Abstract: A sensor having a terminal connection structure in which an elongated sensor element (21) is inserted, from its rear end through relative movement, into a metallic-terminal-member retainer. Metallic terminal members (51) are elastically deformed and pressed against corresponding electrode terminals (25) formed on side surfaces (26) of the sensor element. A chamfer (28) is formed on a rear edge of sensor element (21). Rear ends (25b) of the electrode terminals (25) are biased from the chamfer (28) toward a front end of the element (21). A flat surface (26b) is present between the rear ends (25b) of the electrode terminals (25) and a front end (28a) of the chamfer (28). During insertion of the element (21), a large force generated when the metallic terminal members (51) pass over the chamfer (28) is not directly applied to the rear ends (25b) of the electrode terminals (25), thereby preventing damage to the electrode terminals (25).

Abstract: In a method of manufacturing a sensor, firstly, a plate-type detection element is inserted through an element-insertion through-hole of a first powder-compacted ring. Secondly, a flange section including at least the first powder-compacted ring is integrally assembled to the plate-type detection element, applying axially compressive pressure to the first powder-compacted ring so as to compressively deform the first powder-compacted ring such that the cross-sectional area of the element-insertion through-hole is reduced. Thirdly, the flange section is engaged, directly or via an intermediate member, with the stepped portion of the metallic shell at the time of disposing of the plate-type detection element in the through-hole of the metallic shell. A sensor prepared by the method is also disclosed.

Abstract: A semiconductor device includes: a layer provided on or above a semiconductor substrate, having an opening, and containing Si and Ge; and a gate provided at a position corresponding to the opening. It is possible to provide a semiconductor device and a manufacturing method of the same which realize easy control of a recess amount and reduction in damage at the time of the recessing.

Abstract: A semiconductor device includes a semiconductor region, a source region, a drain region, a source extension region a drain extension region, a first gate insulation film, a second gate insulation film, and a gate electrode. The source region, drain region, source extension region and drain extension region are formed in a surface portion of the semiconductor region. The first gate insulation film is formed on the semiconductor region between the source extension region and the drain extension region. The first gate insulation film is formed of a silicon oxide film or a silicon oxynitride film having a nitrogen concentration of 15 atomic % or less. The second gate insulation film is formed on the first gate insulation film and contains nitrogen at a concentration of between 20 atomic % and 57 atomic %. The gate electrode is formed on the second gate insulation film.

Abstract: A semiconductor device includes an isolation region, a semiconductor element region defined by the isolation region, and having a channel forming portion and a recessed portion, the recessed portion being formed between the isolation region and the channel forming portion, and an epitaxial semiconductor portion formed in the recessed portion, wherein the semiconductor element region has a wall portion between the isolation region and the epitaxial semiconductor portion.

Abstract: There is provided a semiconductor device including a substrate, a device isolation insulating film formed on the substrate, a gate electrode formed on the substrate, a gate wiring layer formed in the device isolation insulating film and connected to the gate electrode, source and drain electrodes arranged on the substrate to face each other via the gate electrode, and an insulating film covering bottom and side surfaces of each of the gate electrode and the gate wiring layer, wherein the gate, source and drain electrodes and gate wiring layer have upper surface levels equal to or lower than that of the device isolation insulating film.

Abstract: A gas sensor where breakage of a separator can be prevented even if impact is applied to an outer sleeve from outside and the separator can be stably held in the outer sleeve. A separator (82) is received in an outer sleeve (44) without contact with the inner circumferential surface of the outer sleeve (44), and the separator (82) is held in contact with a front end surface (52) of an elastic seal member (50) and urged toward the rear end. At that time, the separator (82) is held between the urging metal piece (200) and the elastic seal member (50) while being urged toward the elastic seal member (50). The urging metal piece (200) is located around a front-end-side portion (301) of the separator (82) and, with effect of a deformed portion (205) of the outer sleeve (44), the urging metal piece (200) is deformed so as to urge the separator (82) toward the rear end.

Abstract: Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.

Abstract: The present invention provides a sensor and a method of producing the same, which makes an electrical connection condition between an electrode terminal section of a detection element and a metallic terminal member good. The sensor includes a lead frame (metallic terminal member) that changes a support condition of supporting an element abutment section for contact with a detection element on a frame main body section, into a one-point support or a two-point support. At a first-half stage of a work for assembly of the lead frame and the detection element, the element abutment section is put in a one-point support condition relative to the frame main body section and the lead frame produces a relatively smaller resilient force, such that it becomes possible to prevent an excessively large pressure from being applied to the detection element.

