Patents by Inventor Koichiro Hayashi

Koichiro Hayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7608647
    Abstract: The present invention provides a resin composition and a resin molded article capable of designing to make specific properties, in particular, fuel barrier properties, consistent with impact resistance. The resin composition includes a mixture of a thermoplastic resin with fibers having lengths of from 4 to 20 mm. The fibers have melting points higher than a melting point of the thermoplastic resin or are infusible.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: October 27, 2009
    Assignees: Toyoda Gosei Co., Ltd., Toyota Jidosha Kabushiki Kaisha
    Inventors: Daisuke Tsutsumi, Koichiro Hayashi, Kenichi Yasunaga
  • Patent number: 7601196
    Abstract: Alloy powder for forming a hard phase for a valve seat material having excellent high temperature wear resistance. The overall composition is consisted of Mo: 48 to 60 mass %, Cr: 3 to 12 mass % and Si: 1 to 5 mass %, and the balance of Co and inevitable impurities.
    Type: Grant
    Filed: February 23, 2007
    Date of Patent: October 13, 2009
    Assignee: Hitachi Powdered Metals Co., Ltd.
    Inventors: Hideaki Kawata, Koichiro Hayashi
  • Publication number: 20090201751
    Abstract: In an SDRAM of reduced current consumption, a signal RAS for performing refresh while temporally splitting refresh becomes active N times (where N is an integer and N?2 holds) in a single refresh time period (indicated by a signal REF) to thereby refresh an internal memory array successively. The SDRAM includes a DLL circuit for aligning phase of an internal clock signal with that of an external clock signal that is externally supplied, and a DLL control circuit for exercising control so as to halt operation of the DLL circuit in an interval in which the address signal becomes active one or more times and N?1 times or fewer, this interval being included in an interval in which the signal RAS becomes active N times. The DLL control circuit counts the signal RAS and decodes the value of the count. Operation of the DLL circuit is halted while a prescribed range of count values is being decoded.
    Type: Application
    Filed: April 21, 2009
    Publication date: August 13, 2009
    Applicant: Elpida Memory, Inc.
    Inventor: Koichiro HAYASHI
  • Patent number: 7545697
    Abstract: In an SDRAM of reduced current consumption, a signal RAS for performing refresh while temporally splitting refresh becomes active N times (where N is an integer and N?2 holds) in a single refresh time period (indicated by a signal REF) to thereby refresh an internal memory array successively. The SDRAM includes a DLL circuit for aligning phase of an internal clock signal with that of an external clock signal that is externally supplied, and a DLL control circuit for exercising control so as to halt operation of the DLL circuit in an interval in which the address signal becomes active one or more times and N?1 times or fewer, this interval being included in an interval in which the signal RAS becomes active N times. The DLL control circuit counts the signal RAS and decodes the value of the count. Operation of the DLL circuit is halted while a prescribed range of count values is being decoded.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: June 9, 2009
    Assignee: Elpida Memory, Inc.
    Inventor: Koichiro Hayashi
  • Publication number: 20090115402
    Abstract: A voltage detecting circuit detects a voltage between first and second wirings, and comprises at least first and second transistors connected in series between the first and second wirings, wherein a first reference voltage is supplied to a gate of the first transistor, a gate and a drain of the second transistor are short-circuited, and a detection signal is output from a connection point between a drain of the first transistor and a source of the second transistor.
    Type: Application
    Filed: October 28, 2008
    Publication date: May 7, 2009
    Applicant: ELPIDA MEMORY, INC.
    Inventors: Koichiro HAYASHI, Hitoshi TANAKA
  • Publication number: 20090116329
    Abstract: An internal-voltage generating circuit includes a plurality of generating units connected in cascade, out of the plurality of generating units, a generating unit of relatively lower level is activated by an output of a generating unit of relatively higher level. According to the present invention, because the plural voltage generating units are connected in cascade, the voltage generating unit of lower level is not activated unless the voltage generating unit of higher level is activated. Therefore, at least the voltage generating unit of the second level and the subsequent voltage generating units consume very small power during the standby time. Consequently, total power consumption of the internal-voltage generating circuit can be reduced.
    Type: Application
    Filed: October 28, 2008
    Publication date: May 7, 2009
    Applicant: ELPIDA MEMORY, INC.
    Inventors: Koichiro HAYASHI, Hitoshi Tanaka
  • Publication number: 20080238536
    Abstract: A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.
