Abstract: It is provided a storage system for inputting and outputting data in accordance with a request from a host computer, comprising: at least one processor for processing data requested to be input or output; a plurality of transfer controllers for transferring data between memories in the storage system; and at least one transfer sequencer for requesting a data transfer to the plurality of transfer controllers in accordance with an instruction from the processor. The processor transmits a series of data transfer requests to the at least one transfer sequencer. The at least one transfer sequencer requests a data transfer to each of the plurality of transfer controllers based on the series of data transfer requests. The each transfer controller transfers data between the memories in accordance with an instruction from the at least one transfer sequencer.

Abstract: A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film.

Abstract: A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure.

Abstract: A shaft sealing device in which a load acting on a sliding section of the device is reduced to extend the life of the device and which permits no leakage of fluid in a machine to an atmospheric air. The shaft sealing device has seals arranged in three stages in the axial direction between a seal case and a rotating shaft passed through the inner periphery of the seal case. A first-stage seal on the machine's inner side and a third-stage seal on the machine's outer side have contact type mechanical seal structures in which a rotational sealing element and a stationary sealing element are in close sliding contact with each other. The intermediate second-stage seal has a contactless mechanical seal structure in which a rotational sealing element and a stationary sealing element are kept by dynamic pressure so as not to be in contact with each other.

Abstract: The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.

Abstract: A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.

Abstract: There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.

Abstract: A shaft sealing device in which a load acting on a sliding section of the device is reduced to extend the life of the device and which permits no leakage of fluid in a machine to an atmospheric air to eliminate the need of recovery of the fluid. The shaft sealing device has seals arranged in three stages in the axial direction between a seal case and a rotating shaft passed through the inner periphery of the seal case. Of the seals of the three stages, a first-stage seal on the machine's inner side and a third-stage seal on the machine's outer side have a contact type mechanical seal structure in which a rotational sealing element and a stationary sealing element are in close sliding contact with each other. Further, of the seals of the three stages, the intermediate second-stage seal has a contactless mechanical seal structure in which a rotational sealing element and a stationary sealing element are kept by dynamic pressure so as not to be in contact with each other.

Abstract: A worm wheel is provided in which a step is not formed near a tooth face meshing with a worm, and noise does not easily occur during power transmission. A worm wheel 1 includes a circular arc-shaped tooth section 5 that is a portion meshing with a worm 101 and configuring a circular tube worm gear, and a helical tooth section 4 that is connected to one end side of the circular arc-shaped tooth section 5. An angle of torsion at an arbitrary reference point 14 in a tooth depth direction of a tooth 3 on a boundary 7 between the circular arc-shaped tooth section 5 and the helical tooth section 4 is equal to an angle of torsion at a second reference point 15 corresponding to the first reference point 14 in the tooth depth direction of the tooth 3 in a diameter portion P0 of a throat of the circular arc-shaped section 5. As a result, a step is not formed on a tooth face on the boundary 7 between the circular arc-shaped tooth section 5 and the helical tooth section 4.

Abstract: The present invention provides a mechanical seal device for obtaining appropriate sliding properties under any conditions, such as a pressure of seal is low or high. In the present invention, both first grooves 463 and second grooves 464 are formed on a sliding face 46 of a stationary ring 46. The first grooves which are not in communication externally and act for reducing contact resistance of a sliding face by a dynamic pressure action when a rotary shaft rotates, the second grooves act for reducing the contact resistance of the sliding face constantly by introducing a pressure from external. Thus, a mechanical seal device which is available to seal sealed fluid under an appropriate dry contact status wherein a sliding face load is reduced in any condition can be provided.

Abstract: A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diffusion layer formed by diffusing an aluminum atom or an aluminum ion to the silicon oxide film or an interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or a mixed film of hafnium oxide and aluminum oxide having a ratio of hafnium and aluminum ranging from about 2:8 to 8:2 is used as the high-k dielectric film. The heat treatment is performed at any temperature from about 500 to 1000° C. for any period of time from about 1 to 100 seconds.

Abstract: The invention is plasma display panel (1) with a plurality of pairs of display electrodes (6) and dielectric layers (8) disposed on front glass substrate (3), and it is intended to realize plasma display panel (1), wherein the stress at a surface where dielectric layer (8) of front glass substrate (3) is not disposed is a compressive stress ranging from 0.8 MPa to 2.4 MPa, the glass substrate is sufficient in strength, and the panel is almost free from breakage.

Abstract: Disclosed here is a flat display having a pair of glass substrates and a sealing member applied on the periphery of the glass substrates. The glass substrates are oppositely disposed to each other at intervals therebetween. The glass substrates contain silicon as a component, while the sealing member contains bismuth. A protection layer and an insulating layer as an intermediate layer, which has a silicon-content lower than the glass substrates, are formed on the interface between the glass substrates and the sealing member. The structure above reinforces bonding strength of the sealing section, providing a highly reliable flat display.

Abstract: A plasma display panel has a plurality of pairs of display electrodes, dielectric layer, and protective layer disposed on front glass substrate. Protective layer is formed of nano crystal particles, and the average particle diameter of the nano crystal particles is in the range of 10 nm to 100 nm. With this structure, in the plasma display panel, front glass substrate has a sufficient strength and occurrence of panel cracks is reduced.

Abstract: A mechanical seal device includes a rotational seal ring connected to a rotational shaft, having a rotational seal surface and arc-shaped grooves arranged on the rotational seal surface. The grooves are sectionalized by partition walls. A stationary seal ring has a stationary seal surface facing the rotational seal surface of the rotational seal ring. A spring biases the stationary seal ring against the rotational seal ring. Outlet portions are formed on the stationary seal surface of the stationary seal ring and connect with a fluid supply path for supplying a pressure fluid. A circumferential direction length (W3) of each outlet portion is made to be ½ of a circumferential direction length (W1) of each partition wall or longer (W3?W1/2); and a circumferential direction length (W3) of the outlet portions is made to be shorter than a circumferential direction length (W2) of the arc-shaped grooves (W3<W2).

Abstract: The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.

Abstract: A disclosed semiconductor device includes a gate insulation film formed on a silicon substrate and a metal gate electrode formed in the gate insulation film, wherein the gate insulation film includes a first insulation film, a second insulation film that is formed on the first insulation film and has a greater dielectric constant than the first insulation film, and a third insulation film formed on the second insulation film.

Abstract: To efficiently decide input data of an API to be executed and indicate a candidate for an API to be executed, a tool for testing a scenario which sequentially executes a plurality of APIs includes an API test control unit that stores, with the execution of the API, sequence data indicating an execution sequence of the APIs and input and output data in a test information database via an API sequence registering unit. Association data indicating association of input and output data between the APIs is also stored in the test information database via an association registering unit. Responsively, the API test control unit displays a candidate API list indicating one or more candidates for an API to be executed next based on the sequence data, and decides the input data of the API to be executed next based on the association data.

Abstract: There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.

Abstract: Disclosed here is a method of aging a plasma display panel. The aging method of the present invention contains a first aging period and a second aging period. In the first aging period, applying voltage Vd1 to at least any one of the scan electrodes, the sustain electrodes, and the address electrodes suppress self-erase discharge that occurs in the wake of aging voltage generated by application of voltage in which the scan electrodes take a voltage level higher than the sustain electrodes. In the second aging period, applying voltage Vd2 to at least any one of the scan electrodes, the sustain electrodes, and the address electrodes suppress self-erase discharge that occurs in the wake of aging voltage generated by application of voltage in which the sustain electrodes take a voltage level higher than the scan electrodes. The above aging method offers a power-efficient aging process with the aging time accelerated.