Abstract: An illuminator has phase scrambling particles to reduce speckle.

Abstract: Embodiments related to emissive display device structures having an emissive display element and a metamaterial lens having a plurality of nanoparticles over an emissive surface of the emissive display element to control the angular distribution of light emitted from the emissive display element, displays having such controlled emissive display device structures, systems incorporating such controlled emissive display device structures, and methods for fabricating them are discussed.

Abstract: A display device includes light-emitting diode (LED) devices to implement an array of pixels, where pixels in the array are each associated with a respective first set of LED devices to implement a first set of sub-pixels and a respective second set of LED devices to implement a redundant second set of sub-pixels for the corresponding pixel. Controller circuitry is provided to alternatively enable the first set of LED devices or the second set of LED device to implement the sub-pixels of the corresponding pixel.

Abstract: A micro-light emitting diode (LED) display and a method of fabricating the same. The method includes aligning a display backplane and a source semiconductor wafer with one another. A plurality of backplane contact pads of a first width are fixed to the backplane and include first solder pads thereon with a second width smaller than the first width. The wafer includes thereon a plurality of micro-LEDs, and a plurality of micro-LED contact pads fixed to the micro-LEDs and having a third width smaller than the first width. The method includes: aligning such that at least some of the micro-LED contact pads register with corresponding first solder pads; releasing at least some of the micro-LEDs from the wafer onto corresponding first solder pads; and forming a plurality of second solder pads by melting the corresponding first solder pads.

Abstract: A micro-light emitting diode (LED) pixel element and a method of fabricating the same. The pixel element includes a mask layer and a N-type core partially in an opening of the mask layer; a quantum well structure on the N-type core including at least one quantum well, each quantum well including an active layer, and at least two barrier layers including a first barrier layer and a second barrier layer, and a P-cladding layer on the quantum well structure. The active layer includes at least one of AlInN, InGaN, InGaNY or InGaNSc.

Abstract: A thin film transistor (TFT) to control a light emitting diode (LED) or an organic light emitting diode (OLED) includes a channel region configured as a saddle channel extending between the drain region and the source region of the TFT. The saddle channel is formed by deposition of channel material on a fin structure, and the contour of the saddle channel is defined by the contour of the fin structure. Deposition of the channel material for the saddle channel may be performed by: (i) atomic layer deposition (ALD) of amorphous silicon; (ii) ALD of amorphous silicon followed by annealing to form polycrystalline silicon; or (iii) deposition of indium gallium zinc oxide (IGZO) material by one of ALD, plasma-enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), or plasma-enhanced chemical vapor deposition (PECVD).

Abstract: Per-pixel performance is improved in a combined visible and ultraviolet image sensor array such as for a hyperspectral camera. In one example, an array of photodetectors is formed on a silicon substrate. A subset of the photodetectors are improved to improve sensitivity to ultraviolet light, and the photodetector array is finished to form an image sensor.

Abstract: A laser source for use in a structured light projector includes a substrate, one or more first VCSELs on the substrate, and one or more second VCSELs on the substrate. The one or more first VCSELs each have a first aperture width and each separately extend above a surface of the substrate. The one or more second VCSELs each have a second aperture width different from the first aperture width, and each separately extend above a surface of the substrate. Using an array of VCSELs with different aperture widths provides emitted radiation having different wavelengths, thus providing different speckle patterns. When the different speckle patterns are averaged upon being received at the detector, speckle noise is reduced. The VCSEL can also include a plurality of subwavelength structures to steer the light output. Such subwavelength structures can also be used on the surface of other VCSELs, including standard VCSELs.

Abstract: A high gain non-mechanical steerable beamforming antenna is provided together with a system implementing the antenna. The steerable beamforming antenna uses a reflectarray structure in conjunction with a phased array antenna element configuration. The antenna elements may include micro particle arrays (MPAs), having a number of micro particles disposed thereon. The micro particles may be implemented as graphene elements or as plasmonic elements having a sufficiently high electron mobility and an electron carrier density that is controlled as a function of an applied electronic tuning signal. The change in electron carrier density of the MPA elements, in turn, causes a phase change in incident waves provided by a source feed, facilitating steering of a main beam of an antenna pattern associated with the reflected incident waves.

