Abstract: A display device includes: a display panel; a light guide plate which guides light to the display panel including first and second side surfaces opposite to each other; a light source module disposed along the first side surface of the light guide plate; a mold frame disposed along the second side surface of the light guide plate; a bottom chassis which accommodates the light source module, the mold frame and the light guide plate, including a first sidewall facing the first side surface of the light guide plate and an extension portion which extends from the first sidewall to overlap an upper surface of the light guide plate; a first adhesive member disposed between the extension portion and the display panel; and a second adhesive member overlapping an upper surface of the light guide plate and an upper surface of the mold frame.

Abstract: Disclosed herein is a urethral catheter with an anti-infection structure for infants in which, in a state in which a hose is combined with a main pipe in advance, the reinforcement rod is inserted into/released from a urethral insertion pipe through a reinforcement rod inflow and outflow pipe separately formed at one side of the main pipe to prevent leakage of urine. When the reinforcement rod is inserted into the urethral insertion pipe in the combined state of the hose with the urethral insertion pipe and is then released from the urethral insertion pipe, setting of a urine storage bag is completed, thereby shortening a time to install of the urine storage bag, reducing medical staff's trouble, and preventing contamination and infection of a patient and the medical staff due to leakage of urine from the bag to the outside.

Abstract: Backlight unit and display device are provided. According to an exemplary embodiment of the present disclosure, a backlight unit includes a glass light guide plate having an upper surface, a light-incident surface which is disposed on one side of the upper surface, and an opposite surface which is disposed on the other side of the upper surface; a light source disposed to face the light-incident surface; and a light-shielding member including a first light-shielding portion, which is in contact with the opposite surface, and a second light-shielding portion, which is in contact with part of the upper surface.

Abstract: A secretion signal peptide sequence (SP) in combination with a cleavage inhibition sequence (CIS) fused to a structural gene sequence in a recombinant expression system can be used to express a full length protein with an SP in a cell. Such a fusion protein may be purified to homogeneity from a membrane fraction of the cell. The SP in combination with the CIS is a protein transduction domain that exhibits superior intracellular protein transduction efficiency when the SP precedes the CIS in a N to C-terminus direction.

Abstract: A secretion signal peptide sequence (SP) in combination with a cleavage inhibition sequence (CIS) fused to a structural gene sequence in a recombinant expression system can be used to express a full length protein with an SP in a cell. Such a fusion protein may be purified to homogeneity from a membrane fraction of the cell. The SP in combination with the CIS is a protein transduction domain that exhibits superior intracellular protein transduction efficiency when the SP precedes the CIS in a N to C-terminus direction.

Abstract: A thickness of a first layer in a structure may be measured based on an original image of the structure. A first boundary of the first layer may be identified in the original image. A second boundary that is substantially indistinguishable in the original image may be identified based on converting the original image into a first image based on the first boundary and generating a second image based on filtering the first image. The first image may be generated based on adjusting partial image portions of the original image to align the representation of the first boundary with an axis line, such that the first image includes a representation of the first boundary that extends substantially in parallel with the axis line. The second boundary may be identified from the second image, and the thickness of the layer may be determined based on the identified first and second boundaries.

Abstract: A system for simulating a semiconductor device comprises a data input module configured to receive structural data of the semiconductor device comprising a first region and a second region, and a spatial discretization generating module configured to divide a space of the semiconductor device using the structural data through division of the first region into first type meshes and division of the second region into second type meshes different from the first type meshes.

Abstract: A secretion signal peptide sequence (SP) in combination with a cleavage inhibition sequence (CIS) fused to a structural gene sequence in a recombinant expression system can be used to express a full length protein with an SP in a cell. Such a fusion protein may be purified to homogeneity from a membrane fraction of the cell. The SP in combination with the CIS is a protein transduction domain that exhibits superior intracellular protein transduction efficiency when the SP precedes the CIS in a N to C-terminus direction.

