Abstract: The present specification relates to a decorative member comprising a base and inorganic layers comprising a first light absorption layer, a light reflection layer, and a second light absorption layer sequentially provided on the base, in which ?E12 indicated in Equation 1 is 1 or more, and a method of manufacturing the decorative member.

Abstract: A display device includes: a first base on which a display area and a non-display area are defined; a light-emitting element on the first base and in the display area; a second base facing the first base and above the light-emitting element; a color filter on a surface of the second base that faces the first base and overlapping the light-emitting element; a wavelength conversion pattern on the color filter; a sealing member in the non-display area between the first base and the second base; and a sink pattern in the non-display area, wherein the sink pattern is between the sealing member and the display area when viewed from a plan view.

Abstract: A semiconductor device including a substrate having an insulating pattern, a channel pattern disposed on the insulating pattern a source/drain pattern disposed adjacent to the plurality of semiconductor patterns, a gate electrode disposed on the plurality of semiconductor patterns, a lower power line disposed in a lower portion of the substrate, a lower insulating pattern disposed between the source/drain pattern and the insulating pattern, a backside active contact disposed below the source/drain pattern, and a backside silicide pattern disposed between the source/drain pattern and the backside active contact. In one aspect, the backside active contact penetrates the substrate and the lower insulating pattern and is electrically connects the lower power line and the source/drain pattern. In one aspect, the backside active contact and the backside silicide pattern are vertically overlapped with the doping layer.

Abstract: A catalyst for manufacturing carbon nanotubes includes a support, a first active layer formed on a surface of the support, and a second active layer formed on a surface of the first active layer, wherein the first active layer includes cobalt oxide and the second active layer includes aluminum oxide. A method for manufacturing carbon nanotubes is also described, using the catalyst. The catalyst of the present invention enables more uniform and efficient synthesis of small-diameter carbon nanotubes.

Abstract: A display device includes: an active layer disposed on a substrate; a gate electrode disposed on the active layer to overlap the active layer and define a channel region of the active layer; a pixel electrode disposed on the gate electrode; a light emitting layer disposed on the pixel electrode; and a common electrode disposed on the light emitting layer. In the channel region having a channel length in a first direction, at least one side of the channel region that defines the channel length has a diagonal shape or a curved shape such that the channel length varies along a second direction intersecting the first direction.

Abstract: The present application relates to an electrode comprising a current collector and an active material layer, which can provide an electrode capable of securing a high level of adhesion force between particles and adhesion force between the active material layer and the current collector relative to the content of binder in the active material layer. The present application can also provide a use of the electrode.

Abstract: The present application relates to a decorative member including a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer, wherein the light absorbing layer includes a copper oxide (CuaOx).

Abstract: Provided are a computerized image interpretation method and a device for analyzing a medical image. The image interpretation method may include receiving, at a processor, a medical image, and receiving report information including a healthcare worker's judgement result of the medical image. The method may also include generating, at the processor, result information representing correspondence between first lesion information, which is related to a lesion in the medical image acquired on the basis of the medical image, and second lesion information, which is related to a lesion in the medical image acquired on the basis of the report information, by applying the first lesion information and the second lesion information to a third analysis model. The method may further include outputting, at the processor, the result information.

Abstract: A printed circuit board includes a substrate with first through-portion; a magnetic layer disposed in at least a portion of the first through-portion and having a second through-portion; an electronic component having at least a portion disposed in the second through-portion; a first wiring pattern disposed on an upper surface of the magnetic layer; a second wiring pattern disposed on a lower surface of the magnetic layer; and a first through-via having at least a portion surrounded by the magnetic layer, and including a first via pattern connecting the first and second wiring patterns to each other.

Abstract: A display device including a light-emitting element, and a first transistor connected between a driving voltage line and the light-emitting element, the first transistor including a first gate electrode and a second gate electrode that face each other, and an active layer between the first gate electrode and the second gate electrode. The display device further includes a first data line connected to the first gate electrode of the first transistor, a second data line connected to the second gate electrode of the first transistor, and a data driver connected to the first data line and the second data line. The data driver applies a first data voltage to the first data line and applies a second data voltage having a different magnitude from the first data voltage to the second data line. The magnitude of the second data voltage varies depending on the magnitude of the first data voltage.

