Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Abstract: A display device operating at high speed is provided. The display device includes a pixel provided with a first memory circuit, a second memory circuit, and a display unit, in which the first memory circuit and the second memory circuit are electrically connected to one electrode of the display unit. The operation of the display device includes a first period of writing first image data to the first memory circuit and writing second image data to the second memory circuit, a second period of supplying a first potential to the first memory circuit, a third period of displaying a first image corresponding to the first image data, a fourth period of setting a potential of the one electrode of the display unit to a second potential, a fifth period of supplying the first potential to the second memory circuit, and a sixth period of displaying a second image corresponding to the second image data.

Abstract: A display apparatus that operates at high speed is provided. The display apparatus includes a display portion provided with a pixel, and the display portion has a function of displaying a first-color image and a second-color image. A first period in which first image data and first data are written to the pixel, a second period in which the first-color image corresponding to the first image data is displayed on the display portion, a third period in which second image data is generated in the pixel on the basis of the first image data and the first data, and a fourth period in which the second-color image corresponding to the second image data is displayed on the display portion are included.

Abstract: A liquid crystal display device with a high aperture ratio is provided. The display device includes a transistor, a first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, a pixel electrode, a common electrode, and a liquid crystal layer in a pixel. The first insulating layer is positioned over a channel formation region of the transistor. The first conductive layer is positioned over the first insulating layer. The second insulating layer is positioned over the transistor, the first insulating layer, and the first conductive layer. The pixel electrode is positioned over the second insulating layer, the third insulating layer is positioned over the pixel electrode, the common electrode is positioned over the third insulating layer, and the liquid crystal layer is positioned over the common electrode. The common electrode includes a region overlapping with the first conductive layer with the pixel electrode positioned therebetween.

Abstract: A thin film manufacturing apparatus capable of forming thin films with high uniformity is provided. A thin film manufacturing apparatus capable of controlling various kinds of set conditions during thin film formation is provided. The thin film manufacturing apparatus includes a treatment chamber, a gas supply means, an evacuation means, an electric power supply means, an arithmetic portion, and a control device; the gas supply means supplies gas into the treatment chamber; the evacuation means adjusts a pressure in the treatment chamber; the electric power supply means applies voltage between electrodes provided in the treatment chamber; the arithmetic portion has a function of performing detection of an abnormal state and inference with the use of a neural network during thin film formation; and the control device controls various kinds of set conditions in accordance with results of the detection and the inference during the thin film formation.

Abstract: A liquid crystal display device comprising a backlight and a pixel portion including first to 2n-th scan lines, wherein, in a first case of expressing a color image, first pixels controlled by the first to n-th scan lines are configured to express a first image using at least one of first to third hues supplied in a first rotating order, and second pixels controlled by the (n+1)-th to 2n-th scan lines are configured to express a second image using at least one of the first to third hues supplied in a second rotating order, wherein, in a second case of expressing a monochrome image, the first and second pixels controlled by the first to 2n-th scan lines are configured to express the monochrome image by external light reflected by the reflective pixel electrode, and wherein the first rotating order is different from the second rotating order.

Abstract: A display device that achieves both high-accuracy sensing by a touch sensor unit and smooth input using the touch sensor unit is provided. The display device includes a display unit and the touch sensor unit. The touch sensor unit performs touch sensing operation at a different timing from display image rewriting by the display unit, whereby the high-accuracy sensing can be achieved. The display unit has a function of rewriting a display image only in a region that needs to be rewritten. In the case where the entire display region is not necessarily rewritten, the time for the sensing operation by the touch sensor unit can be lengthened, whereby the smooth input can be achieved.

Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a display region, a first functional layer, and a second functional layer. The display region includes a pixel, and the pixel includes a display element and a pixel circuit. The first functional layer includes the pixel circuit, a scan line, and a first connection portion. The display element is electrically connected to the pixel circuit, and the pixel circuit is electrically connected to the scan line. The second functional layer includes a region overlapping with the first functional layer, the second functional layer includes a driver circuit and a wiring, and the driver circuit is provided so that the pixel circuit is positioned between the driver circuit and the display element. The wiring is electrically connected to the scan line at the first connection portion, and the wiring is electrically connected to the driver circuit.

