Abstract: A computer-implemented method, a computer system and a computer program product recognize relevant objects in images in real time. The method includes capturing an image of a surrounding environment using a device. The method also includes identifying an object and a shape of the object in the image of the surrounding environment using a computer vision algorithm. The method further includes determining that the object is a relevant object based on the shape of the object. Lastly, the method includes performing an operational action based on the relevant object.

Abstract: Described are techniques for corroborating anomalous behavior. The techniques include training devices included in an Internet of Things (IoT) mesh network to independently identify occurrences of anomalous behavior in a proximate physical environment. The techniques further include receiving event data from at least a portion of the devices in the IoT mesh network corresponding to a time window, where the event data reports occurrences of at least one type of anomalous behavior. The techniques further include corroborating the at least one type of anomalous behavior to determine that the occurrences of the at least one type of anomalous behavior indicate an anomalous event that meets a reporting threshold for providing notice of the anomalous event. The techniques further include generating a notification regarding the anomalous event.

Abstract: A first phase change material layer vertically aligned above a bottom electrode, a dielectric layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the dielectric layer, an inner electrode physically and electrically connected to the first phase change material layer and the second phase change material layer, the inner electrode surrounded by the dielectric layer, a top electrode vertically aligned above the second phase change material layer. A first phase change material layer vertically aligned above a bottom electrode, a filament layer vertically aligned above the first phase change material layer, a second phase change material layer vertically aligned above the filament layer, an inner break in the filament layer connecting the first phase change material layer and the second phase change material layer, a top electrode vertically aligned above the second phase change material layer.

Abstract: A resistive random access memory device comprises: a bottom electrode; a bottom layer of dielectric material formed on the bottom electrode; a plurality of conductive contacts extending from the bottom electrode through the bottom layer of dielectric material; a top layer of dielectric material formed on the bottom layer of dielectric material and on the conductive contacts; a top electrode on the top layer of dielectric material; and at least one filament extending from the plurality of conductive contacts through the top layer of dielectric material to the top electrode.

Abstract: Methods for setting a resistance include applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device. The memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material.

Abstract: An intelligent weightlifting apparatus includes a frame including vertically oriented members and safety rails that are selectively moveable up and down relative to the vertically oriented members. The apparatus includes a position sensor that is configured to detect a position of a barbell. The apparatus includes a computer that is configured to control movement of the safety rails based on data from the position sensor such that a predefined distance is maintained between the safety rails and the barbell during a free weight exercise.

Abstract: A memory, system, and method to improve integration density while maintaining thermal efficiency through a phase change memory cell with a superlattice based thermal barrier. The phase change memory may include a bottom electrode. The phase change memory may also include an active phase change material. The phase change memory may also include a superlattice thermal barrier proximately connected to the active phase change material. The phase change memory may also include a top electrode proximately connected to the superlattice thermal barrier. The system may include the phase change memory cell. The method for forming a phase change memory may include depositing an active phase change material on a bottom electrode. The method may also include depositing a superlattice thermal barrier proximately connected to the active phase change material. The method may also include depositing a top electrode proximately connected to the superlattice thermal barrier.

Abstract: A phase change memory device that includes a composite phase change material layer comprising a mixture of a dispersed phase of a projection material of a first resistivity, and a matrix of a phase-change material of a second resistivity or third resistivity dependent on phase. The first resistivity of the projection material has a resistance that is greater than the second resistance for the phase change material, and is less than the third resistance of the phase change material. The phase change memory device further includes a first electrode; and a second electrode on opposing faces of the composite phase change material layer. The projection material forms a percolated conducting path from the first electrode to the second electrode.

Abstract: According to one embodiment, a method, computer system, and computer program product for selective GPS navigation is provided. The embodiment may include determining a type of a vehicle operated by a user. The embodiment may also include, in response to determining a segment of a navigational route being traversed by the vehicle prohibits the type or is obstructed, presenting a notification to the user of the prohibition or the obstruction through a graphical user interface associated with a device dictating the navigational route. The embodiment may further include calculating a reroute that avoids the prohibition and/or the obstruction. The embodiment may also include presenting the reroute to the user.

Abstract: A semiconductor structure having two different trench isolation structures is provided. The first trench isolation structure is located in a space between each neighboring pair of first conductivity type field effect transistors (FETs) and between each neighboring pair of second conductivity type FETs. The second trench isolation structure is located in a space between each neighboring pair of first conductivity type FETs and second conductivity type FETs. The first and second trench isolations structures are designed to have different widths and contain compositionally different trench dielectric materials.

