Abstract: On a Si substrate 1, i.e., a semiconductor substrate, a gate insulating film 2 is formed, and then a W-based film 3a is formed on the gate insulating film 2 by CVD using a film forming gas including W(CO)6 gas. Then, the film is oxidized under existence of a reducing gas, and the W in the W-based film 3a is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W-based film 3a. Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, and, an impurity diffused region 10 is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.

Abstract: A system for inputting data to a web page that is selectively accessed and displayed through a web browser executing on a computing device includes an electronic scratch pad on the computing device that is configured to identify data entry fields on an accessed web page and to retrieve a label corresponding to any identified data entry field of the web page. The electronic scratch pad records the label and any user input that is input using a user input device to the corresponding data entry field.

Abstract: A computer implemented method determines interest in video portions. A media stream including frames, and a composite rating counter including interest levels are retrieved. Each interest level corresponds to a frame. When viewed at normal playback rate, interest levels associated with the frame are increased by a normal amount. Interest levels associated with the frame are increased or decreased by an augmented amount based on a relative window size compared to the default window size, an order of z-index among all open windows, and a user selection of the frame indicating an interest level. The composite rating counter is updated based on a current count of the interest levels. The updated composite interest level is then stored for future retrieval by a subsequent user.

Abstract: A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film. The gate electrode includes a conductive layer consisting of a nitride of a predetermined metal in contact with the gate insulating film. The conductive layer is formed by stacking a first film consisting of a nitride of the predetermined metal and a second film consisting of the predetermined metal, and diffusing nitrogen from the first film to the second film by solid-phase diffusion.

Abstract: A method, apparatus, and computer program product for supporting creation of a search expression that employs a plurality of words may display a search expression creation support screen comprising a search word field for inputting therein search words and a search expression field for visually displaying, in a nodal form, a search expression that includes the inputted search words, sort the search words, inputted in the search word field, into one or more groups depending on their categories, display, in the search expression field, the search words included in each of the groups as OR-connected nodes, while displaying connections between the groups as AND-connections, and change a search expression in the search expression field in response to a user's operation that has been performed in the search word field or in the search expression field.

Abstract: A semiconductor device includes a structure of a gate electrode/a high-k dielectric insulating film containing aluminum and having a dielectric constant greater than that of a silicon oxide film/the silicon oxide film/a silicon substrate, and is provided with a diffusion layer formed by diffusing an aluminum atom or an aluminum ion to the silicon oxide film or an interface between the silicon oxide film and the silicon substrate by a heat treatment. A laminated film or a mixed film of hafnium oxide and aluminum oxide having a ratio of hafnium and aluminum ranging from about 2:8 to 8:2 is used as the high-k dielectric film. The heat treatment is performed at any temperature from about 500 to 1000° C. for any period of time from about 1 to 100 seconds.

Abstract: A technique capable of reducing threshold voltage and reducing high-temperature heat treatment after forming a gate electrode is provided. An n-type MIS transistor or a p-type MIS transistor is formed on an active region isolated by an element isolation region of a semiconductor substrate. In the n-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a hafnium silicide film. On the other hand, in the p-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a platinum silicide film. Also, the gate electrodes are formed after the activation annealing (heat treatment) for activating impurities implanted into a source region and a drain region.

Abstract: A state switching method includes the steps of: receiving a state switching instruction signal for instructing a local terminal to switch to at least one of two or more states; determining whether to switch the local terminal to the state specified by the above-mentioned state switching instruction signal on the basis of a user setting stored in a memory of the local terminal; and carrying out a control operation of switching the local terminal to the state specified by the above-mentioned state switching instruction signal when, in the above-mentioned determining step, it is determined that the switching of the local terminal to the state specified by the above-mentioned state switching instruction signal will be carried out.

Abstract: In the aging process performed by applying a voltage having an alternating voltage component between a scan electrode and a sustain electrode, an erase discharge occurs in succession to an aging discharge. According to the aging method, an erase discharge-suppressing voltage is applied to at least any one of the scan electrode, the sustain electrode, and the data electrode. Although the erase discharge repeatedly occurs in the wake of the aging discharge, the erase discharge-suppressing voltage suppresses the ones that occur when the scan electrode has voltage level higher than the sustain electrode.

Abstract: To efficiently decide input data of an API to be executed and indicate a candidate for an API to be executed, a tool for testing a scenario which sequentially executes a plurality of APIs includes an API test control unit that stores, with the execution of the API, sequence data indicating an execution sequence of the APIs and input and output data in a test information database via an API sequence registering unit. Association data indicating association of input and output data between the APIs is also stored in the test information database via an association registering unit. Responsively, the API test control unit displays a candidate API list indicating one or more candidates for an API to be executed next based on the sequence data, and decides the input data of the API to be executed next based on the association data.

Abstract: A mechanical seal device, wherein a rotational seal ring (10) and a stationary seal ring are arranged to face to each other between a rotational shaft and a housing fit together, comprising a rotational seal ring (10) connected to said rotational shaft, having a rotational seal surface (11), and having a plurality of arc-shaped grooves (12) arranged on said rotational seal surface to be in a circular shape around an axis center of said rotational shaft, the grooves being sectionalized by partition walls (13); a stationary seal ring having a stationary seal surface facing to the rotational seal surface (11) of said rotational seal ring (10); a spring for pressing said stationary seal ring against said rotational seal ring; and outlet portions formed on said stationary seal surface of said stationary seal ring and capable of connecting with a fluid supply path for supplying a pressure fluid.

