Abstract: An internal electrode (14) is formed on the inner wall surface of a tube-shaped light emitting body (12) along the longitudinal direction of the light emitting tube (12). An external electrode (15) is formed on the exterior surface of the light emitting tube (12) along the longitudinal direction of the light emitting tube (12). An electric discharge starts between the internal electrode (14) and the external electrode (15) by applying a high-frequency voltage therebetween. Only one tube wall of the light emitting tube (12) lies between the internal electrode (14) and the external electrode (15), and the internal electrode (14) and the external electrode (15) can be brought close to each other. The limitation of an electric current running between the internal electrode (14) and the external electrode (15) can be reduced, and a starting voltage or a discharge-maintaining voltage can be lowered. In addition, the internal electrode (14) can be easily processed with high accuracy.

Abstract: A motor includes a cylindrical rotor having a magnet, a stator having a cylindrical inner peripheral surface opposing to an outer periphery of the rotor, an output shaft projecting from one axial end side of the stator, and a frame fixed to the one axial end side of the stator to pivotally support the output shaft at a distal end thereof. Holes having diameters identical to the inner diameter of the stator are formed in the frame for pivotally supporting the distal end of the output shaft and for fixing the stator. A positioning jig of a diameter slightly smaller than those of the holes are simultaneously inserted into a hole defining the inner peripheral surface of the stator and into the two holes in the frame, and the positioning jig are caused to abut against the inner peripheral surfaces of the holes to effect positioning.

Abstract: A screw shaft including a shaft base member having a hollow part at a shaft cantor part and an outer periphery part formed with a screw part. The hollow part is formed protruded to an inner side corresponding to recessed portions of the screw part.

Abstract: A motor includes a cylindrical rotor having a magnet, a stator having a cylindrical inner peripheral surface opposing to an outer periphery of the rotor, an output shaft projecting from one axial end side of the stator, and a frame fixed to the one axial end side of the stator to pivotally support the output shaft at a distal end thereof. Holes having diameters identical to the inner diameter of the stator are formed in the frame for pivotally supporting the distal end of the output shaft and for fixing the stator. A positioning jig of a diameter slightly smaller than those of the holes are simultaneously inserted into a hole defining the inner peripheral surface of the stator and into the two holes in the frame, and the positioning jig are caused to abut against the inner peripheral surfaces of the holes to effect positioning.

Abstract: There is provided a pointer type instrument which can reduce a light leakage to a side of a display board, and comprises a pointer 6 which includes an indication member 61 brightened by illumination light introduced from a back side of a rotation center region R and made of a translucent resin material, and a cover member 62 covering its outer periphery except for the back side of the rotation center region R and made of a light shielding resin material, and is driven to be rotated through a driving unit 2; a display board 3 which is disposed behind the pointer 6, is apart from the cover member 62 with a predetermined gap part S intervening, and includes a light passing part 33 corresponding to the rotation center region R; and a light source 5 disposed behind the display board 3, for generating the illumination light, wherein a leakage light prevention part 634 for suppressing a light leakage from the gap part S is provided on the back side (back side of a pedestal part 632) of the rotation center region R e

Abstract: It is an object of the present invention to provide a simulation apparatus capable of easily evaluating dynamic characteristics of a circuit including a ferroelectric device quantitatively. Means 30 and 32 calculate dynamic capacitance of a without-polarization reversal term, Cp, and a with-polarization reversal term, Cr, respectively, by differentiating the without-polarization reversal term fQp and the with-polarization reversal term fQr, respectively, representing simple saturation functions with the voltages applied to the ferroelectric part. Means 34 calculates dynamic capacitance Cd of the ferroelectric part by composing both the dynamic capacitance Cp and the dynamic capacitance Cr. Means 36 determines dynamic time constants &tgr; of the circuit including the ferroelectric part in accordance with the dynamic capacitance Cd. Means 38 determines both transient charge response q(t) and transient current response i(t) and the like in accordance with the time constants &tgr;.

Abstract: A control drive circuit or the like is provided that is capable of producing a drive output of a higher voltage than a drive power source voltage. A differential amplifier 39 that constitutes a differential amplifying section 14 generates a current Ia on the basis of a current I0 obtained with a constant current generating section 12 and signal waveforms Vina and Vinb inputted from a signal source S. Currents I2 and I4 are generated with a pre-drive section 16. The current I2 corresponds to part of the current Ia that is greater than 1/2·I0 and smaller than 3/4·I0. The current I4 corresponds to part of the current Ia that is greater than 3/4·I0. In other words, part of the current Ia that is greater than 1/2·I0 is divided at the threshold value of 3/4·I0 to obtain the currents I2 and I4. Different coils are driven on the basis of the currents I2 and I4.