    Type: Application
    Filed: March 20, 2008
    Publication date: October 2, 2008
    Applicant: ELPIDA MEMORY, INC
    Inventors: Koichiro HAYASHI, Hitoshi Tanaka
  • Patent number: 7294167
    Abstract: Alloy powder for forming a hard phase for a valve seat material having excellent high temperature wear resistance. The overall composition is consisted of Mo: 48 to 60 mass %, Cr: 3 to 12 mass % and Si: 1 to 5 mass %, and the balance of Co and inevitable impurities.
    Type: Grant
    Filed: November 18, 2004
    Date of Patent: November 13, 2007
    Assignee: Hitachi Powdered Metals Co., Ltd.
    Inventors: Hideaki Kawata, Koichiro Hayashi
  • Patent number: 7250469
    Abstract: A fuel tank produced in such a manner that an upper shell and a lower shell melt-molded as two split molded parts from a PPS resin composition are welded to each other at a welding portion. The PPS resin composition contains (a) 60% by weight to 95% by weight of a PPS resin, and (b) 5% by weight to 40% by weight of an olefin resin. The (a) PPS resin contains (a-1) a PPS resin having an MFR of 90 g/10 min to 350 g/10 min and an amount of extracts by chloroform of 2.2% by weight to 4.5% by weight. The (b) olefin resin contains (b-1) a specific olefin copolymer, and (b-2) an ethylene-?-olefin copolymer. The MFR of the PPS resin composition is 15 g/10 min to 50 g/10 min.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: July 31, 2007
    Assignees: Toyoda Gosei Co., Ltd., FTS Co., Ltd.
    Inventors: Daisuke Tsutsumi, Junji Koizumi, Koichiro Hayashi, Joji Kasugai, Masahide Kobayashi
  • Publication number: 20070169585
    Abstract: Alloy powder for forming a hard phase for a valve seat material having excellent high temperature wear resistance. The overall composition is consisted of Mo: 48 to 60 mass %, Cr: 3 to 12 mass % and Si: 1 to 5 mass %, and the balance of Co and inevitable impurities.
    Type: Application
    Filed: February 23, 2007
    Publication date: July 26, 2007
    Applicant: HITACHI POWDERED METALS CO., LTD.
    Inventors: Hideaki Kawata, Koichiro Hayashi
  • Publication number: 20070091705
    Abstract: In an SDRAM of reduced current consumption, a signal RAS for performing refresh while temporally splitting refresh becomes active N times (where N is an integer and N?2 holds) in a single refresh time period (indicated by a signal REF) to thereby refresh an internal memory array successively. The SDRAM includes a DLL circuit for aligning phase of an internal clock signal with that of an external clock signal that is externally supplied, and a DLL control circuit for exercising control so as to halt operation of the DLL circuit in an interval in which the address signal becomes active one or more times and N?1 times or fewer, this interval being included in an interval in which the signal RAS becomes active N times. The DLL control circuit counts the signal RAS and decodes the value of the count. Operation of the DLL circuit is halted while a prescribed range of count values is being decoded.
    Type: Application
    Filed: October 16, 2006
    Publication date: April 26, 2007
    Inventor: Koichiro Hayashi
  • Publication number: 20060244864
    Abstract: The present invention provides an electronic apparatus which allows a user to easily compare image quality before and after an adjustment. When settings are made, a screen is divided, a state before the adjustment is displayed on a divided screen A and the same state is also displayed on divided screens B and C. Set values can be changed on the divided screens B and C independently and by simultaneously comparing the screens before and after the adjustment, the user can easily adjust image quality.
    Type: Application
    Filed: April 27, 2006
    Publication date: November 2, 2006
    Applicant: ORION ELECTRIC CO., LTD.
    Inventor: Koichiro Hayashi
  • Publication number: 20060207386
    Abstract: Alloy powder for forming a hard phase for a valve seat material having excellent high temperature wear resistance. The overall composition is consisted of Mo: 48 to 60 mass %, Cr: 3 to 12 mass % and Si: 1 to 5 mass %, and the balance of Co and inevitable impurities.
    Type: Application
    Filed: May 18, 2006
    Publication date: September 21, 2006
    Applicant: HITACHI POWDER METALS CO., LTD.
