Abstract: A sensor including a substrate and magnetic material. The substrate has a main major surface and includes at least two spaced apart ferromagnetic layers. The magnetic material encapsulates the substrate such that the magnetic material is adjacent the main major surface.

Abstract: This application relates to a method of manufacturing a semiconductor device comprising: providing a metal carrier; placing the metal carrier into a mold for forming a molded structure holding the metal carrier; segmenting the metal carrier into at least two disconnected metal carrier segments; and attaching a semiconductor chip to the molded structure.

Abstract: A sensor device. One embodiment provides a first sensor having a first sensor surface. The first sensor surface is exposed to allow sensing of a first variable. A second sensor has a second sensor surface. The second sensor surface is sealed to inhibit sensing of the first variable, and a mold material is embedded the first and second sensors.

Abstract: A memory device has a plurality of first electrodes, a plurality of second electrodes separated from the first electrodes, and an electrolyte located between the first electrodes and the second electrodes. The first electrodes and the second electrodes include lithium.

Abstract: An energy harvesting system and method includes a rotatable member with an electrically conductive coil mounted to the rotatable member and adapted to move with the rotatable member such that the movement of the coil through a magnetic field induces a voltage in the coil. An energy storage device is coupled to the coil.

Abstract: A method and intermediate product for structuring a substrate is disclosed. At least one seed layer including a first metal compound is positioned at least partially on the substrate. The seed layer is subjected to a solution comprising ions of a second metal compound. The ions are reduced in the solution by reduction means so that the second metal compound is deposited as mask layer on the seed layer.

Abstract: Solutions for the treatment of a resist used in the manufacturing of a semiconductor device or masks used in the manufacturing of semiconductor devices are described. Preferably, the solution includes a transition metal organic compound. Furthermore embodiments of modified resists, a process and an intermediate product are described.

Abstract: The invention relates to a process for the production of biocompatible structures. For this purpose, a chemically amplified photoresist is applied to a substrate and is structured. The photoresist contains a first polymer which has anchor groups for linking a biocompatible compound and a second polymer which is electrically conductive. After the structuring of the resist, a solution of the biocompatible compound is applied so that the biocompatible compound is coordinated to the anchor groups of the polymer.

Abstract: A method of making an integrated circuit including a patterning method using chemically amplified photoresists and exposure apparatus is disclosed. One embodiment provides a photoresist layer exposed using a screened particle beam or a projection exposure with a projection wavelength of less than a limit wavelength below which secondary electrons are initiated by the exposure in the photoresist layer. The photoresist layer is irradiated, at least in a section subjected to the exposing, with UV light having a spectrum below a limit frequency corresponding to the limit wavelength.

Abstract: A polymerizable composition for the production of a resist includes at least one unsaturated, polymerizable monomer. This monomer has at least one silicon atom and at least one carbonyl group.

Abstract: A composition is specified which forms an electrically conductive resist layer and comprises a resin that can be crosslinked to form a base polymer, an organic compound that can be crosslinked to form an electrically conductive substance, a crosslinking agent having an oxidative or reductive action, and at least one solvent. An electrically conductive resist layer of this type may be used for example for dissipating electrical charges when patterning a photoresist by means of electrically charged particles.

Abstract: In a process for creating a pattern in a photoresist layer, a photoresist layer is provided on a substrate. At least selected areas of the photoresist layer are exposed to a radiation beam thereby inducing a change in the chemical composition of the photoresist material in the selectively exposed areas of the photoresist layer. The exposed areas of the photoresist layer are thermally treated using a heated fluid. The photoresist layer is then developed thereby creating the pattern.

Abstract: The invention relates to a method with contrast reversal which, inter alia, opens up new areas of application for resists.

Abstract: In a preferred embodiment, a photosensitive coating material for use as a contrast enhancing layer (CEL) disposed at the bottom of a resist film includes a base polymer, which has no acid cleavable groups for being insoluble with respect to a developer, wherein the developer is designed to remove exposed portions of the resist film. The CEL material further has a solvent for facilitating deposition of the photosensitive coating material upon a surface of a substrate. In one embodiment, the CEL further includes a photolytic acid generator, which is arranged to release an acid under exposure, said acid being arranged to diffuse into the adjacent resist deposited upon the CEL in order to enhance an acid concentration formed in exposed portions of the resist. In another embodiment, the CEL includes an alkaline additive, which is arranged to be photodecomposable to a non-alkaline, neutral compound under exposure.

Abstract: The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

Abstract: A photosensitive coating material for enhancing a contrast of a photolithographic exposure of a resist film formed on a substrate, including a base polymer, a solvent for facilitating deposition of the photosensitive coating material upon a surface adjacent to said resist film to form a film thereupon, an alkaline additive suited to diffuse into the adjacent resist for reducing or neutralizing an acid concentration formed locally therein, a photoactive component arranged to reduce or neutralize a concentration of the alkaline additives in portions of the photosensitive coating, which are exposed with optical light, UV- or X-ray radiation, electrons, charged particles, ion projection lithography.

Abstract: A photosensitive coating material for enhancing a contrast of a photolithographic exposure of a resist film formed on a substrate, including a base polymer, a solvent for facilitating deposition of the photosensitive coating material upon a surface adjacent to said resist film to form a film thereupon, an alkaline additive suited to diffuse into the adjacent resist for reducing or neutralizing an acid concentration formed locally therein, a photoactive component arranged to reduce or neutralize a concentration of the alkaline additives in portions of the photosensitive coating, which are exposed with optical light, UV- or X-ray radiation, electrons, charged particles, ion projection lithography.

Abstract: A scintillating structure for aligning an electron or ion beam using a detector while exposing a wafer, which may be a wafer or mask, is described. The structure is formed by a resist including a polymer with carboxylic acid groups, anhydride groups, and an acid-sensitive group, for instance tert.-butylester; a photoreactive compound which releases an acid upon irradiation with UV light, electrons, or ions; a solvent; and at least one scintillating substance such as anthracene, naphthaline and/or 1,4-bis-(5-phenyl-2-oxazolyl)-benzol. After a developing and silylating step, the cross-linked structure is inert with respect to solvents of additional resists that are applied over the structure. The scintillating structure is thus not dissolved, which improves the quality of online controlled electron or ion beam writing.

Abstract: The invention relates to a process for the production of photomasks. A film of a photoresist, as used for structuring semiconductor substrates, for example a CARL resist, is applied to a chromium-coated quartz glass substrate. The photoresist layer is written on by means of a focused electron beam, heated and then developed. The now structured resist is treated with an amplification agent and thus increases in its etch resistance to an oxygen plasma. During etching of the bare chromium sections, the silicon introduced into the photoresist is converted into silicon dioxide, which forms a protective layer on the chromium layer. Thus, the structure written in by means of the electron beam can be transferred without loss into the chromium layer.

Abstract: Method and Apparatus for A Post Exposure Bake Of A Resist In a Method for patterning a chemically amplified resist layer, the resist layer is provided on a substrate, the resist layer comprising resist molecules in a first state with a first solubility. Predetermined regions of the resist layer are exposed to a first radiation to generate a catalytic species in the exposed predetermined regions of the resist layer. The resist layer is exposed to a second radiation and resist molecules in the predetermined regions of the resist layer are converted from the first state into a second state with a second solubility, the conversion of a resist molecule being catalyzed by the catalytic species, and the activation energy of the catalyzed conversion of the resist molecule being lowered by the absorption of the second radiation in the resist molecule. The resist layer is developed with a predetermined developer.