Abstract: A semiconductor device of the present invention includes: a laminate structure, including a semiconductor chip, partially sealed with a resin; and a stress relief section for relieving a stress during resin sealing, provided as a convex section including a plain top surface on an uppermost section of the laminate structure, the stress relief section being provided in an annular shape on a peripheral region of the uppermost section so as to come into contact with the sealing resin. This makes it possible to improve the manufacturing yield of the semiconductor device in which the member of the uppermost section is exposed.

Abstract: A permanent magnet generator is provided that is not bulky and does not impede wind capture by a wind turbine. The permanent magnet generator includes a generator shaft; at least three rotors secured with the generator shaft, each rotor including a plate-shaped structure having a permanent magnet attached thereto, each plate-shaped structure being disposed in the longitudinal direction of the generator shaft; and a stator, including a plate-shaped structure with a stator coil of a wound copper wire disposed in at least two gaps formed by the rotors and evenly-spaced apart from the generator shaft. The rotors and stators are disposed alternately in the longitudinal direction of the generator shaft, with a total of not less than five stages. Furthermore, a wind power generator obtained by installing a propeller on the shaft of this permanent magnet generator is provided.

Abstract: It is an object of the present invention to provide a rare earth magnet that will not decompose due to hydrogen embrittlement when used in a hydrogen gas atmosphere, and furthermore, does not pose the risk of contaminating a reaction bath with the surface treated film of the magnet. The present invention provides a sealed rare earth magnet comprising: a rare earth magnet; and a case of aluminum or aluminum alloy, wherein the case covers entirety of the rare earth magnet and is sealed by HIP; and the methods for manufacturing the same.

Abstract: A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form first, second, and third magnetic fields within the peripheral plasma region. The first magnetic field includes magnetic force lines extending along a vertical first cylindrical plane. The second magnetic field includes magnetic force lines extending along a vertical second cylindrical plane located inside the first cylindrical plane. The third magnetic field includes magnetic force lines extending along vertical radial planes located between the first and second cylindrical planes.

Abstract: It is an object of the present invention to provide a rare earth magnet that will not decompose due to hydrogen embrittlement when used in a hydrogen gas atmosphere, and furthermore, does not pose the risk of contaminating a reaction bath with the surface treated film of the magnet. The present invention provides a sealed rare earth magnet comprising: a rare earth magnet; and a case of aluminum or aluminum alloy, wherein the case covers entirety of the rare earth magnet and is sealed by HIP; and the methods for manufacturing the same.

Abstract: In a rotating machine comprising a rotor including a rotor core and a plurality of permanent magnet segments, and a stator including a stator core and windings, the permanent magnet segment is obtained by disposing a powder comprising an R2 oxide, R3 fluoride or R4 oxyfluoride on a sintered magnet body of R1—Fe—B composition, wherein R1 to R4 are rare earth elements, and heat treating the powder-covered magnet body. The permanent magnet segment of a cross-sectional shape which is tapered from the center toward opposed ends has a higher coercive force at the ends than at the center.

Abstract: A permanent magnet has a D-shaped cross section including an arcuate top surface (22), a flat bottom surface (24), and side surfaces (26, 28). Provided that a plurality of permanent magnets are circumferentially arranged so that a great circle (S) circumscribes the apexes (P) on the arcuate top surfaces (22), the top surface (22) includes a central region which delineates an arc of a small circle (T) off-centered from the great circle, and end regions (22a, 22b) which are positioned outside the small circle (T) and inside the great circle (S).

Abstract: A surface processing method includes supporting a wafer in a vacuum chamber and generating a plasma in a confined portion of the chamber over only a selected portion of the wafer to thereby perform a surface processing treatment (e.g., an ashing process) on the selected portion of the wafer. While the plasma is being generated, the wafer and the confined portion of the chamber are displaced with respect to one another to thereby perform the surface processing treatment on a second selected portion of the wafer.

Abstract: A method of fabricating a semiconductor device begins by forming a lower interconnection dielectric on a substrate and forming at least one active or passive device in the lower interconnection dielectric. An etch stop layer is formed on the lower interconnection dielectric and an interconnect stack layer is formed on the etch stop layer. At least one interconnect trench structure and at least one crack stop trench are etched in the interconnect stack layer while maintaining electrical isolation between the interconnect structure and the crack stop trench.

Abstract: A method is provided for fabricating a damascene interconnection. The method begins by forming on a substrate a porous dielectric layer and imparting a porogen material into an upper portion of the porous dielectric layer to define a less porous dielectric sublayer within the dielectric layer. A capping layer is formed on the less porous dielectric sublayer and a resist pattern is formed over the capping layer to define a first interconnect opening. The capping layer and the dielectric layer are etched through the resist pattern to form the first interconnect opening. The resist pattern is removed and an interconnection is formed by filling the first interconnect opening with conductive material. The interconnection is planarized to remove excess conductive material.

Abstract: A method and apparatus is provided for fabricating a damascene interconnection. The method begins by forming on a substrate an organosilicate dielectric layer, a capping layer on the organosilicate dielectric layer, and a resist pattern over the capping layer to define a first interconnect opening. The capping layer is etched through the resist pattern using a first etchant. The resist pattern is removed after etching the capping layer. The dielectric layer is etched through the capping layer using a second etchant different from the first etchant to form the first interconnect opening. An interconnection is completed by filling the first interconnect opening with conductive material.

