Abstract: A semiconductor device includes element regions which each include a first region of a first conductivity type, a second region of the first conductivity type on the first region and having a higher impurity concentration than that of the first region, a third region of a second conductivity type on the second region. The second region is between the first and third regions in a first direction. A first insulating portion surrounds each element region in a first plane. A fourth region of the first conductivity type surrounds each element region and the first insulating portion in the first plane. The fourth region has a higher impurity concentration than that of the first region. A quenching structure is above a part of the fourth region in the first direction and electrically connected to the third region.

Abstract: According to one embodiment, a light receiving device, includes pixel regions, each comprising a photoelectric transducer. Each photoelectric transducer is connected to a quenching resistor. A deep trench isolation structure surrounds and separates each pixel region. A plurality of shallow trench isolation portions is in the light receiving device. Each shallow trench isolation portion is below a quenching resistor and on a portion the deep trench isolation structure.

Abstract: A light receiving device comprises a substrate of a first type on a first electrode, a first region of the first type on the substrate, second regions of the first type arrayed on the first region, and third regions of a second type on the second regions. A first isolation portion is between the adjacent second regions and adjacent third regions. A second isolation portion comprising a metal is embedded the first isolation portions. A fourth region of the second type is on the first region and spaced from the second regions in a second direction with a pair of fifth regions thereon. An insulating film is on the fourth region and the pair of fifth regions. A second electrode is on the insulating film between the pair of fifth regions. The second electrode is comprised of the same metal as the second isolation portion.

Abstract: A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

Abstract: A light detector according to one embodiment includes a substrate, a plurality of avalanche photodiodes, a well region, and a microlens array. The plurality of avalanche photodiodes are provided above the substrate. Each of the avalanche photodiodes is surrounded by a trench portion among a plurality of trench portions. The well region is provided between the trench portions that are adjacent to each other. The well region includes at least one of a transistor and a diode. The microlens array is provided to cover the avalanche photodiodes.

Abstract: A semiconductor device includes element regions which each include a first region of a first conductivity type, a second region of the first conductivity type on the first region and having a higher impurity concentration than that of the first region, a third region of a second conductivity type on the second region. The second region is between the first and third regions in a first direction. A first insulating portion surrounds each element region in a first plane. A fourth region of the first conductivity type surrounds each element region and the first insulating portion in the first plane. The fourth region has a higher impurity concentration than that of the first region. A quenching structure is above a part of the fourth region in the first direction and electrically connected to the third region.

Abstract: An optical detection portion includes a substrate of a first conductivity type, a semiconductor layer of the first conductivity type provided on the substrate, a first conductivity-type layer provided in the semiconductor layer, and a second conductivity-type layer provided on the first conductivity-type layer. The circuit portion includes a first well of a second conductivity type provided in the semiconductor layer, a second well of the first conductivity type provided in the first well, a first drain layer provided in the second well, a first source layer provided in the second well, a second drain layer provided in the first well, and a second source layer.

Abstract: A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.

Abstract: According to one embodiment, a light receiving device, includes pixel regions, each comprising a photoelectric transducer. Each photoelectric transducer is connected to a quenching resistor. A deep trench isolation structure surrounds and separates each pixel region. A plurality of shallow trench isolation portions is in the light receiving device. Each shallow trench isolation portion is below a quenching resistor and on a portion the deep trench isolation structure.

Abstract: A photodetector includes: a silicon layer of a first conductivity type; a first semiconductor layer that is provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than a carrier concentration of the silicon layer; a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer; a third semiconductor layer provided in the silicon layer, of a first conductivity type, having an impurity concentration higher than that of the silicon layer, and separated from the first semiconductor layer; a first electrode connected to the silicon layer; and a second electrode connected to the second semiconductor layer.

Abstract: A light receiving device comprises a substrate of a first type on a first electrode, a first region of the first type on the substrate, second regions of the first type arrayed on the first region, and third regions of a second type on the second regions. A first isolation portion is between the adjacent second regions and adjacent third regions. A second isolation portion comprising a metal is embedded the first isolation portions. A fourth region of the second type is on the first region and spaced from the second regions in a second direction with a pair of fifth regions thereon. An insulating film is on the fourth region and the pair of fifth regions. A second electrode is on the insulating film between the pair of fifth regions. The second electrode is comprised of the same metal as the second isolation portion.

