Patents by Inventor Kunihiro Miyazaki

Kunihiro Miyazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10406566
    Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: September 10, 2019
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Jun Matsushita, Yuji Nagashima, Konosuke Hayashi, Kunihiro Miyazaki
  • Patent number: 10281210
    Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: May 7, 2019
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Kunihiro Miyazaki, Konosuke Hayashi, Takashi Ootagaki, Yuji Nagashima
  • Patent number: 9966282
    Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: May 8, 2018
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Kunihiro Miyazaki, Kenji Minami, Yuji Nagashima, Konosuke Hayashi
  • Publication number: 20180033651
    Abstract: According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided.
    Type: Application
    Filed: July 27, 2017
    Publication date: February 1, 2018
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Konosuke HAYASHI, Kunihiro MIYAZAKI
  • Publication number: 20170259308
    Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.
    Type: Application
    Filed: May 30, 2017
    Publication date: September 14, 2017
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Jun MATSUSHITA, Yuji NAGASHIMA, Konosuke HAYASHI, Kunihiro MIYAZAKI
  • Publication number: 20160093486
    Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.
    Type: Application
    Filed: September 28, 2015
    Publication date: March 31, 2016
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Kunihiro MIYAZAKI, Kenji MINAMI, Yuji NAGASHIMA, Konosuke HAYASHI
  • Publication number: 20160025409
    Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.
    Type: Application
    Filed: February 28, 2014
    Publication date: January 28, 2016
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Kunihiro MIYAZAKI, Konosuke HAYASHI, Takashi OOTAGAKI, Yuji NAGASHIMA
  • Publication number: 20150090297
    Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.
    Type: Application
    Filed: September 24, 2014
    Publication date: April 2, 2015
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Jun MATSUSHITA, Yuji NAGASHIMA, Konosuke HAYASHI, Kunihiro MIYAZAKI
  • Publication number: 20150090296
    Abstract: A substrate processing device 100 includes a solvent replacing unit (organic solvent supply unit 15 and solvent supply unit 34) replacing a cleaning liquid with a volatile solvent of a low concentration, and thereafter further performing replacement with a volatile solvent of a high concentration.
    Type: Application
    Filed: September 24, 2014
    Publication date: April 2, 2015
    Applicant: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Yuji NAGASHIMA, Jun MATSUSHITA, Konosuke HAYASHI, Kunihiro MIYAZAKI, Masaaki FURUYA, Hidehito AZUMANO, Toyoyasu TAUCHI
  • Publication number: 20150090298
    Abstract: In a substrate processing device 10, a magnetic field forming unit is added to a solvent supply unit 58. The magnetic field forming unit 100 applies a magnetic field to a surface of a substrate W on which a cleaning liquid and a volatile solvent coexist. The magnetic field forming unit stirs and mixes the cleaning liquid and the volatile solvent on the surface of the substrate W to promote replacement of the cleaning liquid with the volatile solvent.
    Type: Application
    Filed: September 24, 2014
    Publication date: April 2, 2015
    Applicant: SHIBAURA MECHANTRONICS CORPORATION
    Inventors: Yuji NAGASHIMA, Jun MATSUSHITA, Yuki SAITO, Konosuke HAYASHI, Kunihiro MIYAZAKI
  • Patent number: 8841205
    Abstract: A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: September 23, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaki Kamimura, Takashi Shimizu, Kunihiro Miyazaki
  • Publication number: 20140041694
    Abstract: An cleaning solution producing apparatus according to an embodiment includes: a mixing unit configured to produce a liquid mixture by mixing a hydrogen peroxide solution into an acidic or alkaline liquid, and to raise the pressure of the produced liquid mixture by use of an oxygen gas produced through the decomposition of the hydrogen peroxide solution, or by use of vapor produced by heat of the reaction; and a bubble producing unit configured to produce multiple fine bubbles in the liquid mixture by releasing the pressure of the liquid mixture which is raised by the mixing unit.
