Abstract: Insulated phase change memory devices are provided that include a first electrode; a second electrode; a phase change material disposed in an electrical path between the first electrode and the second electrode; and a porous dielectric configured to concentrate heat produced by a reset current carried through the phase change material between the first electrode and the second electrode to mitigate an amount of heat that escapes from the phase change material. The porous dielectric may be an inherently porous dielectric material or a dielectric material in which porous structures are induced during fabrication. Methods of fabrication of such devices are also provided.

Abstract: A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.

Abstract: Embodiments of present invention provide a magnetic tunnel junction (MTJ) structure. The MTJ structure includes a MTJ stack, the MTJ stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, wherein the free layer includes multiple sub free layers, the multiple sub free layers being multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the multiple ferromagnetic strips having respective first ends connected to a first electrode and respective second ends connected to a second electrode. A method of forming the MTJ structure is also provided.

Abstract: Described are techniques for corroborating anomalous behavior. The techniques include training devices included in an Internet of Things (IoT) mesh network to independently identify occurrences of anomalous behavior in a proximate physical environment. The techniques further include receiving event data from at least a portion of the devices in the IoT mesh network corresponding to a time window, where the event data reports occurrences of at least one type of anomalous behavior. The techniques further include corroborating the at least one type of anomalous behavior to determine that the occurrences of the at least one type of anomalous behavior indicate an anomalous event that meets a reporting threshold for providing notice of the anomalous event. The techniques further include generating a notification regarding the anomalous event.

Abstract: A phase change material (PCM) memory cell having a metal heater element of sub-EUV dimension. The PCM memory cell includes a bottom electrode of a metal-containing material, a memory cell structure including a phase change material; and a metal heater element of sub-extreme ultraviolet (sub-EUV) dimension situated between and electrically connecting the bottom electrode and PCM memory cell structure. The metal heater element is formed of a circular via structure of sub-EUV dimension and has a seamless metal-nitride fill material. The circular via structure of sub-extreme ultraviolet (sub-EUV) dimension further includes a metal-nitride liner of sub-EUV dimension, the metal-nitride liner of sub-EUV dimension including a thicker metal-nitride liner bottom surface portion and thinner sidewall metal-nitride portions. The thicker metal-nitride liner bottom surface portion improves heat insulation and provides for high resistance/low power switching and reduced amorphous phase change material volumes.

Abstract: A structure including alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A structure including horizontally aligned alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode. A method including forming alternating layers of phase change material layers and dielectric encapsulated heater element layers, the alternating layers of phase change material layers and the dielectric encapsulated heater element layers are sandwiched between a first electrode and a second electrode.

Abstract: A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.

Abstract: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.

Abstract: Memory cells and methods of forming the same include forming a hole in an interlayer dielectric to expose an end of a conductive top electrode. A phase change material is conformally deposited on surfaces of the hole. A remaining portion of the hole is filled with a dielectric material after conformally depositing the phase change material.

Abstract: A structure comprising a top electrode and a bottom electrode. The structure further comprises a multilayer stack disposed between the top electrode and the bottom electrode, where the multilayer stack comprises alternating confinement layers and phase-change material layers, and where at least two of the phase-change material layers have different doping concentrations of at least one dopant.

Abstract: A phase change memory device is provided. The phase change memory device includes a phase change memory material within an electrically insulating wall, a first heater terminal in the electrically insulating wall, and two read terminals in the electrically insulating wall.

Abstract: A Phase-Change Memory (PCM) device includes a dielectric layer, a bottom electrode disposed in the dielectric layer, a liner material disposed on the bottom electrode, a phase-change material disposed on the liner material, and a top electrode disposed on the phase-change material and in the dielectric layer.

Abstract: Resistive memory devices are provided which are configured to mitigate resistance drift. A device comprises a phase-change element, a resistive liner, a first electrode, a second electrode, and a third electrode. The resistive liner is disposed in contact with a first surface of the phase-change element. The first electrode is coupled to a first end portion of the resistive liner. The second electrode is coupled to a second end portion of the resistive liner. The third electrode is coupled to the first surface of the phase-change element.

Abstract: A method for forming a phase-change memory cell includes depositing a metal layer over a wafer such that the metal layer covers connection structures of the wafer. The method further includes removing a portion of the metal layer such that the connection structures of the wafer remain covered by a remaining portion of the metal layer. The method further includes forming a phase-change memory stack on a stack area of the remaining portion of the metal layer. The method further includes removing the remaining portion of the metal layer except in the stack area.

Abstract: A non-volatile memory structure may include a phase change memory comprising a phase change material. The non-volatile memory structure may include a Schottky diode in series with the phase change memory, wherein a Schottky barrier of the Schottky diode is a surface of the phase change memory. This may be accomplished through a proper selection of materials for the contact of the phase change memory. This may create an integrated diode-memory structure which may control directionality of current without a penalty on the footprint of the structure.

Abstract: A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode. A structure including an inner electrode and an outer electrode on a substrate and a phase change material layer, the phase change material layer vertically aligned above both the inner electrode and the outer electrode, where the inner electrode and the outer electrode are on the same horizontal plane. A method including forming an inner electrode and an outer electrode simultaneously on a substrate, forming a phase change material layer above both the inner electrode and the outer electrode.

Abstract: A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.

Abstract: A phase change memory (PCM) cell includes a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, and a phase change section positioned between the first electrode and the second electrode. The phase change section includes a first phase change material having a first resistance drift coefficient, and a second phase change material having a second resistance drift coefficient that is greater than the first resistance drift coefficient. An axis of the PCM cell extends between the first electrode and the second electrode, and the second phase change material is offset from the first phase change material in a direction that is perpendicular to the axis.

Abstract: A plurality of bit lines corresponding to elements of an input vector intersect a plurality of word lines and a plurality of memristive cells are located at the intersections. At least three cells are grouped together to represent a single matrix element. At least three word lines correspond to each element of an output vector. An A/D converter is coupled to each of the word lines, and for each line, except a first, in each group, a shifter has an input coupled to one of the A/D converters. For each group, an addition-subtraction block adds the output of the A/D converter coupled to the first one of the word lines to outputs of each of the shifters except that for a last one of the word lines, subtracts the output of the last shifter, and outputs a corresponding element of an output vector.

Abstract: A phase change memory structure including a bottom electrode; a top electrode; a first phase change material between the bottom electrode and the top electrode; a first dielectric surrounding the first phase change material; a second dielectric surrounding the top electrode, the second dielectric having selective adhesion to a metal as compared to the first phase change material; a first metal feature contacting the bottom electrode; and a second metal feature contacting the top electrode.