Abstract: Disclosed herein is a urethral catheter with an anti-infection structure for infants in which, in a state in which a hose is combined with a main pipe in advance, the reinforcement rod is inserted into/released from a urethral insertion pipe through a reinforcement rod inflow and outflow pipe separately formed at one side of the main pipe to prevent leakage of urine. When the reinforcement rod is inserted into the urethral insertion pipe in the combined state of the hose with the urethral insertion pipe and is then released from the urethral insertion pipe, setting of a urine storage bag is completed, thereby shortening a time to install of the urine storage bag, reducing medical staff's trouble, and preventing contamination and infection of a patient and the medical staff due to leakage of urine from the bag to the outside.

Abstract: An apparatus for measuring a displacement of a railroad includes a pair of rail fixing members 100 fixed to enclose a lower part of one rail 10, and installed to be spaced from each other; a lengthwise sensor casing 200a installed between the pair of rail fixing members 100; and an angle sensor installed at the lengthwise sensor casing 200a so as to measure a change of an angle between the pair of rail fixing members 100. With such a configuration, the present invention can be applied to a structure of railroad ties formed of a concrete material. Further, data can be obtained with high reliability, since a displacement of the rail is directly measured.

Abstract: Provided are a method for fabricating a semiconductor device The method for fabricating include providing a substrate including a first region and a second region, the first region including first and second sub-regions, and the second region including third and fourth sub-regions, forming first to fourth fins on the first and second regions to protrude from the substrate, the first fin being formed on the first sub-region, the second fin being formed on the second sub-region, the third fin being formed on the third sub-region, and the fourth fin being formed on the fourth sub-region, forming first to fourth dummy gate structures to intersect the first to fourth fins, the first dummy gate structure being formed on the first fin, the second dummy gate structure being formed on the second fin, the third dummy gate structure being formed on the third fin, and the fourth dummy gate structure being formed on the fourth fin, forming a first doped region in each of the first and second fins and a second doped region

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

Abstract: A secretion signal peptide sequence (SP) in combination with a cleavage inhibition sequence (CIS) fused to a structural gene sequence in a recombinant expression system can be used to express a full length protein with an SP in a cell. Such a fusion protein may be purified to homogeneity from a membrane fraction of the cell. The SP in combination with the CIS is a protein transduction domain that exhibits superior intracellular protein transduction efficiency when the SP precedes the CIS in a N to C-terminus direction.

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

Abstract: An amnion insertion device has been developed for an emergency cervical cerclarge operation to push back the bulged amnion into the uterus. The present invention is configured with a dilation balloon that forms at the front end portion of the air injection tube for stably supporting a support. Once the dilation balloon is inflated the inflated state will prevent deflation or sliding backwards during the cervical cerclarge operation while the bulged amnion is being pushed back into the uterus to facilitate the operation. Because the external tube and air injection tube have integrally formed a dual-tube configuration, a surgeon on duty can entirely grip the amnion insertion device by one hand, and will have the other hand free to stitch up the cervix.

Abstract: A system for simulating a semiconductor device comprises a data input module configured to receive structural data of the semiconductor device comprising a first region and a second region, and a spatial discretization generating module configured to divide a space of the semiconductor device using the structural data through division of the first region into first type meshes and division of the second region into second type meshes different from the first type meshes.

Abstract: Disclosed is a medical tube fixing device, and more particularly a medical tube fixing device, which may ensure rapid coupling with a medical tube with minimal movement of the medical tube, and which includes a fixing member attached to a human body, the fixing member being flexibly operated in response to movement of the medical tube, thereby preventing deterioration in adhesive strength thereof. With provision of the medical tube fixing device, it is possible to rapidly fix or separate the medical tube to or from a desired portion of the human body, and to minimize movement of the fixing member caused during movement of the medical tube, thereby preventing deterioration in adhesive strength of the fixing member.

Abstract: An amnion insertion device has developed for an emergency cervical cerclage operation to push back the bulged amnion into the uterus. The amnion insertion device of the present invention has configured that the dilation balloon (160) forms at the front end portion of the air injection tube (130) for stably supporting by the support (150). Once the dilation balloon (160) is being inflated, the inflating state will not be deflated or slide backward during the cervical cerclage operation while the bulged amnion is pushing back into the uterus to facilitate the operation. Because the external tube (140) and air injection tube (130) have integrally formed a dual-tube configuration, a surgeon on duty can be entirely gripped the amnion insertion device (100) by one hand, and will have other hand free to stitch up the cervix. Thereby, the operator can perform efficient surgery to achieve the best result of the cervical cerclage operation.