    Type: Application
    Filed: August 7, 2013
    Publication date: February 13, 2014
    Applicant: Shibaura Mechatronics Corporation
    Inventors: Kunihiro MIYAZAKI, Konosuke Hayashi
  • Patent number: 8148717
    Abstract: A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y?1E-5exp (21541/T).
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: April 3, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Ito, Yusuke Oshiki, Kouji Matsuo, Kenichi Yoshino, Takaharu Itani, Takuo Ohashi, Toshihiko Iinuma, Kiyotaka Miyano, Kunihiro Miyazaki
  • Publication number: 20120052600
    Abstract: A manufacturing method for a semiconductor device, comprising: performing first processing on a plurality of wafers in a first processing order in a first processing apparatus; obtaining a processed amount with respect to each of the plurality of wafers in the first processing; obtaining a processed amount with respect to each of the plurality of wafers by second processing in a second processing apparatus after the first processing; deciding a second processing order, which is different from the first processing order, from the processed amount with respect to each of the plurality of wafers by the first processing and the processed amount with respect to each of the plurality of wafers by the second processing; and performing the second processing on the plurality of wafers in the second processing order in the second processing apparatus.
    Type: Application
    Filed: August 25, 2011
    Publication date: March 1, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaki Kamimura, Takashi Shimizu, Kunihiro Miyazaki
  • Publication number: 20120031441
    Abstract: A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
    Type: Application
    Filed: October 20, 2011
    Publication date: February 9, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Tomita, Hiroaki Yamada, Kunihiro Miyazaki, Hajime Onoda
  • Patent number: 8066020
    Abstract: A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.
    Type: Grant
    Filed: October 27, 2006
    Date of Patent: November 29, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Tomita, Hiroaki Yamada, Kunihiro Miyazaki, Hajime Onoda
  • Publication number: 20110127578
    Abstract: A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y?1E-5exp (21541/T).
    Type: Application
    Filed: January 28, 2011
    Publication date: June 2, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Ito, Yusuke Oshiki, Kouji Matsuo, Kenichi Yoshino, Takaharu Itani, Takuo Ohashi, Toshihiko Iinuma, Kiyotaka Miyano, Kunihiro Miyazaki
  • Publication number: 20110089525
    Abstract: A trench is formed on a semiconductor substrate with a first insulation film patterned on the semiconductor substrate as a mask; a second insulation film is embedded in the trench and flattened; an upper portion of the first insulation film is selectively removed, and a part of a side face of the second insulation film is exposed; a part of the second insulation film is isotropically removed; a lower portion of the remaining first insulation film is selectively removed; and then a part of the remaining second insulation film is further isotropically removed so that an upper face of the second insulation film is at a predetermined height from a surface of the semiconductor substrate, a taper having a minimum taper angle of 90° or more is formed on the side face of the second insulation film, and a STI is formed.
    Type: Application
    Filed: December 16, 2010
    Publication date: April 21, 2011
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Yasuhiro Ito, Kunihiro Miyazaki, Kenji Takakura
  • Patent number: 7902030
    Abstract: A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y?1E-5exp(21541/T).
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: March 8, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Ito, Yusuke Oshiki, Kouji Matsuo, Kenichi Yoshino, Takaharu Itani, Takuo Ohashi, Toshihiko Iinuma, Kiyotaka Miyano, Kunihiro Miyazaki
  • Publication number: 20110034015
    Abstract: According to one embodiment, a heat treatment apparatus includes a light emitting unit to emit light to irradiate a wafer, a processing unit with a stage section and a control unit. The control unit implements a first irradiation to irradiate the light onto the wafer. After the first irradiation, the control unit changes at least one selected from a disposition of the wafer, a distribution of an intensity of the light on a major surface of the stage section along a circumferential edge direction of the wafer, and a distribution of a temperature of the wafer in a supplemental heating by the stage section along a circumferential edge direction of the wafer. After the changing, the control unit implements a second irradiation to irradiate the light onto the wafer. Durations of the first irradiation and the second irradiation are shorter than a time necessary for the changing.
    Type: Application
    Filed: June 8, 2010
    Publication date: February 10, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kenichi Yoshino, Takayuki Ito, Kunihiro Miyazaki