Abstract: A light receiving device includes a protective layer between first and second electrodes, a first semiconductor layer between the protective layer and the first electrode, the first semiconductor layer having first and second protruding portions, an insulating material between the first and second protruding portions and extending between the protective layer and the first semiconductor layer, a second semiconductor layer between the first protruding portion and the protective layer and between the first protruding portion and the insulating material, a third semiconductor layer between the second semiconductor layer and the protective layer and between the second semiconductor layer and the insulating material, a fourth semiconductor layer between the second protruding portion and the protective layer and between the second protruding portion and the insulating material, and a fifth semiconductor layer between the fourth semiconductor layer and the protective layer and between the fourth semiconductor layer

Abstract: A light receiving device includes a protective layer between first and second electrodes, a first semiconductor layer between the protective layer and the first electrode, the first semiconductor layer having first and second protruding portions, an insulating material between the first and second protruding portions and extending between the protective layer and the first semiconductor layer, a second semiconductor layer between the first protruding portion and the protective layer and between the first protruding portion and the insulating material, a third semiconductor layer between the second semiconductor layer and the protective layer and between the second semiconductor layer and the insulating material, a fourth semiconductor layer between the second protruding portion and the protective layer and between the second protruding portion and the insulating material, and a fifth semiconductor layer between the fourth semiconductor layer and the protective layer and between the fourth semiconductor layer

Abstract: A light receiving device includes: first semiconductor layers provided on a first main surface of a semiconductor substrate and having a first conductivity type impurity at a first concentration; an insulating film provided between the first semiconductor layers; a photoelectric conversion element provided in the first semiconductor layer; a first electrode provided on the insulating film; and a second electrode provided on a second main surface opposite the first main surface of the semiconductor substrate. The photoelectric conversion element includes a second semiconductor layer provided at a predetermined depth from an upper surface of the first semiconductor layer and having a second conductivity type impurity at a second concentration, and a third semiconductor layer provided within the first semiconductor layer to surround a side surface and a lower surface of the second semiconductor layer and having the first conductivity type impurity at a third concentration higher than the first concentration.

Abstract: A photodetector includes: a silicon layer of a first conductivity type; a first semiconductor layer that is provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than a carrier concentration of the silicon layer; a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer; a third semiconductor layer provided in the silicon layer, of a first conductivity type, having an impurity concentration higher than that of the silicon layer, and separated from the first semiconductor layer; a first electrode connected to the silicon layer; and a second electrode connected to the second semiconductor layer.

Abstract: A light receiving device includes: first semiconductor layers provided on a first main surface of a semiconductor substrate and having a first conductivity type impurity at a first concentration; an insulating film provided between the first semiconductor layers; a photoelectric conversion element provided in the first semiconductor layer; a first electrode provided on the insulating film; and a second electrode provided on a second main surface opposite the first main surface of the semiconductor substrate. The photoelectric conversion element includes a second semiconductor layer provided at a predetermined depth from an upper surface of the first semiconductor layer and having a second conductivity type impurity at a second concentration, and a third semiconductor layer provided within the first semiconductor layer to surround a side surface and a lower surface of the second semiconductor layer and having the first conductivity type impurity at a third concentration higher than the first concentration.

Abstract: A light-receiving device has a semiconductor substrate that includes a first pixel region that has a first thickness and a second pixel region that has a second thickness less than the first thickness. It has a plurality of first photoelectric conversion elements formed in the first pixel region and a first electrode where their outputs are supplied thereto. It has a plurality of photoelectric conversion elements formed in the second pixel region and a second electrode where their outputs are supplied thereto. It has a common electrode for the first and second photoelectric conversion elements.

Abstract: A light-receiving device has a semiconductor substrate that includes a first pixel region that has a first thickness and a second pixel region that has a second thickness less than the first thickness. It has a plurality of first photoelectric conversion elements formed in the first pixel region and a first electrode where their outputs are supplied thereto. It has a plurality of photoelectric conversion elements formed in the second pixel region and a second electrode where their outputs are supplied thereto. It has a common electrode for the first and second photoelectric conversion elements.

Abstract: According to one embodiment, a pattern transfer mold includes a base body, first and second stacked bodies, first and second electrodes. The base body includes a base unit including a first surface, a first protrusion provided on the first surface and having a first side surface, and a second protrusion provided on the first surface, separated from the first protrusion, and having a second side surface opposing the first side surface. The first stacked body is provided on the first side surface, and includes first conductive layers and a first insulating layer. The second stacked body is provided on the second side surface, separated from the first stacked body, and includes second conductive layers and a second insulating layer. The first electrode is electrically connected to at least one of the first conductive layers. The second electrode is electrically connected to at least one of the second conductive layers.

Abstract: A light-receiving device includes a silicon semiconductor substrate, a plurality of first serial connections each of which includes a first avalanche photodiode (APD) and a first resistor connected in series, and a plurality of second serial connections each of which includes a second avalanche photodiode (APD) and a second resistor connected in series. The first APDs and the first resistors are formed on the silicon semiconductor substrate, and the first APDs is formed of silicon. The second APDs and the second resistors are formed on the silicon semiconductor substrate, and the second APDs is formed of a material having a smaller band gap than silicon. The plurality of first and second serial connections is connected in parallel between an anode terminal and a cathode terminal.