    Inventors: Hideaki Kawata, Koichiro Hayashi
  • Patent number: 7040601
    Abstract: Valve guides made of ferrous sintered alloy for internal combustion engines have improved durability of the valve stem without soft nitriding process. The valve guides include Cu: 8 to 20 mass %, C: 0.8 to 1.5 mass %, and at least one of MnS, WS2, and MoS2: 0.5 to 2 mass % and the balance of Fe, the valve guides have many pores, have a metal structure in which the copper phase dispersed in an iron pearlite matrix exists, and have a structure in which metal sulfides are dispersed between particles between the matrix and the copper phase.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: May 9, 2006
    Assignees: Hitachi Powdered Metals Co., Ltd., Honda Giken Kogyo Kabushiki Kaisha
    Inventors: Katsunao Chikahata, Koichiro Hayashi, Katsuaki Sato
  • Publication number: 20060068141
    Abstract: The present invention provides a resin composition and a resin molded article capable of designing to make specific properties, in particular, fuel barrier properties, consistent with impact resistance. The resin composition includes a mixture of a thermoplastic resin with fibers having lengths of from 4 to 20 mm. The fibers have melting points higher than a melting point of the thermoplastic resin or are infusible.
    Type: Application
    Filed: September 22, 2005
    Publication date: March 30, 2006
    Inventors: Daisuke Tsutsumi, Koichiro Hayashi, Kenichi Yasunaga
  • Publication number: 20060032328
    Abstract: Disclosed is a sintered valve guide guide formed of a sintered alloy consisting essentially of 3.5 to 5% copper, 0.3 to 0.6% tin, 0.04 to 0.15% phosphorus, 1.5 to 2.5% carbon and the balance iron, by mass, and as occasion needs, further containing 0.46 to 1.41% metal oxide, and MnS and/or magnesium silicate. The metallographic structure has: a matrix containing a pearlite phase, a Fe—P—C compound phase and a Cu—Sn alloy phase; pores; and a graphite of 1.2 to 1.7% by mass of the sintered alloy. In the cross section, the ratio of the pearlite phase to the matrix is 90 area % or more, the ratio of the Fe—P—C compound phase is 0.1 to 3 area % of the cross section, the ratio of the Cu—Sn alloy phase to the cross section is 1 to 3% by area, and the ratio of a portion of the Fe—P—C compound phase having a thickness of 15 microns or more is 10 area % or less of the whole Fe—P—C compound phase.
    Type: Application
    Filed: July 14, 2005
    Publication date: February 16, 2006
    Inventors: Katsunao Chikahata, Koichiro Hayashi, Hiroki Fujitsuka, Toru Tsuboi
  • Publication number: 20050132842
    Abstract: Alloy powder for forming a hard phase for a valve seat material having excellent high temperature wear resistance. The overall composition is consisted of Mo: 48 to 60 mass %, Cr: 3 to 12 mass % and Si: 1 to 5 mass %, and the balance of Co and inevitable impurities.
    Type: Application
    Filed: November 18, 2004
    Publication date: June 23, 2005
    Applicant: HITACHI POWDERED METALS CO., LTD.
    Inventors: Hideaki Kawata, Koichiro Hayashi
  • Publication number: 20050040358
    Abstract: Valve guides made of ferrous sintered alloy for internal combustion engines have improved durability of the valve stem without soft nitriding process. The valve guides include Cu: 8 to 20 mass %, C: 0.8 to 1.5 mass %, and at least one of MnS, WS2, and MoS2: 0.5 to 2 mass % and the balance of Fe, the valve guides have many pores, have a metal structure in which the copper phase dispersed in an iron pearlite matrix exists, and have a structure in which metal sulfides are dispersed between particles between the matrix and the copper phase.
    Type: Application
    Filed: December 27, 2002
    Publication date: February 24, 2005
    Applicants: Hitachi Powdered Metals Co. , Ltd., Honda Giken Kogyo Kabushiki Kaisha
    Inventors: Katsunao Chikahata, Koichiro Hayashi, Katsuaki sato
  • Patent number: D510492
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: October 11, 2005
    Assignees: Itoki Co., Ltd., Itoki Crebio Corporation
    Inventors: Tamio Sakurai, Koichiro Hayashi
  • Patent number: D512251
    Type: Grant
    Filed: March 17, 2004
    Date of Patent: December 6, 2005
    Assignees: Itoki Co., Ltd., Itoki Crebio Corporation
    Inventors: Tamio Sakurai, Koichiro Hayashi