Abstract: An electronic device assembly for dense mounting of electronic devices and method of connecting the electronic devices are disclosed. Conductive portions implemented by metal bumps and sealing portions implemented by adhesive seal resin are connected by thermocompress ion at the same time between two electronic devices. This may be repeated between three or more electronic device.

Abstract: A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.

Abstract: A wiring board for high dense mounting comprises at least one layer of interlayer insulator and at least one layer of conductive wiring pattern formed on a base material. The interlayer insulator comprises a polybenzoxazole film. An adhesive layer comprising at least one selected from the group consisting of Ti, Ti-containing compounds and Ni is formed between the polybenzoxazole film and the conductive wiring pattern. The wiring board has a high heat resistance, low dielectric constant, low water absorption degree, low thermal expansion coefficient, and high adhesion between conductors and insulators. The wiring board is also excellent in film strength and shear extensibility, capable of enduring a stress in mounting of a semiconductor device, excellent in reliability, and optimal for high speed and high dense mounting.

Abstract: There is provided a thin film capacitor including (a) a lower electrode, (b) an insulating layer formed burying the lower electrode therein and formed with a via-hole reaching the lower electrode, (c) a dielectric layer formed on an inner sidewall of the via-hole and covering an exposed surface of the lower electrode therewith, and (d) an upper electrode surrounded by the dielectric layer. In accordance with the thin film capacitor, the upper electrode is formed to be buried in the via-hole formed above the lower electrode. Hence, it is possible to prevent short-circuit between the upper and lower electrodes, and degradation of the dielectric layer during fabrication of a thin film capacitor, both of which enhances reliability of a capacitor. In addition, a multi-layered wiring structure could be readily fabricated on the thin film capacitor.

Abstract: A semiconductor package board for mounting thereon a semiconductor chip includes a metal base having an opening for receiving therein the semiconductor chip and a multilayer wiring film layered onto the metal base. The semiconductor chip is flip-chip bonded onto the metal pads disposed on the multilayer wiring film within the opening. The surface of the metal base is flush with the top surface of the semiconductor chip received in the opening. The resultant semiconductor device has a larger number of external pins and a smaller deformation without using a stiffener.

Abstract: The present invention provides a carrier film in which a cover resist layer made of epoxy acrylate resin including a fluorene skeleton is formed on a heat-resistant resin film including a conductive wiring pattern. The carrier film has heat resistance, moisture resistance, and close contact property, as well as chemical resistance in a plating process or the like, and does not warp because contraction in resin hardening is small.

Abstract: A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.

Abstract: A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.

Abstract: There is provided a thin film capacitor including (a) a lower electrode, (b) an insulating layer formed burying the lower electrode therein and formed with a via-hole reaching the lower electrode, (c) a dielectric layer formed on an inner sidewall of the via-hole and covering an exposed surface of the lower electrode therewith, and (d) an upper electrode surrounded by the dielectric layer. In accordance with the thin film capacitor, the upper electrode is formed to be buried in the via-hole formed above the lower electrode. Hence, it is possible to prevent short-circuit between the upper and lower electrodes, and degradation of the dielectric layer during fabrication of a thin film capacitor, both of which enhances reliability of a capacitor. In addition, a multi-layered wiring structure could be readily fabricated on the thin film capacitor.

Abstract: A resin matrix with resistances to alkali and acid includes at least any one of insulative organic particles and insulative composite particles having an organic component and an inorganic component with the total amount of these particles being in the range of 5-50% by volume, wherein the insulative organic particles and the organic component of the insulative composite particles are allowed to be corroded by either alkali or acid, and wherein not less than 90% by volume of the insulative organic particles and insulative component particles have a particle diameter in the range of 1-20 micrometers.

Abstract: An electronic device assembly for dense mounting of electronic devices and method of connecting the electronic devices are disclosed. Conductive portions implemented by metal bumps and sealing portions implemented by adhesive seal resin are connected by thermocompression at the same time between two electronic devices. This may be repeated between three or more electronic device.