Abstract: A highly visible display device is provided. The display device includes a transistor, a first conductive layer, a second conductive layer, and a third conductive layer. The channel width of the transistor is greater than or equal to 30 ?m and less than or equal to 1000 ?m. The transistor includes 2 to 50 semiconductor layers, each of which includes a first region, a second region, and a channel formation region. The channel formation region has a region overlapping overlaps with the first conductive layer. The first region overlaps with the second conductive layer and does not overlap with the first conductive layer. The second region overlaps with the third conductive layer and does not overlap with the first conductive layer. The third conductive layer has a function of transmitting visible light, and the second region and the third conductive layer in a stacked state have a function of transmitting visible light.

Abstract: A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.

Abstract: A display device in which high voltage can be applied to a display element is provided. A display element includes a pixel provided with a display element including a pixel electrode and a common electrode, and the pixel is electrically connected to a first data line and a second data line. Supply of a first potential to the pixel through the first data line and supply of a second potential to the pixel through the second data line are performed concurrently, and then a third potential is supplied to the pixel through the second data line, whereby the first potential held in the pixel is changed to a fourth potential, and the fourth potential is applied to the pixel electrode. Here, the second potential is a potential calculated based on the first potential. When the value of the second potential is less than or equal to a potential applied to the common electrode, the third potential is higher than the potential applied to the common electrode.

Abstract: An object of the present invention is to provide a display device with high display quality. The display device of the present invention includes a pixel and a source driver circuit. The pixel includes first and second transistors (21, 22), a capacitor (25), and a display element (26). The source driver circuit is electrically connected to first and second wirings (31, 32). The first wiring (31) is electrically connected to one electrode of the capacitor 25 and one electrode of the display element (26) through the first transistor (21). The second wiring (32) is electrically connected to the other electrode of the capacitor (25) and the other electrode of the display element (26) through the second transistor (22).

Abstract: A secondary battery control system that conducts abnormality detection while predicting other parameters (internal resistance, SOC, and the like) with high accuracy is provided. A difference between an observation value (voltage) at a certain point in time and a voltage that is estimated using a prior-state variable is sensed. A threshold voltage is set in advance, and from the voltage difference that is sensed, a sudden abnormality, specifically a micro-short circuit or the like is detected. Furthermore, it is preferable that detection be performed by using a neural network to learn data on voltage difference in a time series and determine abnormality or normality.

Abstract: A display apparatus in which a high voltage can be supplied to a display device is provided. The display apparatus includes a data generation circuit, a source driver circuit, and a pixel. The source driver circuit is electrically connected to the pixel through first and second wirings functioning as signal lines. The pixel includes a display device that is a liquid crystal device, a potential of one electrode of the display device can be a potential of the first wiring, and a potential of the other electrode of the display device can be a potential of the second wiring. The image data generation circuit has a function of generating digital image data including first and second data. In the case where image data corresponding to the digital image data is supplied to the pixel, one of the first and second wirings is made to have a potential corresponding to first data, and the other of the first and second wirings is made to have a potential corresponding to the first data.

Abstract: A semiconductor device that reduces variations in the characteristics of driving transistors and corrects image data is provided. The semiconductor device includes an image data retention portion, a correction data retention portion, a driver circuit portion, a display element, and a threshold voltage correction circuit portion. The image data retention portion has a function of retaining first image data, and the correction data retention portion has a function of retaining correction data, and a function of generating second image data corresponding to the first image data and the correction data when the first image data is retained in the image data retention portion. The driver circuit portion has a function of generating a current corresponding to the second image data and feeding the current to the display element, and the threshold voltage correction circuit portion has a function of correcting a threshold voltage of a driving transistor in the driver circuit portion.

Abstract: A display device capable of improving image quality is provided. A first pixel circuit and a second pixel circuit are included; a memory node is provided in each pixel circuit and a first signal can be retained in the memory node. The first signal is added to a second signal by capacitive coupling, and then can be supplied to a display element. Thus, the display device can display a corrected image. Furthermore, the first pixel circuit and the second pixel circuit share a signal line, whereby the aperture ratio of a pixel can be increased.

Abstract: To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n?3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

Abstract: A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.