Abstract: A light-receiving device includes a silicon semiconductor substrate, a plurality of first serial connections each of which includes a first avalanche photodiode (APD) and a first resistor connected in series, and a plurality of second serial connections each of which includes a second avalanche photodiode (APD) and a second resistor connected in series. The first APDs and the first resistors are formed on the silicon semiconductor substrate, and the first APDs is formed of silicon. The second APDs and the second resistors are formed on the silicon semiconductor substrate, and the second APDs is formed of a material having a smaller band gap than silicon. The plurality of first and second serial connections is connected in parallel between an anode terminal and a cathode terminal.

Abstract: According to one embodiment, a solid-state imaging device includes photoelectric conversion elements, filters, and an absorption layer. The filters are each configured to transmit an electromagnetic wave having a predetermined wavelength and to reflect electromagnetic waves having other wavelengths. The filters have flat shapes inclined with respect to a substrate surface and are respectively disposed above the photoelectric conversion elements. The absorption layer is arranged at outer peripheries of arrangement regions of pixels, and at a position closer to a light-receiving face side than arrangement positions of the filters. The absorption layer is made of a material that absorbs electromagnetic waves reflected by the filters. The filters respectively have inclination angles with respect to the substrate surface, which are different from each other in accordance with the types of the pixels.

Abstract: A solid imaging device to an embodiment includes a semiconductor substrate and a conductive film. The semiconductor substrate has a plurality of photoelectric conversion elements constituting a plurality of pixels formed therein, the semiconductor substrate having a first surface and a second surface opposite to the first surface and being equipped with a wire layer on a first surface side of the semiconductor substrate. The conductive film is patterned and arranged above a border between pixels of the plurality of pixels on a second surface side of the semiconductor substrate. The conductive film is substantially transparent to visible light.

Abstract: According to one embodiment, a solid-state imaging device includes: a photodiode which is provided in a pixel region in which each pixel in a pixel forming region above a substrate is disposed; an interconnection layer which includes interconnections to connect the photodiode to peripheral circuits and an interlayer insulating film to insulate the interconnections from each other, and is provided above the photodiode; a color filter which is provided above the interconnection layer corresponding to the pixel region, and limits a wavelength of light incident on the photodiode. A light incident position correcting layer is provided between the color filter corresponding to the pixel disposed in at least the outer peripheral portion of the pixel forming region and the interconnection layer, and includes an anti-reflection film which is provided above the interconnection layer, and materials which have a negative refraction index and provided above the anti-reflection film.

Abstract: According to one embodiment, an optical device includes a plurality of optical elements arrange in array. At least of the optical elements includes an optical layer constituted by a plurality of patterns. The plurality of patterns are formed by a layered body including metal layers and a dielectric layer interlayered between the metal layers, and formed as a plurality of regularly-arranged loop-like patterns with a density decreasing from the center toward the periphery of the loop.

Abstract: According to one embodiment, there is a solid-state imaging device including an imaging region. In the imaging region, a plurality of pixels are arranged two-dimensionally. A first inclination angle of a light incidence surface of a dichroic filter in a first pixel among the plurality of pixels relative to a normal to a surface of a semiconductor substrate and a second inclination angle of a light incidence surface of a dichroic filter in a second pixel located farther from a center of the imaging region than the first pixel among the plurality of pixels relative to the normal are decided on so as to make, for light incident on the imaging region, a filter property of the dichroic filter in the first pixel and a filter property of the dichroic filter in the second pixel equalized.

Abstract: According to one embodiment, there is provided a solid-state imaging device including a plurality of pixels. Each of the plurality of pixels includes a first photoelectric conversion unit, a second photoelectric conversion unit, a multilayer interference filter, and a reflective unit. The first photoelectric conversion unit includes a photoelectric conversion film photoelectrically converting first color light. In the multilayer interference filter, first and second layers having different refractive indexes are alternately laminated. The multilayer interference filter selectively guides at least second color light of light having passed through the first photoelectric conversion unit to the second photoelectric conversion unit. The reflective unit is disposed on a side surface of the multilayer interference filter.

Abstract: A solid-state image pickup device including a pixel array having a plurality of pixels, each of which includes a photoelectric converting unit and a multilayer interference filter. The multilayer interference filter includes an upper laminated structure, a lower laminated structure, and a control structure. Both the multilayer interference filter in a first pixel and the multilayer interference filter in a second pixel which is more distant from a center of the pixel array than the first pixel are disposed to selectively guide a light having a first color to the photoelectric converting unit. The control structure in the first pixel and the control structure in the second pixel have different configurations from each other in such a manner that a filter characteristic of the multilayer interference filter in the first pixel is equivalent to that of the multilayer interference filter in the second pixel.

Abstract: According to one embodiment, there is a solid-state imaging device including an imaging region. In the imaging region, a plurality of pixels are arranged two-dimensionally. A first inclination angle of a light incidence surface of a dichroic filter in a first pixel among the plurality of pixels relative to a normal to a surface of a semiconductor substrate and a second inclination angle of a light incidence surface of a dichroic filter in a second pixel located farther from a center of the imaging region than the first pixel among the plurality of pixels relative to the normal are decided on so as to make, for light incident on the imaging region, a filter property of the dichroic filter in the first pixel and a filter property of the dichroic filter in the second pixel equalized.

