Patents by Inventor Koji Dairiki

Koji Dairiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10361222
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: July 23, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
  • Publication number: 20180190677
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Application
    Filed: February 15, 2018
    Publication date: July 5, 2018
    Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
  • Publication number: 20180157394
    Abstract: A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.
    Type: Application
    Filed: January 18, 2018
    Publication date: June 7, 2018
    Inventors: Shunpei YAMAZAKI, Hajime KIMURA, Hideaki KUWABARA, Koji DAIRIKI
  • Patent number: 9941115
    Abstract: A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: April 10, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tomoko Tamura, Eiji Sugiyama, Yoshitaka Dozen, Koji Dairiki, Takuya Tsurume
  • Patent number: 9899419
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: February 20, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
  • Patent number: 9875015
    Abstract: A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: January 23, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hajime Kimura, Hideaki Kuwabara, Koji Dairiki
  • Publication number: 20170025546
    Abstract: A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
    Type: Application
    Filed: October 5, 2016
    Publication date: January 26, 2017
    Inventors: Chiho KOKUBO, Aiko SHIGA, Shunpei YAMAZAKI, Hidekazu MIYAIRI, Koji DAIRIKI, Koichiro TANAKA
  • Patent number: 9525023
    Abstract: One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: December 20, 2016
    Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
    Inventors: Hidekazu Miyairi, Koji Dairiki, Yasuhiro Jinbo, Tomohiro Kimura, Yoshitaka Yamamoto
  • Publication number: 20160336363
    Abstract: A photoelectric conversion element includes a first electrode, a second electrode, a first layer, and a second layer. The first layer is provided between the first electrode and the second electrode. The second layer is provided between the first layer and the second electrode. The first layer contains selenium. The second layer contains In, Ga, Zn, and O. The second layer may contain an In—Ga—Zn oxide. The selenium may be crystalline selenium. The first layer functions as a photoelectric conversion layer. The second layer functions as a hole injection blocking layer. The In—Ga—Zn oxide may have a c-axis aligned crystal.
    Type: Application
    Filed: May 9, 2016
    Publication date: November 17, 2016
    Inventors: Koji DAIRIKI, Shunpei YAMAZAKI
  • Patent number: 9496330
    Abstract: A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: November 15, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Masashi Oota, Koji Dairiki, Masahiro Takahashi
  • Publication number: 20160111451
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Application
    Filed: October 27, 2015
    Publication date: April 21, 2016
    Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
  • Patent number: 9244025
    Abstract: Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: January 26, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daisuke Ohgarane, Koji Dairiki, Masahiro Takahashi, Shunichi Ito, Erika Takahashi
  • Patent number: 9178069
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Grant
    Filed: July 31, 2009
    Date of Patent: November 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
  • Patent number: 9178071
    Abstract: Provided is a method for manufacturing a semiconductor device with fewer masks and in a simple process. A gate electrode is formed. A gate insulating film, a semiconductor film, an impurity semiconductor film, and a conductive film are stacked in this order, covering the gate electrode. A source electrode and a drain electrode are formed by processing the conductive film. A source region, a drain region, and a semiconductor layer, an upper part of a portion of which does not overlap with the source region and the drain region is removed, are formed by processing the upper part of the semiconductor film, while the impurity semiconductor film is divided. A passivation film over the gate insulating film, the semiconductor layer, the source region, the drain region, the source electrode, and the drain electrode are formed. An etching mask is formed over the passivation film.
    Type: Grant
    Filed: September 6, 2011
    Date of Patent: November 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hidekazu Miyairi, Koji Dairiki, Shunpei Yamazaki, Ryo Arasawa
  • Patent number: 9131171
    Abstract: Provided is an image sensor having a pixel includes a photoelectric conversion element; a capacitor which is connected between the photoelectric conversion element; a reset circuit which resets a potential of a node between the photoelectric conversion element and the capacitor; an amplifier circuit which outputs a signal corresponding to the potential of the node; and a switch which controls electrical conduction between the amplifier circuit and a vertical signal line. When the node is brought into an electrically floating state, the potential of the optical signal is stored in the node in a state of being inverted. When an optical signal is detected while the potential is stored in the node, the potential of the node increases in accordance with an output potential of the photoelectric conversion element, and thus the potential of the node corresponds to a difference in potential between the optical signals in different light-receiving periods.
    Type: Grant
    Filed: February 21, 2013
    Date of Patent: September 8, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Aoki, Takayuki Ikeda, Yurika Sato, Koji Dairiki
  • Patent number: 9054206
    Abstract: After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: June 9, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Sachiaki Teduka, Satoshi Toriumi, Makoto Foruno, Yasuhiro Jinbo, Koji Dairiki, Hideaki Kuwabara
  • Publication number: 20150153861
    Abstract: A data processing device with low power consumption is provided. The data processing device includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. The flexible position input portion overlaps with a display portion and includes a first region, a second region facing the first region, and a third region between the first region and the second region. In the case where part of the first region or the second region is held by a user for a certain period, supply of image signals to the part is selectively stopped. Alternatively, a sensing in the part is selectively stopped.
    Type: Application
    Filed: November 24, 2014
    Publication date: June 4, 2015
    Inventors: Shunpei YAMAZAKI, Hajime KIMURA, Hideaki KUWABARA, Koji DAIRIKI
  • Publication number: 20150034947
    Abstract: A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm.
    Type: Application
    Filed: July 28, 2014
    Publication date: February 5, 2015
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Masashi OOTA, Koji DAIRIKI, Masahiro TAKAHASHI
  • Publication number: 20150008321
    Abstract: Provided is a transmission electron diffraction measurement apparatus including an electron gun; a first optical system under the electron gun; a sample chamber under the first optical system; a second optical system under the sample chamber; an observation chamber under the second optical system; a region that emits light by receiving energy from an electron in the observation chamber; and a camera facing the region.
    Type: Application
    Filed: June 16, 2014
    Publication date: January 8, 2015
    Inventors: Daisuke OHGARANE, Koji DAIRIKI, Masahiro TAKAHASHI, Shunichi ITO, Erika TAKAHASHI
  • Patent number: 8902123
    Abstract: To provide a semiconductor device in which wireless communication is performed between devices formed over different substrates and connection defects of wirings are reduced. A first device having a first antenna is provided over a first substrate, a second device having a second antenna which can communicate with the first antenna is provided over a second substrate, and the first substrate and the second substrate are bonded to each other to manufacture a semiconductor device. The first substrate and the second substrate are bonded to each other by bonding with a bonding layer interposed therebetween, anodic bonding, or surface activated bonding.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: December 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koji Dairiki, Konami Izumi