Abstract: A method steers a self-driving vehicle (SDV) onto a particular tire path on a roadway based on what type of tires are on the SDV. The method determines a pattern of tire path usage by vehicles on a roadway, and a type of tire upon which the SDV is riding. The method then directs an on-board computer on the SDV to drive the SDV on at least one specific tire path on the roadway based on the pattern of tire path usage by the vehicles on the roadway and the type of tire upon which the SDV is riding.

Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.

Abstract: In a computer-implemented method embodiment of the present invention, a self-driving vehicle (SDV) is steered onto a particular tire path on a roadway based on past taken tire paths. One or more processors determine a pattern of tire path usage by vehicles on a roadway. Based on this previous tire path usage, the processor(s) direct an SDV on-board computer on an SDV to pick at least one second tire path for the SDV to drive thereon based on the pattern of tire path usage by the vehicles on the roadway.

Abstract: A method for manufacturing a semiconductor device includes forming a memory element in a dielectric layer. A first conductive layer is deposited on the dielectric layer and the memory element by atomic layer deposition, and a second conductive layer is deposited on the first conductive layer by physical vapor deposition. In the method, the first and second conductive layers are patterned into an electrode on the memory element.

Abstract: A semiconductor device includes a first type nanosheet device having a first plurality of nanosheet portions alternately stacked with a first plurality of work function metal layers on a substrate, and a second type nanosheet device having a second plurality of nanosheet portions alternately stacked with a second plurality of work function metal layers on the substrate. The second type nanosheet device is spaced apart from the first type nanosheet device. The semiconductor device also includes a dielectric layer disposed in the space between the first and second type nanosheet devices. The first and second plurality of work function metal layers are directly disposed on the dielectric layer, and bottom surfaces of the directly disposed first and second plurality of work function metal layers are co-planar with each other.

Abstract: A computer implemented method, system and computer program product for a receptionist function in vehicles for communications management, such as phone call and texting management, includes determining driving context of a moving vehicle, estimating a risk factor related to the operation of the vehicle based on the driving context, receiving an incoming communication directed to a mobile communication device within the vehicle, analyzing the incoming communication to determine a communication factor representing an assessment of the incoming communication, and determining an electronic action in response to the incoming communication based on the driving context, the risk factor and the communication factor.

Abstract: A cohort associated with a user is identified. A virtual object is generated according to the cohort. An augmented reality setting of a location is generated in relation to the user. A context of the location is determined. The virtual object is modified in the augmented reality setting according to the context and the cohort.

Abstract: A semiconductor device includes a first type nanosheet device having a first plurality of nanosheet portions alternately stacked with a first plurality of work function metal layers on a substrate, and a second type nanosheet device having a second plurality of nanosheet portions alternately stacked with a second plurality of work function metal layers on the substrate. The second type nanosheet device is spaced apart from the first type nanosheet device. The semiconductor device also includes a dielectric layer disposed in the space between the first and second type nanosheet devices. The first and second plurality of work function metal layers are directly disposed on the dielectric layer, and bottom surfaces of the directly disposed first and second plurality of work function metal layers are co-planar with each other.

Abstract: Techniques regarding protecting a dielectric material during additive patterning of one or more phase change memories are provided. For example, one or more embodiments described herein can comprise a method, which can comprise forming a bi-layer adjacent a phase change memory element. The bi-layer can comprise a dielectric material and a capping material that can protect a thickness of the dielectric material during a patterning process.

Abstract: Techniques regarding protecting a dielectric material during additive patterning of one or more phase change memories are provided. For example, one or more embodiments described herein can comprise a method, which can comprise forming a bi-layer adjacent a phase change memory element. The bi-layer can comprise a dielectric material and a capping material that can protect a thickness of the dielectric material during a patterning process.

Abstract: A cohort associated with a user is identified. A virtual object is generated according to the cohort. An augmented reality setting of a location is generated in relation to the user. A context of the location is determined. The virtual object is modified in the augmented reality setting according to the context and the cohort.

Abstract: Low-voltage rechargeable microbatteries having a vanadium-based cathode are provided. In one aspect, a method of forming a battery is provided. The method includes the steps of: forming a first contact on a substrate; forming a cathode on the first contact, wherein the cathode is formed from a vanadium-containing material; forming a solid electrolyte on the cathode; forming an anode on the solid electrolyte; and forming a second contact on the anode. A battery having a vanadium-based cathode is also provided.

Abstract: Low-voltage rechargeable microbatteries are provided. In one aspect, a method of forming a microbattery includes: forming a cathode on a substrate, wherein the cathode includes a lithium intercalated material; forming a solid electrolyte on the cathode; forming an anode on the solid electrolyte; and forming a negative contact on the anode. A microbattery is also provided.

Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.

Abstract: Memristive devices based on tunable Schottky barrier are provided. In one aspect, a method of forming a memristive device includes: forming a semiconductor layer on a bottom metal electrode, wherein the semiconductor layer has workfunction-modifying molecules embedded therein; and forming a top metal electrode on the semiconductor layer, wherein the top metal electrode forms a Schottky junction with the semiconductor layer, and wherein the workfunction-modifying molecules are configured to alter a workfunction of the top metal electrode. A memristive device and a method for operating a memristive device are also provided.

Abstract: A cohort associated with a user is identified. A virtual object is generated according to the cohort. An augmented reality setting of a location is generated in relation to the user. A context of the location is determined. The virtual object is modified in the augmented reality setting according to the context and the cohort.

Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.

Abstract: Embodiments of the invention are directed to a computer-implemented method for monitoring game activity of a game system. A non-limiting example of the method includes monitoring, by a processing device, game activity of the game system. The processing device determines characteristics of the game activity, along with expected characteristics of the game activity. The processing device analyzes the characteristics of the game activity and the expected characteristics of the game activity. Based at least in part on analyzing the characteristics of the game activity and the expected characteristics of the game activity, an entity that is controlling the game system is determined.

Abstract: Embodiments of the invention are directed to a computer-implemented method for monitoring game activity of a game system. A non-limiting example of the method includes monitoring, by a processing device, game activity of the game system. The processing device determines characteristics of the game activity, along with expected characteristics of the game activity. The processing device analyzes the characteristics of the game activity and the expected characteristics of the game activity. Based at least in part on analyzing the characteristics of the game activity and the expected characteristics of the game activity, an entity that is controlling the game system is determined.

Abstract: Memristive devices based on ion-transfer between two meta-stable phases in an ion intercalated material are provided. In one aspect, a memristive device is provided. The memristive device includes: a first inert metal contact; a layer of a phase separated material disposed on the first inert metal contact, wherein the phase separated material includes interstitial ions; and a second inert metal contact disposed on the layer of the phase separated material. The first phase of the phase separated material can have a different concentration of the interstitial ions from the second phase of the phase separated material such that the first phase of the phase separated material has a different electrical conductivity from the second phase of the phase separated material. A method for operating the present memristive device is also provided.