Abstract: In an aging process in which a voltage having an alternate voltage component is applied to at least between a scan electrode and a sustain electrode so as to form a discharge dent (sputter dent) on a protecting layer, the aging discharge dent is formed so as to satisfy any one of the following. First, the discharge dent on the scan electrode-side has a width which is narrower than the discharge dent on the side of sustain electrode. Second, the discharge dent on the side of sustain electrode is formed so that the depth of the discharge dent in the area away from a scan electrode paired with a sustain electrode as a display electrode is shallower than the depth of the discharge dent in the area close to counterpart scan electrode.

Abstract: A plasma display panel is provided that includes scan electrodes, sustain electrodes, and address electrodes. A first pulse voltage for the address electrodes or a second pulse voltage for the address electrodes is applied to the address electrodes in an aging step in which aging discharge is performed by alternately applying pulse voltage for the scan electrodes and pulse voltage for the sustain electrodes at least across the scan electrodes and the sustain electrodes. The first pulse voltage has a rising edge timing synchronized with a rising edge timing of the pulse voltage for the scan electrodes and a pulse width smaller than that of the pulse voltage for the scan electrodes. The second pulse voltage has a rising edge timing synchronized with a rising edge timing of the pulse voltage for the sustain electrodes and a pulse width smaller than that of the pulse voltage for the sustain electrodes.

Abstract: In an aging process in which a voltage having an alternate voltage component is applied to at least between a scan electrode and a sustain electrode so as to form a discharge dent (sputter dent) on a protecting layer, the aging discharge dent is formed so as to satisfy any one of the following. First, the discharge dent on the scan electrode-side has a width which is narrower than the discharge dent on the side of sustain electrode. Second, the discharge dent on the side of sustain electrode is formed so that the depth of the discharge dent in the area away from a scan electrode paired with a sustain electrode as a display electrode is shallower than the depth of the discharge dent in the area close to counterpart scan electrode.

Abstract: Security technology for information devices such as cellular phones, personal computers, and the like, and more specifically a technique capable of restricting use of or removing restrictions on the use of information devices with a low-cost configuration. A key system includes a key device and a cellular phone capable of being locked or released from the lock by the key device. An LED of the key device and an LED of the cellular phone are capable of sending data therebetween, and key information is sent from the LED to the LED. The cellular phone is locked or released from the lock based on the key information received by the LED.

Abstract: A gas discharge panel capable of high-speed driving at a low drive voltage, while suppressing the occurrence of write errors in a write period, and a manufacturing method for the same. To achieve this, in the gas discharge panel of the present invention, a secondary gas formed from at least one of carbon dioxide, water vapor, oxygen and nitrogen is induced into discharge spaces 30 evacuated until the residual gas pressure is 0.02 mPa or less, and an He—Xe or Ne—Xe rare gas (discharge gas) is induced into discharge spaces 30. The amount of the secondary gas included within discharge spaces 30 when, for example, carbon dioxide is included therein, is suitably set in terms of both a discharge starting voltage and an electron emission ability, so that the partial pressure of the carbon dioxide is in a range of 0.05 mPa to 0.5 mPa inclusive.

Abstract: A semiconductor device includes a substrate including a semiconductor layer at a surface, a gate insulating film disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating film. The gate electrode includes a conductive layer consisting of a nitride of a predetermined metal in contact with the gate insulating film. The conductive layer is formed by stacking a first film consisting of a nitride of the predetermined metal and a second film consisting of the predetermined metal, and diffusing nitrogen from the first film to the second film by solid-phase diffusion.

Abstract: In conventional methods of correction luminance in displays, it has been necessary to interrupt video display during use in order to carry out correction. This is a problem in that interruptions are not good for workability from the perspective of the user of the image display device. In consideration of this, the present invention realizes a display without non-uniformity in illumination with respect to both initial characteristics and change over time by measuring anode current of an FED and creating a luminance correction memory. In addition, by illuminating arbitrary pixels during video idle periods, capturing the luminance information from the pixels, and renewing a correction memory based on this luminance information, correction for change over time is possible without interrupting video display. Thus, a display device that can maintain high quality images is provided.

Abstract: When aging is performed by applying aging voltage to a data electrode, a scan electrode, and a sustain electrode via respective inductors (301, 401, 302, 402, 303, 403) coupled to the electrodes, frequency of a ringing waveform included in an aging voltage waveform applied to the data electrode is set in a range of ½ to 2 times frequency of a ringing waveform included in an aging voltage waveform applied to the scan electrode. With the method above, the time required for aging is significantly shortened, and the aging with high efficiency in electric power is realized. Instead of using inductors (301, 302, 303) including a coil, controlling the length of lead wires (401, 402, 403) can also obtain desired inductance.

Abstract: In an aging process in which a voltage having an alternate voltage component is applied to at least between a scan electrode and a sustain electrode so as to form a discharge dent (sputter dent) on a protecting layer, the aging discharge dent is formed so as to satisfy any one of the following. First, the discharge dent on the scan electrode-side has a width which is narrower than the discharge dent on the side of sustain electrode. Second, the discharge dent on the side of sustain electrode is formed so that the depth of the discharge dent in the area away from a scan electrode paired with a sustain electrode as a display electrode is shallower than the depth of the discharge dent in the area close to counterpart scan electrode.