Abstract: A resin matrix with resistances to alkali and acid such as a fluorene-containing epoxy acrylate and/or a benzocyclobutene resin includes at least any one of insulative organic particles and insulative composite particles having an organic component and an inorganic component with the total amount of these particles being in the range of 5-50% by volume, wherein the insulative organic particles and the organic component of the insulative composite particles are allowed to be corroded by either alkali or acid, and wherein not less than 90% by volume of the insulative organic particles and insulative composite particles have a particle diameter in the range of 1-20 micrometers.

Abstract: A semiconductor carrier is provided with a through hole bump. The bump is formed by coating a photosensitive adhesive consisting of an epoxy acrylate having a fluorene skeleton or polybenzoxazole over a support substrate having a conductive interconnection pattern, exposing and developing the adhesive for forming a through hole therein, and plating for filling a metal within the through hole. The photosensitive adhesive is preferably heated at 80-160° C. prior to the plating process if it comprises the epoxy acrylate having a fluorene skeleton and at 80-250° C. if it comprises the polybenzoxazole.

Abstract: The present invention provides a carrier film in which a cover resist layer made of epoxy acrylate resin including a fluorene skeleton is formed on a heat-resistant resin film including a conductive wiring pattern. The carrier film has heat resistance, moisture resistance, and close contact property, as well as chemical resistance in a plating process or the like, and does not warp because contraction in resin hardening is small.

Abstract: There is provided a method of forming an electrically conductive wiring pattern, including the steps of patterning a resist on a substrate so that the resist has at least one recess where an electrically conductive wiring is to be formed, the substrate appearing in the recess, the resist being composed of silicon dioxide particles having a diameter of 5 .mu.m or smaller and epoxy acrylate having a fluorene skeleton, etching the resist by plasma-ashing so that the silicon dioxide particles appear on a surface of the resist, forming a metal film over both the resist and the substrate appearing in the recess, and removing the metal film formed on the resist by removing the silicon dioxide particles appearing on a surface of the resist.

Abstract: A novel zirconia sintered body is provided which contains Y.sub.2 O.sub.3 in a solid solution state, and has tetragonal crystal grains oriented at an orientation degree of not higher than 45%. A process for producing the zirconia sintered body is also provided. This zirconium sintered body deteriorates less, and excellent in stability of surface smoothness, and can be produced by a simple process.

Abstract: A supporting substrate for mounting a semiconductor bare chip thereon has a surface provided with electrode pads thereon and bumps on the electrode pads. A sealing resin film is selectively formed on the surface of the supporting substrate, except over the bumps, and further the sealing resin film has at least a thermosetting property. The electrode pads of the above supporting substrate and the bumps of the semiconductor bare chip are bonded by a thermo-compression bonding method whereby the sealing between the supporting substrate and the semiconductor bare chip is simultaneously conducted.

Abstract: A zirconia fine powder consisting of primary particles having a BET specific surface area of from 40 to 200 m.sup.2 /g and a mean particle size of at most 0.1 .mu.m as measured by an electron microscope, wherein the ratio of the mean particle size as measured by an electron microscope to a mean particle size calculated from the BET specific surface area, is at least 0.9.

Abstract: A resin-encapsulated semiconductor device includes a semiconductor chip consisting of a semiconductor element having metal bumps and metal leads electrically connected to the metal bumps and having a surface-treated layer obtained by a surface treatment, and a resin film stacked on the outer side of the semiconductor chip and tightly adhered to the semiconductor chip by a heat treatment and pressurization treatment.

Abstract: A novel optical fiber connector part is provided which comprises a ferrule having a capillary hole for holding an optical fiber, the ferrule being formed from a zirconia-alumina composite oxide containing yttria at a content ranging from 2 to 4 mol % in zirconia. In the optical fiber connector part, a sleeve for connecting and holding the ferrule may be formed from zirconia and/or a zirconia-alumina composite oxide. A process for producing the optical fiber connector part is provided wherein the granular zirconia-alumina composed of a particulate zirconia-alumina mixture having an average particle diameter of not more than 1 .mu.m is used as raw material. The granular zirconia-alumina preferably contains alumina at a content ranging from 0.1% to 50% by weight. The process comprises spray-drying a slurry containing a particulate zirconia-alumina mixture having an average particle diameter of not more than 1 .mu.m.