Abstract: A rare earth permanent magnet is prepared from a sintered magnet body of a R1—Fe—B composition wherein R1 is a rare earth element inclusive of Y and Sc, by forming a plurality of slits in a surface of the magnet body, disposing a powder on the magnet body surface, the powder comprising an oxide of R2, a fluoride of R3, or an oxyfluoride of R4 wherein each of R2, R3, and R4 is a rare earth element, and heat treating the magnet body and the powder below the sintering temperature in vacuum or in an inert gas.

Abstract: In a semiconductor device in which a second semiconductor chip is layered on a first semiconductor chip mounted on a substrate, a mounting-use bonding layer being formed on a reverse surface of the second semiconductor chip with respect to a circuit formation thereof, the mounting-use bonding layer functions as a bonding agent and as a supporting member for supporting protruded part of the second semiconductor chip, which is protruded from an outer edge of the first semiconductor chip. In this semiconductor device, it is possible to bond the second semiconductor chip and the substrate stably by wire bonding.

Abstract: In a semiconductor device, two or more semiconductor chips are stacked, a first semiconductor chip has electrical contact pads at such positions that form a mirror image of electrical contact pads provided on a second semiconductor chip; and the electrical contact pads on the first semiconductor chip are positioned opposite to and connected to the corresponding electrical contact pads on the second semiconductor chip. Thus, semiconductor chips can be stacked stably. The semiconductor device is reduced in thickness, and a method of stacking semiconductor chips is offered.

Abstract: In one aspect, the present invention provides electronic devices that comprise a doped semiconductor shared contact between (a) a gate conductor region of at least one transistor and (b) a source/drain diffusion region of at least one transistor. One specific example of such as shared contact, among many others, is a doped SiGe shared contact between (a) a gate conductor region shared by an N-channel MOSFET and a P-channel MOSFET and (b) a drain diffusion region of an N-channel MOSFET or of a P-channel MOSFET.

Abstract: Disclosed is a plasma processing apparatus and a plasma processing method. A substrate to be processed in accommodated in a vacuum chamber within which a plasma generator is provided so as to generate plasma for use in performing plasma processing on the substrate. Outside the vacuum chamber provided is a magnetic field generator for generating a multi-pole magnetic field at the periphery of the substrate. The magnetic field generator comprises an inner ring-shaped magnetic field generating portion and an outer ring-shaped magnetic field generating portion, both of which are provided outside the vacuum chamber in a concentric relationship with the vacuum chamber and are independently rotatable with each other.

Abstract: To reduce the cogging torque of servomotors, electric power steering motors, and others, there is provided a permanent magnet motor comprising: a rotor 10 comprising a rotor yoke 11 and a plurality of permanent magnets (M1-M10); and a stator 20 comprising a stator yoke 22, salient magnetic poles 21, and armature windings 23, wherein at least one of the permanent magnets is disposed in an adjustment position that is displaced from a corresponding reference position in at least one of the circumferential, radial, and axial directions of the rotor yoke, and the plurality of permanent magnets excluding the permanent magnet disposed in the adjustment position is disposed in the reference positions, and wherein the adjustment position is set so that the permanent magnet motor in which at least one of the plurality of permanent magnets is disposed in the adjustment position has a smaller cogging torque than a permanent magnet motor in which all of the plurality of permanent magnets are disposed in the reference posi

Abstract: Provided is a linear motor for use in a machine tool having high positioning accuracy. A linear motor 10 for use in a machine tool comprises: a stator 13 comprising a plurality of permanent magnets 12 which are arranged on both faces of a plate-like yoke 11 at equal intervals in a direction in which a mover moves, wherein the permanent magnets have the same shape, are magnetized in a direction perpendicular to the faces of the yoke 11, and an adjacent permanent magnet 12 has a different magnetization orientation; and a pair of movers 16 comprising armature cores 14 wound with armature coils 15 which are opposed to rows of the permanent magnets 12 provided on both the faces of the plate-like yoke 11 such that central axes of the armature cores 15 are parallel to the magnetization direction of the permanent magnets 12.

Abstract: The invention is a linear motor that improves the processing speed of machine tools and is also a linear motor that can improve the thrust in order to achieve high acceleration. More specifically, the invention is a linear motor for use in a machine tool comprising linear motor units, each unit comprising a stator in which a plurality of permanent magnets having the same shape are mounted on both faces of a plate-like yoke at even intervals such that the permanent magnets have polarities being perpendicular to a direction in which a pair of movers move and alternating in the moving direction; and the movers in which armature cores wound with armature coils are disposed such that the armature cores are opposed to the rows of the permanent magnets on the both faces of the stator, wherein the linear motor units are disposed in parallel.

Abstract: The invention is a linear motor that improves the processing speed of machine tools is also a linear motor with significantly reduced cogging force, with which high-speed and high-accuracy processing can be realized. More specifically, the invention is a linear motor for use in a machine tool comprising a stator in which a plurality of permanent magnets having the same shape are mounted on both faces of a plate-like yoke at even intervals such that the permanent magnets have polarities being perpendicular to a direction in which a pair of movers move and alternating in the moving direction; the movers in which armature cores wound with armature coils are disposed such that the armature cores are opposed to the rows of the permanent magnets on the both faces of the stator; and magnetic cores that are disposed on both ends of the movers such that the distance between the magnetic cores and the rows of the permanent magnets is longer than that between the armature cores and the rows of the permanent magnets.