Abstract: A semiconductor includes an active pattern with a lower pattern and sheet patterns spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern, the source/drain pattern being in contact with the sheet patterns, and gate structures on opposite sides of the source/drain pattern, the gate structures being spaced apart from each other along a second direction and including gate electrodes that surround the sheet patterns, wherein the source/drain pattern includes a first epitaxial region having at least one of antimony and bismuth, the first epitaxial region having a bottom part in contact with the lower pattern, but not with the sheet patterns, and a thickness of the bottom part increasing and decreasing away from the gate structures in the second direction, and a second epitaxial region on the first epitaxial region, the second epitaxial region including phosphorus.

Abstract: The present disclosure relates to a printed circuit board including: a first insulating layer; a first wiring layer disposed on the first insulating layer; a second wiring layer disposed on the first insulating layer; a second insulating layer disposed on the first insulating layer; a third wiring layer disposed on the second insulating layer; a first cavity penetrating through at least a portion of the first insulating layer; and a second cavity penetrating through at least a portion of the second insulating layer and connected to the first cavity. The first and second cavities have different wall surface inclinations, and a depth of the first cavity is smaller than a thickness of the first insulating layer and is greater than a thickness of each of the first and second wiring layers.

Abstract: The present disclosure relates to a printed circuit board including: a glass layer; a plurality of blind cavities respectively penetrating through a portion of the glass layer from an upper surface or a lower surface of the glass layer; a plurality of passive elements respectively disposed in the plurality of blind cavities; and an insulating layer covering at least a portion of each of the glass layer and the plurality of passive elements and disposed in at least a portion of each of the plurality of blind cavities. At least two of the plurality of blind cavities have different depths.

Abstract: A positive electrode includes a positive electrode active material, wherein the present invention relates to a positive electrode, in which adhesion between a positive electrode active material layer and a collector is excellent by controlling distribution of a binder in the positive electrode active material layer, and a lithium secondary battery including the same.

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a first semiconductor pattern, a second semiconductor pattern, and a third semiconductor pattern sequentially stacked and vertically spaced apart, a source/drain pattern on the active pattern, and a gate electrode on the first semiconductor pattern, the second semiconductor pattern, and the third semiconductor pattern, where the source/drain pattern includes a buffer layer and a main layer on the buffer layer, the main layer includes silicon that is doped with an impurity, an impurity concentration of the main layer is a first atomic fraction at a first level corresponding to the first semiconductor pattern, and the impurity concentration of the main layer is a second atomic fraction at a second level corresponding to the second semiconductor pattern.

Abstract: A semiconductor device includes a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern wherein the channel pattern includes semiconductor patterns vertically stacked and spaced apart from each other, the plurality of semiconductor patterns including a first semiconductor pattern and a neighboring second semiconductor pattern, and a gate electrode on the semiconductor patterns. The gate electrode includes an inner electrode between the first and second semiconductor patterns. The source/drain pattern includes a buffer layer and a main layer on the buffer layer. An indent region is defined in a vertical cross section of the device by the main layer, the first and second semiconductor patterns, and the inner electrode. The buffer layer is in the indent region. The buffer layer does not extend onto sidewalls of the first and second semiconductor patterns.

Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.

Abstract: A positive electrode active material, a method of preparing the same, and a positive electrode and a lithium secondary battery including the same are provided. The positive electrode active material includes a particulate positive electrode active material and a coating layer formed on a surface of the particulate positive electrode active material, the coating layer including a phosphorus (P)-doped aluminum oxide, and the coating layer having a thickness of 0.1 nm to 2.0 nm.

Abstract: A semiconductor device and a method for making a semiconductor device. The semiconductor device includes an active region on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers and including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically.

Abstract: The present application relates to an electrode comprising a current collector and an active material layer, which can provide an electrode capable of securing high levels of inter-particle adhesion force and adhesion force between the active material layer and the current collector relative to the binder content in the active material layer. Through this, it is also possible to provide a secondary battery having excellent performance, and the like, while having a high capacity.