Abstract: There is provided a semiconductor device including a substrate, a device isolation insulating film formed on the substrate, a gate electrode formed on the substrate, a gate wiring layer formed in the device isolation insulating film and connected to the gate electrode, source and drain electrodes arranged on the substrate to face each other via the gate electrode, and an insulating film covering bottom and side surfaces of each of the gate electrode and the gate wiring layer, wherein the gate, source and drain electrodes and gate wiring layer have upper surface levels equal to or lower than that of the device isolation insulating film.

Abstract: A semiconductor device includes a semiconductor substrate which has a cavity and has a source region, a drain region, and a channel region above the cavity, a gate electrode which is formed on the channel region with a gate insulating film interposed between the gate electrode and the channel region, and a stress generating film which has a first portion formed on the upper surface of the cavity and which gives a strain to the channel region.

Abstract: The present invention provides a sensor capable of maintaining an electrical connection between the lead frame and an electrode terminal section of the detection element even when an inadequate external force is applied to a lead frame and a sensor production method capable of preventing the lead frame from buckling and being deformed into an inadequate shape. The lead frame (second lead frame) can inhibit movement of a second frame main body section axially toward a rear end side through engagement of a third locking surface of a second locking section with a second locking groove and can inhibit the second frame main body section from going apart from an inner surface of an insertion hole through engagement of a fourth locking surface of the second frame locking section, which faces an element engagement section side.

Abstract: Preparing a stencil mask comprising a silicon thin film in which an opening for selectively irradiating charged particles to a semiconductor substrate is provided and whose irradiation surface on which the charged particles are irradiated is implanted with an impurity, and selectively irradiating charged particles to the semiconductor substrate using the stencil mask which is opposingly arranged on the semiconductor substrate.

Abstract: A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide, a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide, and a work function of the first gate electrode film being lower than that of the second gate electrode film.

Abstract: A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiy film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0?y<1.

Abstract: A gas sensor 100 includes: a cylindrical metal shell 110; a gas detection element 120; a cylindrical sleeve 170 at least partially located inside the metal shell 110, and an axial hole 170c penetrating through the sleeve and accommodating the gas detection element 120 therein; and a connector 180 joined to a rear end portion of the gas detection element 120 and spaced apart from the sleeve 170, the connector 180 including a plurality of connector terminal portions 182 to 186 electrically connected to corresponding electrode terminal portions 125 to 129.

Abstract: A sensor having a terminal connection structure in which an elongated sensor element (21) is inserted, from its rear end through relative movement, into a metallic-terminal-member retainer. Metallic terminal members (51) are elastically deformed and pressed against corresponding electrode terminals (25) formed on side surfaces (26) of the sensor element. A chamfer (28) is formed on a rear edge of sensor element (21). Rear ends (25b) of the electrode terminals (25) are biased from the chamfer (28) toward a front end of the element (21). A flat surface (26b) is present between the rear ends (25b) of the electrode terminals (25) and a front end (28a) of the chamfer (28). During insertion of the element (21), a large force generated when the metallic terminal members (51) pass over the chamfer (28) is not directly applied to the rear ends (25b) of the electrode terminals (25), thereby preventing damage to the electrode terminals (25).

Abstract: A method for annealing a semiconductor substrate by light irradiation, includes depositing a translucent film with a predetermined thickness on a semiconductor substrate. The translucent film has a refractive index that is smaller than that of the semiconductor substrate. The thickness is defined by a peak wavelength of the light and the refractive index of the translucent film. The semiconductor substrate is heated in a temperature range of about 300° C. to about 600° C. A surface of the semiconductor substrate is heated with the light which has a pulse width of about 0.1 ms to about 100 ms.

Abstract: The semiconductor device is manufactured forming by polysilicon film on a gate insulating film formed on a semiconductor substrate; introducing a first metal into a portion of a region of the polysilicon film; forming a pre-gate electrode from the polysilicon film, the polysilicon film having the first metal introduced; and transforming the pre-gate electrode into a silicide in its entirety to form a suicide film and to form a metal layer by causing the first metal to be precipitated between the gate insulating film and the silicide film. Thereby, a gate electrode in a particular MOSFET has a first metal layer being the undermost layer and a silicide layer over the first metal layer.

Abstract: A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiy film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0?y<1.