Abstract: There is provided a semiconductor device to enhance operating characteristics by reducing parasitic capacitance between a gate electrode and other nodes.

Abstract: The present invention relates to a novel aminoalkylbenzothiazepine derivative or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition for preventing or treating constipation comprising the same as an active ingredient.

Abstract: Disclosed are an apparatus for measuring a position of a probe for an inclinometer, and a probe. The apparatus for measuring a position of a probe for an inclinometer comprises: a probe connection unit; a cable connection unit; a storage unit; a power supply unit; a magnetic field generator; a rotational number calculation unit, and a probe position calculation unit.

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

Abstract: An apparatus for measuring a displacement of a railroad includes a pair of rail fixing members 100 fixed to enclose a lower part of one rail 10, and installed to be spaced from each other; a lengthwise sensor casing 200a installed between the pair of rail fixing members 100; and an angle sensor installed at the lengthwise sensor casing 200a so as to measure a change of an angle between the pair of rail fixing members 100. With such a configuration, the present invention can be applied to a structure of railroad ties formed of a concrete material. Further, data can be obtained with high reliability, since a displacement of the rail is directly measured.

Abstract: An integrated circuit including a first standard cell including, first transistors, the first transistors being first unfolded transistors, a first metal pin, a second metal pin, and a third metal pin on a first layer, the first metal pin and the second metal pin having a first minimum metal center-to-metal center pitch therebetween less than or equal to 80 nm, a fourth metal pin and a fifth metal pin at a second layer, the fourth metal pin and the fifth metal pin extending in a second direction, the second direction being perpendicular to the first direction, a first via between the first metal pin and the fourth metal pin, and a second via between the third metal pin and the fifth metal pin such that a first via center-to-via center space between the first via and the second via is greater than double the first minimum metal center-to-metal center pitch.

Abstract: The present invention relates to a novel aminoalkylbenzothiazepine derivative or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition for preventing or treating constipation comprising the same as an active ingredient.

Abstract: There is provided a semiconductor device to enhance operating characteristics by reducing parasitic capacitance between a gate electrode and other nodes.

Abstract: A thickness of a first layer in a structure may be measured based on an original image of the structure. A first boundary of the first layer may be identified in the original image. A second boundary that is substantially indistinguishable in the original image may be identified based on converting the original image into a first image based on the first boundary and generating a second image based on filtering the first image. The first image may be generated based on adjusting partial image portions of the original image to align the representation of the first boundary with an axis line, such that the first image includes a representation of the first boundary that extends substantially in parallel with the axis line. The second boundary may be identified from the second image, and the thickness of the layer may be determined based on the identified first and second boundaries.

Abstract: A circuit design method includes extracting aging information of each of multiple devices from a netlist including one or more devices and a model library including information associated with a process variation. An arithmetic operation is performed using the information associated with the process variation and the aging information to calculate a deviation of the process variation of each device caused by aging. A netlist and/or a model library is extracted in which the calculated deviation is reflected.

Abstract: A simulation method includes receiving a netlist describing a plurality of devices, performing an arithmetic operation by using values of random telegraph signal (RTS) noise factors respectively corresponding to the plurality of devices, generating an RTS model corresponding to each of the devices, based on a result of the arithmetic operation, and generating a netlist in which the RTS model is reflected.

Abstract: Provided are a method for fabricating a semiconductor device The method for fabricating include providing a substrate including a first region and a second region, the first region including first and second sub-regions, and the second region including third and fourth sub-regions, forming first to fourth fins on the first and second regions to protrude from the substrate, the first fin being formed on the first sub-region, the second fin being formed on the second sub-region, the third fin being formed on the third sub-region, and the fourth fin being formed on the fourth sub-region, forming first to fourth dummy gate structures to intersect the first to fourth fins, the first dummy gate structure being formed on the first fin, the second dummy gate structure being formed on the second fin, the third dummy gate structure being formed on the third fin, and the fourth dummy gate structure being formed on the fourth fin, forming a first doped region in each of the first and second fins and a second doped region