Abstract: A phase change memory device is provided. The phase change memory device includes a phase change memory material within an electrically insulating wall, a first heater terminal in the electrically insulating wall, and two read terminals in the electrically insulating wall.

Abstract: A multiterminal non-volatile memory cross-bar array system includes a set of conductive row rails, a set of conductive column rails configured to form a plurality of crosspoints at intersections between the conductive rails and the conductive column rails and a resistive processing unit at each of the crosspoints each representing a neuron in a neural network. At least one given conductive row rail includes first and second row lines is in contact with a given resistive processing unit. At least one given conductive column rail including first and second column lines is in contact with the given resistive processing unit.

Abstract: A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.

Abstract: A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode over a substrate, constructing a PCM stack including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode, and forming a top electrode over the PCM stack. The crystallization temperature varies in an ascending order from the bottom electrode to the top electrode.

Abstract: Methods for setting a resistance include applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device. The memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material.

Abstract: Low temperature techniques for forming layered lithium cobalt oxide (LCO) are provided. In one aspect, a method of synthesizing layered LCO includes: forming a metal catalyst layer (e.g., platinum) on a substrate; depositing LCO onto the metal catalyst layer; and annealing the LCO under conditions sufficient to form the layered LCO on the metal catalyst layer. An adhesion layer can be deposited on the substrate, and the metal catalyst layer can be deposited onto the adhesion layer. In another aspect, a structure is provided including: a substrate; a metal catalyst layer (e.g., platinum) disposed on the substrate; and layered LCO formed on the metal catalyst layer. An adhesion layer can be disposed between the substrate and the metal catalyst layer.

Abstract: Memristive devices and methods for setting the resistance of a memristive device include a first mixed conducting layer formed from a first material having a resistance that changes depending on an ion concentration and having multiple coexisting phases from concentration-dependent metastability. A second metastable, mixed conducting layer is formed from the first material. A barrier layer between the first conductor layer and the second conductor layer is formed from a second mixed conducting material having a chemical potential that prevents thermal ion diffusion between the first and second layer. The barrier layer provides an electrical threshold, above which ions are transferred between the first and second layer and below which the resistance of the device is read.

Abstract: A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.

Abstract: A controllable resistive element and method for updating the resistance of the same includes a state device configured to provide a voltage-controlled resistance responsive to a voltage input. A battery is configured to apply a voltage to the voltage input of the state device based on a charge stored in the battery. A write device is configured to charge the battery responsive to a write signal. An erase device is configured to discharge the battery responsive to an erase signal.

Abstract: A method for updating the resistance of a controllable resistance element includes determining an amount of resistance change for the controllable resistive element. A charge difference for a battery is determined corresponding to the resistance change for the controllable resistive element. The battery is charged or discharged to effect the resistance change in the controllable resistive element.

Abstract: A cohort associated with a user is identified. A virtual object is generated according to the cohort. An augmented reality setting of a location is generated in relation to the user. A context of the location is determined. The virtual object is modified in the augmented reality setting according to the context and the cohort.

Abstract: A computer implemented method, system and computer program product for a receptionist function in vehicles for communications management, such as phone call and texting management, includes determining driving context of a moving vehicle, estimating a risk factor related to the operation of the vehicle based on the driving context, receiving an incoming communication directed to a mobile communication device within the vehicle, analyzing the incoming communication to determine a communication factor representing an assessment of the incoming communication, and determining an electronic action in response to the incoming communication based on the driving context, the risk factor and the communication factor.

Abstract: A method is presented for reducing a reset current for a phase change memory (PCM). The method includes forming a bottom electrode, constructing a PCM cell structure including a plurality of phase change memory layers and a plurality of heat transfer layers, wherein the plurality of phase change memory layers are assembled in an alternating configuration with respect to the plurality of heat transfer layers, and forming a top electrode over the PCM cell structure. The plurality of phase change memory layers are arranged perpendicular to the top and bottom electrodes. Additionally, airgaps are defined adjacent the PCM cell structure.

Abstract: A method is presented for constructing a three-dimensional (3D) stack phase change memory (PCM) device. The method includes forming a plurality of stack layers over a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD), forming isolation trenches extending through the plurality of stack layers, etching the plurality of stack layers to define an opening, filling the opening with at least a phase change material, and constructing vias to the plurality of conductive lines.

Abstract: Low-voltage rechargeable microbatteries having a vanadium-based cathode are provided. In one aspect, a method of forming a battery is provided. The method includes the steps of: forming a first contact on a substrate; forming a cathode on the first contact, wherein the cathode is formed from a vanadium-containing material; forming a solid electrolyte on the cathode; forming an anode on the solid electrolyte; and forming a second contact on the anode. A battery having a vanadium-based cathode is also provided.

Abstract: A method is presented for constructing a three-dimensional (3D) stack phase change memory (PCM) device. The method includes forming a plurality of stack layers over a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD), forming isolation trenches extending through the plurality of stack layers, etching the plurality of stack layers to define an opening, filling the opening with at least a phase change material, and constructing vias to the plurality of conductive lines.

Abstract: A lithium rechargeable lithium battery including a conductive substrate, a cathode material layer disposed over the conductive substrate, a solid electrolyte material layer disposed over the cathode material layer, an anode material layer disposed over the solid electrolyte material layer, and a conductive layer disposed over the anode material layer.

Abstract: A computer-implemented method includes detecting initiation of submission of content on a forum. Using a computer processor, an expertise associated with the content is determined. Using the computer processor, challenge data is determined based at least in part on the expertise. Using the computer processor, expected response data corresponding to the challenge data is determined. The challenge data is presented. An entered response is received in reply to the challenge data. The content is allowed to be posted on the forum based at least in part on comparing the entered response data to the expected response data.

Abstract: A method of forming a phase change memory device is provided. The method includes depositing an electrode layer on a phase change material core, and forming a sacrificial layer on the electrode layer. The method further includes depositing a planarization layer on the sacrificial layer, and depositing an anti-reflective coating on the planarization layer. The method further includes forming a template on the anti-reflective coating, and removing a portion of the anti-reflective coating, a portion of the planarization layer, and a portion of the sacrificial layer to form a reduced height sacrificial layer and a sacrificial layer section beneath the planarization layer section. The method further includes removing the anti-reflective coating section and planarization layer section to expose the sacrificial layer section, and removing the reduced height sacrificial layer and a portion of the electrode layer to form a top electrode on the phase change material core.

Abstract: A computer implemented method, system and computer program product for a receptionist function in vehicles for communications management, such as phone call and texting management, includes determining driving context of a moving vehicle, estimating a risk factor related to the operation of the vehicle based on the driving context, receiving an incoming communication directed to a mobile communication device within the vehicle, analyzing the incoming communication to determine a communication factor representing an assessment of the incoming communication, and determining an electronic action in response to the incoming communication based on the driving context, the risk factor and the communication factor.