Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.

Abstract: A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the buffer layer that lie directly under the intrinsic regions of a part or all of the plurality of heterojunction bipolar transistors are removed. Thereby, a semiconductor device using HBTs that can operate with a power supply voltage of 2V or below can be provided at reduced cost as a well-reliable product, and a power amplifier with high power conversion efficiency can be provided.

Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control Voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

Abstract: The present invention provides a communication terminal that enables precise communications with optimum receive sensitivity at any time regardless of any change in peripheral environments of an antenna thereof. The communication terminal including means for transmitting and receiving radio waves is provided with a training mechanism for enabling the communication terminal itself to conduct training mode for tuning receive sensitivity, and switching mechanism for switching between normal communication mode and the training mode. The communication terminal is particularly useful as a communication terminal for automobile in the Intelligent Transport System or the like.

Abstract: In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Abstract: An apparatus is disclosed for injecting an expandable or foaming material in a closed sectional structure of a body. The apparatus is suitable for mass-producing vehicles, such as automobiles efficiently. This apparatus is provided with a manipulator (38) movable to a desired position, a injector (50) fixed to the manipulator, a device (56) for supplying the expandable or foaming material to the injector, and a controller (40) adapted to control the position of the manipulator (10) so that the injector is set in a position in which the foaming material can be supplied to the closed sectional structure of the vehicle body through an injection port of the same closed sectional structure, and also adapted to control the supply device so that the foaming material can be injected and filled in the closed sectional structure thereof by only such an amount that was set in accordance with the volume of the inside of the sectional structure.

Abstract: A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.

Abstract: An apparatus is disclosed for injecting an expandable or foaming material in a closed sectional structure of a body. The apparatus is suitable for mass-producing vehicles, such as automobiles efficiently. This apparatus is provided with a manipulator (38) movable to a desired position, a injector (50) fixed to the manipulator, a device (56) for supplying the expandable or foaming material to the injector, and a controller (40) adapted to control the position of the manipulator (10) so that the injector is set in a position in which the foaming material can be supplied to the closed sectional structure of the vehicle body through an injection port of the same closed sectional structure, and also adapted to control the supply device so that the foaming material can be injected and filled in the closed sectional structure thereof by only such an amount that was set in accordance with the volume of the inside of the sectional structure.

Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

Abstract: A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.

Abstract: A power amplifier module is provided with a function of protecting an amplifying device against destruction caused by a standing wave by reflection from an antenna end in load variation. Increase in base current from idling current of a final stage amplifying portion GaAs-HBT in load variation is detected and canceled and collector current is restrained to thereby prevent an increase in output and prevent destruction of GaAs-RET. By also using a function of successively lowering idling current when power source voltage is elevated and a clipping function of diodes connected in parallel with output stage GaAs-RET, voltage as well as current more than necessary are avoided from being applied on the output stage GaAs-RET.

Abstract: A mobile telecommunication apparatus includes an antenna, a receiving front end having an input end coupled to the antenna, a baseband-signal processing circuit coupled to an output end of the receiving front end, and a power amplifier module coupled at an output end to the antenna and coupled at an input end to the baseband-signal processing circuit. The power amplifier module includes a bias circuit to produce an idling current, and a power amplifier which has its gain controlled by the idling current. With this arrangement, effects of changes of control voltage and ambient temperature of the power amplifier module can be removed by a first detector in the bias circuit to detect changes of the control voltage and a second detector in said bias circuit to detect changes of the ambient temperature.

Abstract: A radio communication apparatus including at the transmitter-side output stage a high-frequency power amplifier module that has incorporated therein a single-stage amplifier using one multi-finger type heterojunction bipolar transistor (HBT) or a multi-stage amplifier using a plurality of HBTs sequentially connected in cascade, and at the output end an antenna connected to the high-frequency power amplifier module, wherein first capacitors and first resistors are inserted in series between the input terminal of the high-frequency power amplifier module and the control fingers of the HBT, and second resistors are inserted between the control terminal of the high-frequency power amplifier module and the control fingers of the HBT and connected to the nodes of the first resistors and the first capacitors.

Abstract: The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

Abstract: A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.

Abstract: A semiconductor device comprising a plurality of heterojunction bipolar transistors with their base layer made of GaAsSb or InGaAs, a GaAs substrate, and a buffer layer placed between the base layer and the substrate is fabricated. The substrate and the buffer layer that lie directly under the intrinsic regions of a part or all of the plurality of heterojunction bipolar transistors are removed. Thereby, a semiconductor device using HBTs that can operate with a power supply voltage of 2V or below can be provided at reduced cost as a well-reliable product, and a power amplifier with high power conversion efficiency can be provided.