Abstract: A photoresist layer is applied to the surface of a substrate. The photoresist layer is exposed and then developed, to form a structured polymer. A solution is then applied to the structured polymer that contains at least one organic electrically conductive compound. The structured polymer is converted into a conducting or semiconducting structured polymer.

Abstract: A method for structuring a lithograph mask by forming a cured, electrically-conductive layer on a mask structure having a radiation-transmissive substrate and a mask layer at least in portions of the surface of the radiation-transmissive substrate before applying a resist layer, so that during a subsequent irradiation of the resist layer by means of an electronic printing, the electrically conductive layer ensures a good charge elimination. By using a cured, electrically conductive layer, no intermixing effects between the electrically-conductive layer and the resist layer occur, and the electrically-conductive layer will be stable during subsequent development steps and not stripped off.

Abstract: A composition is specified which forms an electrically conductive resist layer and comprises a resin that can be crosslinked to form a base polymer, an organic compound that can be crosslinked to form an electrically conductive substance, a crosslinking agent having an oxidative or reductive action, and at least one solvent. An electrically conductive resist layer of this type may be used for example for dissipating electrical charges when patterning a photoresist by means of electrically charged particles.

Abstract: The invention relates to a process for the production of biocompatible structures. For this purpose, a chemically amplified photoresist is applied to a substrate and is structured. The photoresist contains a first polymer which has anchor groups for linking a biocompatible compound and a second polymer which is electrically conductive. After the structuring of the resist, a solution of the biocompatible compound is applied so that the biocompatible compound is coordinated to the anchor groups of the polymer.

Abstract: A polymerizable composition for use in electron beam lithography, according to the following structural formula: The formula use the following definitions. m is a number from 0.1 to 0.9. n is a number from 0.1 to 0.9 with m+n=1. I is an integer from 1 to 100. R1 is H, an alkyl, a halogen, an amine, a silicon compound, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R2 is H, an alkyl, a halogen, an amine, a silicon group, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R3 is an organic protective group which can be eliminated. A resist and a process using the resist utilize the polymerizable composition. The use of the polymerizable composition in a resist reduces or prevents charging of a substrate at high exposure sensitivity.

Abstract: A polymerizable composition for use in electron beam lithography, according to the following structural formula: 1

Abstract: A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

Abstract: A biocompatible structure is produced by first applying a chemically amplified photoresist to a substrate and structuring the photoresist. The photoresist comprises a polymer with anchor groups for linking a biocompatible compound. After the structuring of the resist, a solution of the biocompatible compound is applied so that the biocompatible compound is coordinated to the anchor groups of the polymer.

Abstract: A method for structuring a lithograph mask by forming a cured, electrically-conductive layer on a mask structure having a radiation-transmissive substrate and a mask layer at least in portions of the surface of the radiation-transmissive substrate before applying a resist layer, so that during a subsequent irradiation of the resist layer by means of an electronic printing, the electrically conductive layer ensures a good charge elimination. By using a cured, electrically conductive layer, no intermixing effects between the electrically-conductive layer and the resist layer occur, and the electrically-conductive layer will be stable during subsequent development steps and not stripped off.

Abstract: The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subsequent binding of silicon-containing groups. The etch stability of the resist can thus be subsequently increased so that there is no dimensional loss on transfer of the resist structure to a chromium layer arranged under the resist.

Abstract: A film of a photoresist, as used for structuring semiconductor substrates, for example a CARL resist, is applied to a chromium-coated quartz glass substrate in a process for producing photomasks. The photoresist layer is written on by a focused electron beam, heated and then developed. The now structured resist is treated with an amplification agent and thus increases in its etch resistance to an oxygen plasma. During etching of the bare chromium sections, the silicon introduced into the photoresist is converted into silicon dioxide, which forms a protective layer on the chromium layer. Thus, the structure written in by the electron beam can be transferred without loss into the chromium layer.

Abstract: A scintillating structure for aligning an electron or ion beam using a detector while exposing a wafer, which may be a wafer or mask, is described. The structure is formed by a resist including a polymer with carboxylic acid groups, anhydride groups, and an acid-sensitive group, for instance tert.-butylester; a photoreactive compound which releases an acid upon irradiation with UV light, electrons, or ions; a solvent; and at least one scintillating substance such as anthracene, naphthaline and/or 1,4-bis-(5-phenyl-2-oxazolyl)-benzol. After a developing and silylating step, the cross-linked structure is inert with respect to solvents of additional resists that are applied over the structure. The scintillating structure is thus not dissolved, which improves the quality of online controlled electron or ion beam writing.

Abstract: A biocompatible structure is produced by first applying a chemically amplified photoresist to a substrate and structuring the photoresist. The photoresist comprises a polymer with anchor groups for linking a biocompatible compound. After the structuring of the resist, a solution of the biocompatible compound is applied so that the biocompatible compound is coordinated to the anchor groups of the polymer.

Abstract: A photoresist layer is applied to the surface of a substrate. The photoresist layer is exposed and then developed, to form a structured polymer. A solution is then applied to the structured polymer that contains at least one organic electrically conductive compound. The structured polymer is converted into a conducting or semiconducting structured polymer.

Abstract: A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

Abstract: A chemically amplified resist contains the following components: a polymer with carboxylic acid anhydride groups and tert-butylester, tert-butoxycarbonyloxy, tetrahydrofuranyl, or tetrahydropyranyl groups; a photoreactive compound which, when exposed or electron-irradiated, releases a sulfonic acid having a pKa value>0.5 (acid former); a compound that can enter into a reversible chemical reaction with the sulfonic acid (buffer compound); and a solvent.

Abstract: A chemically amplified resist for electron beam lithography contains the following components: a polymer with dissolution-inhibiting groups that can be cleaved with acid catalysis, a photo-reactive compound, which upon electron irradiation releases a sulfonic acid with a pKa value ≦2.5 (photo acid generator), an electron-beam-sensitive sensitizer enhancing the exposure sensitivity of the resist, such as a fluorene derivative, and a solvent.