Abstract: A vapor phase growth apparatus of embodiments includes: a reactor; a holder provided in the reactor to place a substrate thereon; an annular out-heater provided below the holder; an in-heater provided below the out-heater; a disk-shaped upper reflector provided below the in-heater and formed of pyrolytic graphite; and a disk-shaped lower reflector provided below the upper reflector, formed of silicon carbide, and having a thickness smaller than that of the upper reflector.

Abstract: Provided is a method of manufacturing a semiconductor device according to an embodiment, including implanting carbon ions into a predetermined region of a silicon substrate; forming a silicon carbide layer on the silicon substrate by performing heat treatment on the silicon substrate implanted with the carbon ions; and removing at least a portion of the silicon substrate to expose the silicon carbide layer.

Abstract: A semiconductor device includes: a silicon substrate having a first plane with a first plane orientation; a silicon oxide layer provided on a first region of the silicon substrate; a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation; and a wide-bandgap compound semiconductor layer having a hexagonal crystal structure.

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

Abstract: The film forming apparatus includes a reaction chamber in which a substrate subjected to film forming processing can be placed, a gas supplier provided in an upper part of the reaction chamber, having a portion where gas is introduced and gas supply holes to face the substrate, a source-gas introducing line introducing a source gas into the gas supplier, a replacement-gas introducing line introducing a replacement gas into the gas supplier, a discharge line discharging the replacement gas along with a remaining source gas which is the source gas remaining in the gas supplier from the gas supplier; and a controller controlling one of an introduction amount of the replacement gas and a discharge amount of the remaining source gas and the replacement gas to be an amount corresponding to the other amount.

Abstract: A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

Abstract: Provided is a method of manufacturing a semiconductor device according to an embodiment, including implanting carbon ions into a predetermined region of a silicon substrate; forming a silicon carbide layer on the silicon substrate by performing heat treatment on the silicon substrate implanted with the carbon ions; and removing at least a portion of the silicon substrate to expose the silicon carbide layer.

Abstract: A semiconductor device includes: a silicon substrate having a first plane with a first plane orientation; a silicon oxide layer provided on a first region of the silicon substrate; a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation; and a wide-bandgap compound semiconductor layer having a hexagonal crystal structure.

Abstract: A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

Abstract: The film forming apparatus includes a reaction chamber in which a substrate subjected to film forming processing can be placed, a gas supplier provided in an upper part of the reaction chamber, having a portion where gas is introduced and gas supply holes to face the substrate, a source-gas introducing line introducing a source gas into the gas supplier, a replacement-gas introducing line introducing a replacement gas into the gas supplier, a discharge line discharging the replacement gas along with a remaining source gas which is the source gas remaining in the gas supplier from the gas supplier; and a controller controlling one of an introduction amount of the replacement gas and a discharge amount of the remaining source gas and the replacement gas to be an amount corresponding to the other amount.

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

Abstract: According to one embodiment, a microwave annealing apparatus is provided, including a housing shielding electromagnetic waves, a first electromagnetic wave source configured to apply a first electromagnetic wave into the housing, a second electromagnetic wave source configured to apply, into the housing, a second electromagnetic wave having a higher frequency than the first electromagnetic wave, a susceptor configured to hold a semiconductor substrate, made of a material transparent to the first electromagnetic wave and provided in the housing, a temperature measuring device configured to measure the temperature of the semiconductor substrate, and a control unit configured to control the power of each of the first and second electromagnetic wave sources in accordance with the temperature measured by the temperature measuring device.

Abstract: According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200° C. and lower than or equal to 700° C. and single crystallizes the amorphous layer.

Abstract: In a method, a gate dielectric film is formed on a semiconductor substrate. A gate electrode is formed on the gate dielectric film. Impurities of a first conduction-type are introduced into a drain-layer formation region. The impurities of the first conduction-type in the drain-layer formation region are activated by performing heat treatment. Single crystals of the semiconductor substrate in a source-layer formation region are amorphized by introducing inert impurities into the source-layer formation region. Impurities of a second conduction-type is introduced into the source-layer formation region. At least an amorphous semiconductor in the source-layer formation region is brought into a single crystal semiconductor and the impurities of the second conduction-type in the source-layer formation region is activated by irradiating the semiconductor substrate with microwaves.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.

Abstract: According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200° C. and lower than or equal to 700° C. and single crystallizes the amorphous layer.

Abstract: According to one embodiment, a microwave annealing apparatus is provided, including a housing shielding electromagnetic waves, a first electromagnetic wave source configured to apply a first electromagnetic wave into the housing, a second electromagnetic wave source configured to apply, into the housing, a second electromagnetic wave having a higher frequency than the first electromagnetic wave, a susceptor configured to hold a semiconductor substrate, made of a material transparent to the first electromagnetic wave and provided in the housing, a temperature measuring device configured to measure the temperature of the semiconductor substrate, and a control unit configured to control the power of each of the first and second electromagnetic wave sources in accordance with the temperature measured by the temperature measuring device.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a gate electrode on a channel region in a silicon substrate via a gate insulation film; forming a source region and a drain region in the silicon substrate so as to sandwich the channel region along a channel direction by injecting desired impurities to the silicon substrate; forming amorphous regions containing the impurities on surfaces of the source region and the drain region by amorphousizing the surfaces of the source region and the drain region; forming nickel films on the amorphous regions; and forming crystal layers containing the activated impurities and forming nickel silicide films on the crystal layers at low temperature by radiating microwaves to the amorphous regions and the nickel films.

Abstract: According to one embodiment, a manufacturing method of semiconductor device includes forming plural elements on a substrate, forming a silicon compound film so as to bury between a plurality of elements, and modifying the silicon compound film to a silicon dioxide film by radiating microwaves.