Abstract: A display panel with reduced power consumption is described. An example of the display panel includes an array of light emitting elements that are controllable to form an image, and a Thin-Film-Transistor (TFT) backplane comprising circuitry to drive the array of light emitting elements. The TFT backplane includes a plurality of field effect transistors (FETs). Each FET includes a source electrode, a drain electrode, a channel layer contacting the source electrode and the drain electrode, and a gate electrode adjacent to the channel layer and separated from the channel layer by an insulator. The channel layer includes a layer of metal phosphide.

Abstract: Micro light-emitting diode display fabrication processes and assembly apparatuses are described. In an example, a micro light emitting diode pixel structure includes a backplane including a glass substrate having an insulating layer disposed thereon, and a pixel thin film transistor circuit disposed in and on the insulating layer, the pixel thin film transistor circuit including a gate electrode and a channel. The micro light emitting diode pixel structure also includes a front plane including a metal pad coupled to the pixel thin film transistor circuit of the backplane, a micro light emitting diode device bonded to the metal pad, a spacer adjacent sidewalls of the micro light emitting diode, the spacer including a high refractive index material, and an insulating layer surrounding the spacer.

Abstract: Disclosed herein are display and photonic devices utilizing metasurfaces. An optical device comprising an optical component and an optical transmission medium is disclosed. A waveguide couples the optical component and the optical transmission medium. A metasurface is disposed on an end of the waveguide and arranged to increase an optical coupling between the waveguide and the optical transmission medium. Additionally, a display comprising a number of light emitting elements and a metasurface for each of the light emitting elements. The metasurface arranged to eliminate screen door effect in virtual reality display systems.

Abstract: Substrates, assemblies, and techniques for enabling a p-channel oxide semiconductor. For example, some embodiments can include an oxide semiconductor, where the oxide semiconductor includes an indium gallium zinc oxide (IGZO) sulfur alloy as a semiconducting material. The semiconducting material can be included in a thin-film-transistor that includes one or more p-channels.

Abstract: A micro display, which includes LEDs and TFTs of a TFT electronic control circuit for controlling the LEDs, is produced monolithically on a silicon, silicon carbide, or sapphire wafer. The display includes red, green, and blue micro LEDs, and electronic control circuits include TFTs with Indium gallium zinc oxide (IGZO) channels or Indium phosphide (InP) channels. The TFTs are formed above the LEDs and laterally removed from the LEDs and paths of light emissions from the plurality of LEDs to prevent light blocking by the TFTs.

Abstract: A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

Abstract: Embodiments disclosed herein include 3D displays with meta-surfaces and methods of forming such displays. In an embodiment, a display may comprise a display backplane substrate, and a light emission source on the display backplane substrate. In an embodiment, a meta-surface may be formed over the light emission source. In an embodiment, the meta-surface comprises a plurality of nano-features for modifying a path of light emitted by the light emission source.

Abstract: Methods and apparatus for in-pixel driving of micro-light-emitting diodes are disclosed. An example light-emitting diode driver includes a first input node to receive a data signal, a second input node to receive a reference signal having a first frequency, and a driver circuit including thin-film transistors to output a current pulse for driving a light-emitting diode, the current pulse having a width based on the data signal and the reference signal, the output signal having a second frequency that is greater than the first frequency.

Abstract: Micro-LED structures for full color displays and methods of manufacturing the same are disclosed. An apparatus for a micro-LED display includes a first portion of a nanorod and a second portion of the nanorod. The first and second portions including gallium and nitrogen. The apparatus includes a polarization inversion layer between the first portion and the second portion. The apparatus includes a cap at an end of the nanorod. The cap including a core and an active layer. The core including gallium and nitrogen. The active layer including indium.

Abstract: Apparatus, systems, methods, and articles of manufacture to generate, trap, and convert light using a micro light emitting diode (LED) or similar device are disclosed. An example apparatus includes a first mirror to reflect a first wavelength light and a second wavelength light. The example apparatus includes a micro LED on the first mirror, the micro LED to generate the first wavelength light. The example apparatus includes a quantum dot film on the micro LED, the quantum dot film to convert the first wavelength light to the second wavelength light. The example apparatus includes a second mirror on the quantum dot film, the second mirror to reflect the first wavelength light and transmit the second wavelength light.

Abstract: Embodiments disclosed herein include micro light emitting device (LED) display panels and methods of forming such devices. In an embodiment, a display panel includes a display backplane substrate, a light emitting element on the display backplane, a transparent conductor over the light emitting element, a dielectric layer over the transparent conductor, and a color conversion device over the light emitting element. In an embodiment, the dielectric layer separates the transparent conductor from the color conversion device.