Abstract: A semiconductor device comprising a semiconductor substrate having a recess whose depth is not more than 6 nm, a source region and a drain region which are formed in a surface region of the semiconductor substrate so as to sandwich the recess, each of the source region and the drain region being constituted of an extension region and a contact junction region, a gate insulating film formed between the source region and the drain region in the semiconductor substrate, and a gate electrode formed on the gate insulating film.

Abstract: Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.

Abstract: A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.

Abstract: The present invention provides a sensor and a method of producing the same, which makes an electrical connection condition between an electrode terminal section of a detection element and a metallic terminal member good. The sensor includes a lead frame (metallic terminal member) that changes a support condition of supporting an element abutment section for contact with a detection element on a frame main body section, into a one-point support or a two-point support. At a first-half stage of a work for assembly of the lead frame and the detection element, the element abutment section is put in a one-point support condition relative to the frame main body section and the lead frame produces a relatively smaller resilient force, such that it becomes possible to prevent an excessively large pressure from being applied to the detection element.

Abstract: A gas sensor including a detection element having a detection portion; a metal shell that surrounds the detection element so as to expose the detection portion to a measured atmosphere; an outer tube that is fixed to the metal shell so as to cover a rear end side of the detection element; and a seal member that is contained inside the outer tube, the seal member having a lead wire insertion hole and a through hole that penetrates in the axial direction; a tubular holding member made of a resin having a lower coefficient of thermal expansion than the seal member, the tubular holding member being held inside the through hole, the tubular holding member having a ventilation hole; and a filter that covers the ventilation hole, the filter being joined to the holding member, the filter blocking water from passing therethrough, and the filter having air permeability.

Abstract: A semiconductor device includes an isolation region, a semiconductor element region defined by the isolation region, and having a channel forming portion and a recessed portion, the recessed portion being formed between the isolation region and the channel forming portion, and an epitaxial semiconductor portion formed in the recessed portion, wherein the semiconductor element region has a wall portion between the isolation region and the epitaxial semiconductor portion.

Abstract: A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.

Abstract: A semiconductor device manufacturing method has forming a metal film containing platinum by depositing a metal on a source/drain diffusion layer primarily made of silicon formed on a semiconductor substrate and on a device isolation insulating film; forming a silicide film by silicidation of an upper part of the source/drain diffusion layer by causing a reaction between silicon in the source/drain diffusion layer and the metal on the source/drain diffusion layer by a first heating processing; forming a metal oxide film by a oxidation processing to oxidize selectively at least a surface of the metal film on the device isolation insulating film; increasing the concentration of silicon in the silicide film by a second heating processing; and selectively removing the metal oxide film and an unreacted part of the metal film on the device isolation insulating film.

Abstract: A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y?1E-5exp(21541/T).

Abstract: A semiconductor device includes a dielectric film and gate electrode that are stacked on a substrate, sidewalls formed to cover the side surfaces of the electrode and dielectric film, and SiGe films formed to sandwich the sidewalls, electrode and dielectric film, filled in portions separated from the sidewalls, having upper portions higher than the surface of the substrate and having silicide layers formed on regions of exposed from the substrate. The lower portion of the SiGe film that faces the electrode is formed to extend in a direction perpendicular to the surface of the substrate and the upper portion is inclined and separated farther apart from the gate electrode as the upper portion is separated away from the surface of the substrate. The surface of the silicide layer of the SiGe film that faces the gate electrode is higher than the channel region.

Abstract: A semiconductor device includes: a layer provided on or above a semiconductor substrate, having an opening, and containing Si and Ge; and a gate provided at a position corresponding to the opening. It is possible to provide a semiconductor device and a manufacturing method of the same which realize easy control of a recess amount and reduction in damage at the time of the recessing.

Abstract: Disclosed is a method of manufacturing a semiconductor device, comprising forming a metal compound film directly or indirectly on a semiconductor substrate, forming a metal-containing insulating film consisting of a metal oxide film or a metal silicate film by oxidizing the metal compound film, and forming an electrode on the metal-containing insulating film.

Abstract: A semiconductor device according to an embodiment of the present invention includes a substrate, a gate insulation film formed on the substrate, a gate electrode formed on the gate insulation film, sidewall insulation films provided on side surfaces of the gate electrode, and stress application layers embedded in source and drain regions located, on a surface of the substrate, at a position which sandwiches the gate electrode, and applying stress to a channel region located under the gate insulation film in the substrate, a height of upper ends of interfaces between the substrate and the stress application layers being higher than a height of a lower end of an interface between the substrate and the gate insulation film.

Abstract: Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.

Abstract: The present invention provides a sensor capable of maintaining an electrical connection between the lead frame and an electrode terminal section of the detection element even when an inadequate external force is applied to a lead frame and a sensor production method capable of preventing the lead frame from buckling and being deformed into an inadequate shape. The lead frame (second lead frame) can inhibit movement of a second frame main body section axially toward a rear end side through engagement of a third locking surface of a second locking section with a second locking groove and can inhibit the second frame main body section from going apart from an inner surface of an insertion hole through engagement of a fourth locking surface of the second frame locking section, which faces an element engagement section side.

Abstract: The present invention provides a sensor capable of maintaining an electrical connection between the lead frame and an electrode terminal section of the detection element even when an inadequate external force is applied to a lead frame and a sensor production method capable of preventing the lead frame from buckling and being deformed into an inadequate shape. The lead frame (second lead frame) can inhibit movement of a second frame main body section axially toward a rear end side through engagement of a third locking surface of a second locking section with a second locking groove and can inhibit the second frame main body section from going apart from an inner surface of an insertion hole through engagement of a fourth locking surface of the second frame locking section, which faces an element engagement section side.

Abstract: Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.

Abstract: A gas sensor where breakage of a separator can be prevented even if impact is applied to an outer sleeve from outside and the separator can be stably held in the outer sleeve. A separator (82) is received in an outer sleeve (44) without contact with the inner circumferential surface of the outer sleeve (44), and the separator (82) is held in contact with a front end surface (52) of an elastic seal member (50) and urged toward the rear end. At that time, the separator (82) is held between the urging metal piece (200) and the elastic seal member (50) while being urged toward the elastic seal member (50). The urging metal piece (200) is located around a front-end-side portion (301) of the separator (82) and, with effect of a deformed portion (205) of the outer sleeve (44), the urging metal piece (200) is deformed so as to urge the separator (82) toward the rear end.

Abstract: In a method of manufacturing a sensor, firstly, a plate-type detection element is inserted through an element-insertion through-hole of a first powder-compacted ring. Secondly, a flange section including at least the first powder-compacted ring is integrally assembled to the plate-type detection element, applying axially compressive pressure to the first powder-compacted ring so as to compressively deform the first powder-compacted ring such that the cross-sectional area of the element-insertion through-hole is reduced. Thirdly, the flange section is engaged, directly or via an intermediate member, with the stepped portion of the metallic shell at the time of disposing of the plate-type detection element in the through-hole of the metallic shell. A sensor prepared by the method is also disclosed.

Abstract: A semiconductor device has plural columnar gate electrodes for plural MOSFETs formed in a row separately on a semiconductor substrate, and a semiconductor region which is formed in a part between the neighboring two columnar gate electrodes of the plural columnar gate electrodes to form a channel of the MOSFETs.