Abstract: According to one embodiment, a pixel detecting light having the longest wavelength in a picture element includes a protective film which is disposed on a photodiode at a surface side facing a light incident surface of a semiconductor substrate and a first diffraction grating portion which is disposed on the protective film and where columnar holes penetrating in a thickness direction are two-dimensionally arrayed. Diameter and array period of the holes are selected so that the first diffraction grating portion reflects light transmitting through a filter disposed on the pixel.

Abstract: According to one embodiment, an optical device includes a plurality of optical elements arrange in array. At least of the optical elements includes an optical layer constituted by a plurality of patterns. The plurality of patterns are formed by a layered body including metal layers and a dielectric layer interlayered between the metal layers, and formed as a plurality of regularly-arranged loop-like patterns with a density decreasing from the center toward the periphery of the loop.

Abstract: According to one embodiment, there is provided a solid-state imaging device including a first photoelectric conversion layer and a color filter. The color filter includes a multi-layer interference filter and a guided mode resonant grating. The guided mode resonant grating includes a plurality of diffraction gratings and a plurality of inter-grating regions. The plurality of diffraction gratings are formed of a material having a first index of refraction and periodically arrayed at least one-dimensionally. The plurality of inter-grating regions are arranged between at least the plurality of diffraction gratings. Each of the plurality of inter-grating regions includes an insulating film region and an air gap region. The insulating film region is formed of a material having a second index of refraction lower than the first index of refraction.

Abstract: According to one embodiment, there is provided a solid-state imaging device including a pixel array. In the pixel array, a plurality of pixels are arrayed. The plurality of pixels include an imaging pixel and a focus-detecting pixel. The focus-detecting pixel includes a first photoelectric conversion part, a first diffraction grating, and a second diffraction grating. The first diffraction grating is arranged above the first photoelectric conversion part. The second diffraction grating is arranged between the first photoelectric conversion part and the first diffraction grating.

Abstract: Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.

Abstract: According to one embodiment, a pattern transfer mold includes a base body, first and second stacked bodies, first and second electrodes. The base body includes a base unit including a first surface, a first protrusion provided on the first surface and having a first side surface, and a second protrusion provided on the first surface, separated from the first protrusion, and having a second side surface opposing the first side surface. The first stacked body is provided on the first side surface, and includes first conductive layers and a first insulating layer. The second stacked body is provided on the second side surface, separated from the first stacked body, and includes second conductive layers and a second insulating layer. The first electrode is electrically connected to at least one of the first conductive layers. The second electrode is electrically connected to at least one of the second conductive layers.

Abstract: According to one embodiment, a solid-state imaging element includes a substrate, and a plurality of color filters. A plurality of photoelectric conversion units is provided in the substrate. The plurality of color filters is provided respectively for the plurality of photoelectric conversion units. The plurality of color filters is configured to selectively transmit light of a designated wavelength band. Each of the plurality of color filters includes a stacked structure unit and a periodic structure unit. A plurality of layers having different refractive indexes is stacked in the stacked structure unit. A plurality of components is provided in the periodic structure unit at different periods according to the designated wavelength band and an incident angle of the light.

Abstract: According to one embodiment, there is provided a solid-state image sensor including a photoelectric conversion layer, and a multilayer interference filter. The multilayer interference filter is arranged to conduct light of a particular color, of incident light, selectively to the photoelectric conversion layer. The multilayer interference filter has a laminate structure in which a first layer having a first refraction index and a second layer having a second refraction index are repeatedly laminated, and a third layer which is in contact with a lower surface of the laminate structure and has a third refraction index. A lowermost layer of the laminate structure is the second layer. The third refraction index is not equal to the first refraction index and is higher than the second refraction index.

Abstract: According to one embodiment, an optical device includes a substrate and a first optical layer. The substrate has a first surface and a second surface. The second surface is on an opposite side of the first surface. The first optical layer is provided on the first surface and includes a plurality of first refractive index setting units disposed along the first surface. Each of the first refractive index setting units has a plurality of metal patterns. The metal patterns provide different permeability to the each of the first refractive index setting units. The each of the first refractive index setting units has a refractive index in accordance with the permeability.

Abstract: According to an embodiment, a solid-state imaging device includes a photoelectric, conversion element. The photoelectric conversion element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the solid-state imaging device, D2m3/L2m3×ni32/N2<D1M2/L1M2×ni22/N2 and D1m1/L1m1×ni12/N1<D1m2/L1m2×ni22/N1 are established.

Abstract: According to one embodiment, a solid state imaging device includes a photoelectric converting portion including a semiconductor region and a semiconductor film. The semiconductor region has a first region and a second region. The first region is of a second conductivity type. The first region is provided in a semiconductor substrate. The second region is of a first conductivity type. The first conductivity type is a different conductivity type from the second conductivity type. The second region is provided on the first region. The semiconductor film is of the second conductivity type. The semiconductor film is provided on the semiconductor region. An absorption coefficient of a material of the semiconductor film to a visible light is higher than an absorption coefficient of a material of the semiconductor substrate to the visible light. A thickness of the semiconductor film is smaller than a thickness of the semiconductor region.