Abstract: An object of the present invention is to provide a ferroelectric storage device which has long life in use. A switch-signal generating portion 40 automatically generates switch signals in predetermined timing. A reversal-of-polarity controlling portion 36 changes, on the switch signal, the polarity states of ferroelectric storage cells composing an information storage portion 30. After that the reversal-of-polarity controlling portion 36 further performs a certain number of write operations or read-out operations on said ferroelectric storage cell so as to further move the polarity state in the direction of the changed polarity. A gate controlling portion 38 gives a control-of-input-gate signal and a control-of-output-gate signal to an input gate portion 32 and an output gate portion 34, thereby changing states of their operations. Therefore, the polarity state can be changed if required with the same data being stored in the ferroelectric storage cell.

Abstract: It is an object to provide signal storing circuits and related devices capable of storing resulting data even when the power supply thereto is suspended, and to provide the signal storing circuit which consumes less power. A logic processing circuit 56 comprises a combined logic block CB and a latching block LT. The latching block LT includes a line 104 for passing the resulting data OUT outputted by the logic block CB. A circular signal path (feedback loop) including a line 106 and another line 108 overlaps a part of the line 104. An inverter circuit INV2 made of a ferroelectric transistor is provided to the line 108. In this way, the resulting data OUT existing on the line 104 can be stored in ferroelectrical manner and the data right before the shut-off of the power supply can be reproduced on the line 104 with the recovery of the power supply.

Abstract: It is an object of the present invention to provide a ferroelectric memory device including a load capacitor corresponding to an actual read-out time period appropriately and capable of reading out stored data in a high-speed as well as saving electric power consumption. An applying duration "t" (=2.5n seconds) which generates the maximum value of the differential voltage .DELTA.V of approximately 0.87V is selected when a voltage value corresponding the minimum detectable value of the sense amplifier AMP1 is 0.8V. Also, capacitance C of the load capacitor Cb is determined at the capacitance (.apprxeq.1.25 pF) which maximize the differential voltage .DELTA.V when the applying duration "t" is 2.5n seconds. Another applying duration "tp" (not shown) of read-out voltage Vp is set as 2.5n seconds the same as the applying duration of the voltage Vd for determining characteristics of a capacitor.

Abstract: An object of the present invention is to duplicate functions of a first device into a second device so as to have the same functions as the first device. CPU 23 supplies a predetermined input data to both the second device 19 and the first device 17. A plurality of logic data for generating output data correspond to specific input data are stored in the hard disk 26 as candidates. The CPU 23 selects a candidate which makes both the output data generated by the second device 19 and the first device 17 identical with each other for all the supplied input data within the candidates. The CPU 23 outputs a rewrite command to the second device 19 so as to execute logic data of the candidate thus selected. The output data of the second device 19 identical with the output data generated by the first device 17 can be obtained for all the supplied input data.

Abstract: A switch SW 11 comprises a ferroelectric memory 26 and an AND gate 28. A data input line L11 and an output terminal of the ferroelectric memory 26 are connected to an input terminal of the AND gate 28. Also, output terminal of the AND gate 28 is connected to an AND input line L21. In order to write the switching data which switches the state of the switch SW11 either in open state or closed state into the ferroelectric capacitor 26, ferroelectric capacitors C11 and C12 are polarized in opposite directions with each other. The polarization is carried out in short period, and the polarization state can be maintained even when the power is turned off. So that, the switching data can be written repeatedly by changing direction of the voltage applied to the ferroelectric capacitors C11 and C12.

Abstract: It is an object of the present invention to provide a data storing device capable of responding in high speed without providing a power supply just for maintaining the stored data. A memory cell MC11 is made so as to replace only a memory transistor MT1 out of a pair of memory transistors MT1 and MT2 used for the prior art SRAM with a transistor with "MFMIS structure" having a ferroelectric layer 32. The ferroelectric layer 32 keep storing a polarization state in response to ON state stored in the memory transistor MT1 even when a power supply of the device is turned off. The memory transistor MT1 is turned into ON state in accordance with the polarization state stored in the ferroelectric layer 32 when the power supply is turned on again. In response to the change in state at the memory transistor MT1, the memory transistor MT2 is turned into OFF state. That is, the memory cell MC11 is defined as a ferroelectric memory.

