Abstract: To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

Abstract: It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

Abstract: In an inverted staggered thin film transistor, a microcrystalline silicon film and a silicon carbide film are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the silicon carbide film is formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity.

Abstract: In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the pair of silicon carbide films are formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity.

Abstract: A method for manufacturing a microcrystalline semiconductor film having high crystallinity is provided. A method for manufacturing a semiconductor device which has favorable electric characteristics with high productivity is provided. After a first microcrystalline semiconductor film is formed over a substrate, treatment for flattening a surface of the first microcrystalline semiconductor film is performed. Then, treatment for removing an amorphous semiconductor region on a surface side of the flattened first microcrystalline semiconductor film is performed so that a second microcrystalline semiconductor film having high crystallinity and flatness is formed. After that, a third microcrystalline semiconductor film is formed over the second microcrystalline semiconductor film.

Abstract: Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. In view of the above described object, one feature of the invention is to provide the steps of forming a separation layer over an insulating substrate and forming a thin film integrated circuit having a semiconductor film as an active region over the separation layer, wherein the thin film integrated circuit is not separated. There is less limitation on the shape of a mother substrate in the case of using the insulating substrate, when compared with the case of taking a chip out of a circular silicon wafer. Accordingly, reduction in cost of an IC chip can be achieved.

Abstract: Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

Abstract: A photoelectric conversion device having an excellent photoelectric conversion characteristic is provided while effectively utilizing limited resources. A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer, a first electrode, and an insulating layer are formed on the one surface side of the single crystal semiconductor substrate. After bonding the insulating layer to a supporting substrate, the single crystal semiconductor substrate is separated with the fragile layer or its vicinity used as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate.

Abstract: A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

Abstract: It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

Abstract: To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

Abstract: Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. In view of the above described object, one feature of the invention is to provide the steps of forming a separation layer over an insulating substrate and forming a thin film integrated circuit having a semiconductor film as an active region over the separation layer, wherein the thin film integrated circuit is not separated. There is less limitation on the shape of a mother substrate in the case of using the insulating substrate, when compared with the case of taking a chip out of a circular silicon wafer. Accordingly, reduction in cost of an IC chip can be achieved.

Abstract: Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

Abstract: A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

Abstract: A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

Abstract: The present invention provides a method for manufacturing a substrate having a pattern that is capable of controlling the distance between adjacent film patterns, and also provides a method for manufacturing a substrate, particularly, having a pattern with a narrow width and a thickness that is capable of controlling the width between the film patterns. The present invention provides a method for manufacturing a substrate having a conductive film that serves as an antenna with a little variation in inductance and has a large electromotive force, and provides a method for manufacturing a semiconductor device with high yield. After forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon over a substrate, an insulating film, or a conductive film, a composition is printed by the printing method thereover, and is baked to form a film pattern.

Abstract: It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.

Abstract: An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.

Abstract: An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.

Abstract: An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.