Abstract: There is disclosed is a semiconductor device which comprises a semiconductor substrate, isolation regions formed within the semiconductor substrate to define the active region, a pair of impurity diffusion regions formed within the element region in a manner to have surfaces elevated from the isolation region, a SiGe film formed on an upper surface of the impurity diffusion region so as to cover partly the side surface of the impurity diffusion region, a Ge concentration in the SiGe film being higher at a lower surface of the SiGe film than at an upper surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a gate electrode formed in the active region of the semiconductor substrate with a gate insulating film interposed therebetween and having a sidewall insulating film formed on the side surface.

Abstract: According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

Abstract: According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

Abstract: To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.

Abstract: A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer; and a silicide layer formed to overlie the diffusion layers; wherein an oxygen concentration peak, where oxygen concentration is maximized, is at a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface.

Abstract: A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer; and a silicide layer formed to overlie the diffusion layers; wherein an oxygen concentration peak, where oxygen concentration is maximized, is at a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface.

Abstract: A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1-30 atomic % of chlorine.

Abstract: A semiconductor device having a trench capacitor is disclosed. The trench is formed on the surface of a semiconductor substrate. A first insulating film is formed on the side wall of the trench and a semiconductor film is buried in the trench. The first insulating film and the semiconductor film located in the upper part of the trench are etched and a second insulating film is deposited on the exposed side wall. The semiconductor film and the first insulating film are etched and a plate electrode is formed on the exposed side wall. A capacitor insulating film is formed on the plate electrode and a storage electrode is buried within the trench. The structure provides a semiconductor device having fewer memory cell defects.

Abstract: There is disclosed is a semiconductor device which comprises a semiconductor substrate, isolation regions formed within the semiconductor substrate to define the active region, a pair of impurity diffusion regions formed within the element region in a manner to have surfaces elevated from the isolation region, a SiGe film formed on an upper surface of the impurity diffusion region so as to cover partly the side surface of the impurity diffusion region, a Ge concentration in the SiGe film being higher at a lower surface of the SiGe film than at an upper surface of the SiGe film, a metal silicide layer formed on the SiGe film, and a gate electrode formed in the active region of the semiconductor substrate with a gate insulating film interposed therebetween and having a sidewall insulating film formed on the side surface.

Abstract: Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

Abstract: A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the first single crystal silicon layer which is not covered with the insulator, and to cover an edge portion of the insulator adjacent to the region, and a non-single crystal silicon layer formed on the insulator, the interface between the non-single crystal silicon layer and the second single crystal silicon layer being positioned on the insulator.

Abstract: Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.

Abstract: A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between the source/drain regions, a gate electrode formed on the gate insulating film, and a sidewall insulating film formed on a sidewall surface of the gate electrode, wherein the gate electrode is made of SiGe, the sidewall insulating film is an insulating film obtained by oxidizing the sidewall surface of the gate electrode, and the sidewall insulating film contains silicon oxide as a main component.

Abstract: In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.

Abstract: In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.

Abstract: To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.

Abstract: In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.

Abstract: A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer; and a silicide layer formed to overlie the diffusion layers; wherein an oxygen concentration peak, where oxygen concentration is maximized, is at a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface.

Abstract: A semiconductor device includes a semiconductor device comprising a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film between the source/drain regions, and a gate sidewall spacer formed on side surfaces of the gate electrode, wherein the gate sidewall spacer is composed of silicon oxide containing 0.1-30 atomic % of chlorine.

Abstract: To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.