Abstract: A semiconductor device including a substrate having a trench formed therein, a plurality of gate structures, an isolation layer pattern and an insulating interlayer pattern. The substrate includes a plurality of active regions defined by the trench and spaced apart from each other in a second direction. Each of the active regions extends in a first direction substantially perpendicular to the second direction. Each of the plurality of gate structures includes a tunnel insulation layer pattern, a floating gate, a dielectric layer pattern and a control gate sequentially stacked on the substrate. The isolation layer pattern is formed in the trench. First isolation layer pattern has at least one first air gap between sidewalls of at least one adjacent pair of the floating gates. The insulating interlayer pattern is formed between the gate structures, and the first insulating interlayer pattern extends in the second direction.

Abstract: Provided are a land settlement measuring apparatus and a land settlement measuring system. The land settlement measuring apparatus includes a magnetic field detection unit, a microprocessor, and a containing unit. The magnetic field detection unit includes a plurality of magnetic field detection sensors that are separated from each other in a predetermined interval. The microprocessor calculates a differential settlement amount based on a magnetic field detection signal transmitted from the magnetic field detection unit, in the case where a change in the magnetic field is detected by the sensor. The containing unit contains the magnetic field detection unit and the microprocessor. The land settlement measuring system includes a magnetic field generation unit, a land settlement measuring apparatus, and a data logger. The magnetic field generation unit is disposed at a predetermined position of a ground to be adjacent to a hole which is perforated down to an unmovable layer.

Abstract: A nonvolatile memory device includes a semiconductor substrate of a first conductivity type, a plurality of word lines on the semiconductor substrate, each the plurality of word lines including a floating gate of a second conductivity type. A ground select line and a string select line are disposed on respective sides of word lines. An impurity region of the second conductivity type underlies a first word line adjacent the ground select line. The device may further include a second impurity region of the second conductivity type underlying a second word line adjacent the string select line. In still further embodiments, the device may further include third impurity regions of the second conductivity type underlying respective third word lines between the first word line and the second word line. Methods of forming such devices are also provided.

Abstract: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

Abstract: In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.

Abstract: In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion.

Abstract: In one aspect, a memory device is provided which includes a plurality of bit lines extending in a first direction, a plurality of word lines extending in a second direction, an array of programmable volumes electrically connected between the bit lines and word lines, and thermally conductive striped patterns located between the programmable volumes of the array and extending in at least one of the first and second directions.

Abstract: There is disclosed a plasma gun for bio/medical treatment using atmospheric plasma. The disclosed plasma gun comprises a housing having an elongate chamber provided therein, the chamber having an end at which a nozzle for spraying plasma is positioned; a gas supply unit for supplying a reaction gas to the chamber; and a plasma discharge unit formed with an elongate cavity communicating with the nozzle, the plasma discharge unit including first and second electrodes and a dielectric or insulating barrier material for plasma ignition in the elongate cavity.

Abstract: Disclosed herein are an apparatus and method for manufacturing a balloon catheter in which a non-contact type laser perforator and printer are separately provided above a primary extruder such that inflation apertures can be uniformly perforated through a non-vulcanized lumen tube and simultaneously, tube cutting positions can be printed on the lumen tube at positions uniformly spaced apart from the inflation apertures without stopping a primary extrusion process. Also, a bond preventing agent layer is coated on the lumen tube at balloon inflating portions prior to cutting the tube, to facilitate a secondary extrusion of the tube. With this configuration, continuous and accurate perforation of inflation apertures is possible and automatic tube cutting can be achieved based on the printed tube cutting positions. Also, the present invention can compensate for a time delay due to a bond preventing agent application process and achieve high productivity and minimized loss of material.

Abstract: The present invention relates to an injection type plasma treatment apparatus. An object of the present invention is to provide an injection type plasma treatment apparatus capable of treating work pieces with a variety of areas, sizes and shapes without damages due to micro arc streamer by using a method of injecting plasma, which is generated through dielectric barrier discharge (DBD) under the normal pressure condition, toward the work pieces.