Abstract: A low-pressure mercury vapor-filled discharge lamp has a glass arc tube and a glass outer tube disposed coaxially with the arc tube forming a space therebetween. A gas is disposed in the space. The arc tube contains a gas and is coated with a phosphor. A first seal hermetically seals the inner tube. A second seal seals the inner tube to the outer tube. The inner tube further contains a pair of cathodes coupled to Dumet wires extending from the interior of the inner tube to the outside of the lamp structure. The pressure in the space is set at not more than 1 Pa, which is nearly high vacuum. The longer the radial dimension of the space, the greater the heat retaining capacity and the better the temperature characteristics which can be obtained. However, by setting the pressure of the space at 1 Pa or less, the optimum heat retaining capacity can be obtained while reducing the diameter of the low-pressure mercury vapor filled discharge lamp 1.

Abstract: An object of the present invention is to provide a semiconductor device having a ferroelectric capacitor wherein the ferroelectric capacitor is difficult to get bad electric property. In a capacitor unit CbU for load, a bridge circuit is made including a ferroelectric capacitor Cb for load, transistors Q1, Q2, Q3 and Q4. The both ends of the bridge circuit is connected with a bit line /BL1 and the ground G, respectively. A line SWS is connected with the gates of both transistors Q1 and Q3 and further is connected with the gate of both transistors Q2 and Q4 via an inverter 104. A switch-signal generating circuit 102 shifts the level of switch signal for the line SWS whenever the number of leading edges of the line GCP reaches a predetermined number. According the shifted switch signal, the direction of the capacitor Cb for load in its bridge circuit is changed. That can prevent the capacitor Cb for load from getting a bad electric property.

Abstract: A semiconductor memory device with a plurality of memory cells each having a ferroelectric material for storing a data item by its residual polarization is made usable selectably both as a RAM and as a ROM by controlling the so-called "imprint condition" of the ferroelectric material. When some of the memory cells are going to be used to a ROM or when the memory cells in an imprint condition are going to be used a RAM, heat and/or voltage pulses with an appropriate polarity are applied to the data-storing ferroelectric material to change its hysteresis characteristics.

Abstract: It is an object of the present invention to provide a ferroelectric memory device having a high integration and capable of maintaining nonvolatility. A threshold voltage V.sub.th of a ferroelectric memory element is set at value slightly higher than a voltage -V.sub.1. A voltage 0V is applied as a gate voltage V.sub.G when the stored data is read out. A voltage V.sub.1 is generated at a MOS capacitor C.sub.MOS if the data "High" is stored and the voltage -V.sub.1 is generated at the MOS capacitor C.sub.MOS if the data "Low" is stored. The stored data is read out by detecting a drain current during generation of the voltages. Also, a voltage 0V is applied as the gate voltage V.sub.G when stand-by operation is carried out. In this way, variation of the gate voltage V.sub.G caused by switching ON and OFF of a power source can be prevented. So that, nonvolatility of the ferroelectric memory device can be maintained as a result of preventing spontaneous polarization of a ferroelectric capacitor C.sub.ferro.

Abstract: A portable information device includes a portable main part having a clocking function, a source part which is detachably attachable to the main part and contains secondary batteries serving as a power source for the main part, and a charger which is separate from the main part and serves to charge the source part. The charger includes a clock part for setting time, and the information device is adapted to cause time data from the clock part to be transmitted to the source part when the source part is charged by the charger and, when the source part is attached to the main part, to transmit time data updated by the source part to the main part and to thereafter cause the main part to continue updating the time data.

Abstract: In a data security system, after completion of writing into a P-ROM, a switching circuit is open to thereby disconnect the connection between an internal bus and an external bus. In this state, it is impossible to read the contents out of the P-ROM. To read the contents, a protection releasing terminal is brought to "H". This causes a switching circuit to conduct to make possible read-out. The "H" signal is simultaneously supplied to an erasion signal generating circuit to erase a part selected by an erasion selecting switch. Secrecy is substantially maintained because a program in the P-ROM is not entirely read. The remainder except the erased portion can undergo checking for correctness of writing.

Abstract: A coil component comprises a wire, a terminal pin around which an end of the wire is wound, a terminal section for fixing one end of the terminal pin and for allowing the terminal pin to project therefrom. A conductive connection member is connected to the terminal pin so that it can be electrically connected to the wire. The terminal pin has a diameter on an open side thereof which is formed larger than that on a root side form which the conductive connection member is drawn out. The pin is formed as a contact section with which the conductive connection member makes contact when it is pulled in a projection direction of the terminal pin.