Abstract: A method, computer program product, and computer system are provided for selective light dimming through a transparent surface. An orientation of a user is monitored through one or more haptic and visual sensors. Data from a camera system corresponding to a direction and an intensity of an incoming visual source, such as a light source or visual image impingement on the user, is received. One or more light-dimming panels are identified from among a plurality of light-dimming panels to activate based on the direction and the intensity of the incoming visual source, the orientation of the user, and a user profile. An amount of light enabled to pass through the one or more identified light-dimming panels is adjusted. A transparent display between the user and the light-dimming panels is configured to augment dimmed portions of the display.

Abstract: A phase change memory, a system, and a method to prevent high resistance drift within a phase change memory through a phase change memory cell with three terminals and self-aligned metal contacts. The phase change memory may include a bottom electrode. The phase change memory may also include a heater proximately connected to the bottom electrode. The phase change memory may also include a phase change material proximately connected to the heater. The phase change memory may also include metal proximately connected to at least two sides of the phase change material. The phase change memory may also include three terminals, where a bottom terminal is located at an area proximately connected to the heater and two top terminals are located at areas proximately connected to the metal.

Abstract: A method and related system selectively dims a proper subset of a plurality of tiles (DTPTs) that are a part of a contiguous dimmable transparent panel (DTP). Using a processor and in a real-time continuous feedback loop, the method comprises detecting, using a light source detector with an outward facing sensor, a location of an illumination source within a volume adjacent to an outside surface of the DTP. The method further comprises determining, using a head/eye detector with an inward facing sensor, a viewer's gaze direction within a volume adjacent to an inside surface of the DTP. The method further comprises determining a panel intersection point for a light ray extending from the illumination source location along the viewer's gaze direction. Finally, the method comprises selectively dimming the proper subset of DTPTs proximate the panel intersection point.

Abstract: According to one embodiment, a method, computer system, and computer program product for wrong way driving detection is provided. The embodiment may include monitoring indications of wrong way traversal along a traversal path through one or more on-board, Internet of Things (IOT) sensors. The embodiment may also include determining whether wrong way traversal of the traversal path is occurring based on a risk assessment value satisfying a preconfigured threshold. The embodiment may further include, in response to determining the risk assessment value satisfies the preconfigured threshold, performing a corrective action to ameliorate the wrong way traversal.

Abstract: Embodiments of present invention provide a vertical magnetic tunnel junction (MTJ) structure. The structure includes an L-shaped MTJ stack including an L-shaped reference layer conformally on an L-shaped performance enhancing layer; an L-shaped tunnel barrier layer conformally on the L-shaped reference layer; and an L-shaped free layer conformally on the L-shaped tunnel barrier layer, where a vertical portion of the L-shaped MTJ stack is adjacent to a sidewall of a metal stud, the metal stud being directly on top of a metal wire in a dielectric layer. The structure further includes a first and a second electrode contacting a horizontal portion and a vertical portion of the L-shaped MTJ stack. A method of forming the same is also provided.

Abstract: An electrical device includes a first electrode in series with a second electrode. A phase change memory (PCM) is in series with the second electrode. A variable electrical element is in series with the phase change memory.

Abstract: A computer memory device includes a bottom electrode, a top electrode, and a memory component arranged between the top electrode and the bottom electrode. The memory component is made of a dielectric solid-state material and is in direct contact with the top electrode and the bottom electrode. The computer memory device further includes a proximity heater configured to increase a temperature of a portion of the memory component. The computer memory device further includes a layer of dielectric material in direct contact with the proximity heater. The layer of dielectric material is in direct contact with one of the bottom electrode and the top electrode.

Abstract: A semiconductor structure includes a first electrode; a second electrode; a dielectric material between the first electrode and the second electrode, the dielectric material having at least one wall extending from the first electrode to the second electrode to define a void within the dielectric material and between the first electrode and the second electrode; and a layer of phase change material on the at least one wall of the dielectric material and in contact with the first electrode and the second electrode.

Abstract: Insulated phase change memory devices are provided that include a first electrode; a second electrode; a phase change material disposed in an electrical path between the first electrode and the second electrode; and a porous dielectric configured to concentrate heat produced by a reset current carried through the phase change material between the first electrode and the second electrode to mitigate an amount of heat that escapes from the phase change material. The porous dielectric may be an inherently porous dielectric material or a dielectric material in which porous structures are induced during fabrication. Methods of fabrication of such devices are also provided.

Abstract: A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.