. Fritz, Chung H. Lam, Dirk Pfeiffer, Kenneth P. Rodbell, Robert L. Wisnieff
  • Tunable radiation source
    Patent number: 8785217
    Abstract: An energy distribution of soft error-inducing radiation likely to be encountered by an electronic circuit during operation is determined. A tuned radiation source having a source energy distribution similar to the determined energy distribution is prepared. The electronic circuit is tested using the tuned radiation source.
    Type: Grant
    Filed: September 12, 2011
    Date of Patent: July 22, 2014
    Assignee: International Business Machines Corporation
    Inventors: Michael A. Gaynes, Michael S. Gordon, Nancy C. LaBianca, Kenneth P. Rodbell
  • Annealing copper interconnects
    Patent number: 8772161
    Abstract: A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: July 8, 2014
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Gregory M. Fritz, Christian Lavoie, Conal E. Murray, Kenneth P Rodbell
  • MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES
    Publication number: 20140127899
    Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
    Type: Application
    Filed: January 10, 2014
    Publication date: May 8, 2014
    Applicant: International Business Machines Corporation
    Inventors: Cyril Cabral, JR., Jeffrey P. Gambino, Qiang Huang, Takeshi Nogami, Kenneth P. Rodbell
  • INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE
    Publication number: 20140103286
    Abstract: The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and at least one memory cell coupled to the at least one photovoltaic cell. When the at least one photovoltaic cell is exposed to radiation, the at least one photovoltaic cell generates a current that causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes at least one photovoltaic cell and a reactive material coupled to the at least one photovoltaic cell, wherein a current from the at least one photovoltaic cell triggers an exothermic reaction in the reactive material.
    Type: Application
    Filed: October 17, 2012
    Publication date: April 17, 2014
    Applicant: International Business Machines Corporation
    Inventors: Jack O. Chu, Gregory M. Fritz, Harold J. Hovel, Young-Hee Kim, Dirk Pfeiffer, Kenneth P. Rodbell
  • REACTIVE MATERIAL FOR INTEGRATED CIRCUIT TAMPER DETECTION AND RESPONSE
    Publication number: 20140103957
    Abstract: The present disclosure relates to integrated circuits having tamper detection and response devices and methods for manufacturing such integrated circuits. One integrated circuit having a tamper detection and response device includes at least one reactive material and at least one memory cell coupled to the at least one reactive material. An exothermic reaction in the at least one reactive material causes an alteration to a memory state of the at least one memory cell. Another integrated circuit having a tamper detection and response device includes a substrate, at least one gate on the substrate, and a reactive material between a first well and a second well of the at least one gate. A reaction in the reactive material causes a short in the gate.
    Type: Application
    Filed: October 17, 2012
    Publication date: April 17, 2014
    Applicant: International Business Machines Corporation
    Inventors: Gregory M. Fritz, Chung H. Lam, Dirk Pfeiffer, Kenneth P. Rodbell, Robert L. Wisnieff
  • ANTIFUSE DEVICE FOR INTEGRATED CIRCUIT
    Publication number: 20140103485
    Abstract: The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. Another such antifuse includes a reactive material, at least one metal and a silicon region adjacent to the at least one metal and thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state.
    Type: Application
    Filed: October 17, 2012
    Publication date: April 17, 2014
    Applicant: International Business Machines Corporation
    Inventors: GREGORY M. FRITZ, BAHMAN HEKMATSHOARTABARI, ALI KHAKIFIROOZ, DIRK PFEIFFER, KENNETH P. RODBELL, DAVOOD SHAHRJERDI
  • Fully depleted silicon on insulator neutron detector
    Patent number: 8614111
    Abstract: A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3 (3He), and gadolinium-157 (157Gd).
    Type: Grant
    Filed: July 25, 2011
    Date of Patent: December 24, 2013
    Assignee: International Business Machines Corporation
    Inventors: Michael S. Gordon, Kenneth P. Rodbell, Jeng-Bang Yau
  • MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURES
    Publication number: 20130285245
    Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
    Type: Application
    Filed: March 25, 2013
    Publication date: October 31, 2013
    Inventors: Cyril Cabral, Jr., Jeffrey P. Gambino, Qiang Huang, Takeshi Nogami, Kenneth P. Rodbell
  • Microstructure modification in copper interconnect structures
    Patent number: 8492897
    Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: July 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Jeffrey P. Gambino, Qiang Huang, Takeshi Nogami, Kenneth P. Rodbell
  • On-chip radiation dosimeter
    Patent number: 8476683
    Abstract: A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: July 2, 2013
    Assignee: International Business Machines Corporation
    Inventors: Michael S. Gordon, Kenneth P. Rodbell, Jeng-Bang Yau
  • TUNABLE RADIATION SOURCE
    Publication number: 20130062740
    Abstract: An energy distribution of soft error-inducing radiation likely to be encountered by an electronic circuit during operation is determined. A tuned radiation source having a source energy distribution similar to the determined energy distribution is prepared. The electronic circuit is tested using the tuned radiation source.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 14, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael A. Gaynes, Michael S. Gordon, Nancy C. LaBianca, Kenneth P. Rodbell
  • Microstructure Modification in Copper Interconnect Structures
    Publication number: 20130062769
    Abstract: A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 14, 2013
    Applicant: International Business Machines Corporation
    Inventors: Cyril Cabral, JR., Takeshi Nogami, Jeffrey P. Gambino, Qiang Huang, Kenneth P. Rodbell
  • ON-CHIP RADIATION DOSIMETER
    Publication number: 20130049130
    Abstract: A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.
    Type: Application
    Filed: August 8, 2012
    Publication date: February 28, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael S. Gordon, Kenneth P. Rodbell, Jeng-Bang Yau
  • Annealing Copper Interconnects
    Publication number: 20130040454
    Abstract: A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.
    Type: Application
    Filed: August 8, 2011
    Publication date: February 14, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Cyril Cabral, JR., Gregory M. Fritz, Christian Lavoie, Conal E. Murray, Kenneth P. Rodbell
  • FULLY DEPLETED SILICON ON INSULATOR NEUTRON DETECTOR
    Publication number: 20130026544
    Abstract: A method for forming a neutron detector comprises thinning a backside silicon substrate of a radiation detector; and forming a neutron converter layer on the thinned backside silicon substrate of the radiation detector to form the neutron detector. The neutron converter layer comprises one of boron-10 (10B), lithium-6 (6Li), helium-3 (3He), and gadolinium-157 (157Gd).
    Type: Application
    Filed: July 25, 2011
    Publication date: January 31, 2013
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael S. Gordon, Kenneth P. Rodbell, Jeng-Bang Yau
  • On-chip radiation dosimeter
    Patent number: 8361829
    Abstract: A method for forming a semiconductor device includes forming an implant mask on a substrate, such that a first portion of the substrate is located under the implant mask, and a second portion of the substrate is exposed; performing oxygen ion implantation of the substrate; removing the implant mask; and forming a first field effect transistor (FET) on the first portion of the substrate, and forming a second FET on the second portion of the substrate, wherein the second FET has a higher radiation sensitivity than the first FET.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: January 29, 2013
    Assignee: International Business Machines Corporation
    Inventors: Michael S. Gordon, Kenneth P. Rodbell, Jeng-Bang Yau