Abstract: A manufacturing apparatus of a semiconductor device includes an introducing section, a process section, and a withdrawing section. The introducing section introduces a transfer box therein. The process section takes in the semiconductor substrate put in the introducing section and applies a prescribed processing to the semiconductor substrate. Further, the withdrawing section is arranged on a surface differing from the surface on which the introducing section is arranged and discharges the transfer box holding the semiconductor substrate withdrawn from the process section of the semiconductor substrate.

Abstract: A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30?X/Y?0.78 and 0.03?Y?6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.

Abstract: A method of manufacturing a semiconductor device. In the method, a thin film is formed on an Si substrate having face orientation (100), that part of the thin film, which lies on an element-isolating region, is removed. Then, the Si substrate is subjected to selective etching, making a trench in the substrate to isolate an element, by using the thin film as mask and a mixture solution of hydrofluoric acid and ozone water.

Abstract: A semiconductor manufacturing apparatus for cleaning a semiconductor substrate comprises a high-temperature circulation type chemical bath which is filled with a chemical to be used for cleaning of a semiconductor substrate and in which the chemical is circulated and reused, a draining mechanism which drains the chemical in the chemical bath therefrom, an auxiliary fluid supplying mechanism which adds to the drained chemical regarded as a waste chemical an auxiliary fluid, and thereby heats the waste chemical, a heat exchanger in which the heated waste chemical is stored temporarily and a new chemical is allowed to flow, and which cools the waste chemical and raises temperature of the new chemical by heat exchange, and a pipe in which the new chemical having the temperature raised in the heat exchanger is supplied to the chemical bath.

Abstract: An etching method of subjecting a base material to an etching process using an etching agent containing hydrogen fluoride and ozone is disclosed. The base material has a first region constituted from silicon as a main material and a second region constituted from SiO2 as a main material. The etching method includes the steps of: preparing the base material; and supplying the etching agent onto the base material to form a step between the first and second regions using a feature that an etching rate of silicon by the etching agent is higher than an etching rate of SiO2 by the etching agent, so that the height of the surface of the first region is lower than the height of the surface of the second region.

Abstract: A case accommodates two circuit components to be overlapped one above the other and mutually in an approximately parallel form. The terminals of the upper electric power conducting channel are fitted into the terminals of the lower electric power conducting channel one above the other so that they can be connected. The case is provided with a positioning part which regulates deflection of both the terminals above and below toward the vertical direction intersecting with the direction that the terminal is fitted into the terminal, thus making it possible to give positioning to a plurality of the terminals all together and also making it possible to connect the terminals and the terminals respectively to their counterparts without fail. Further, the positioning part is provided on the case for accommodating the circuit components, which eliminates the necessity for a special positioning member.

Abstract: In a small scaled plant intended for flexible manufacturing, a pure water supply system is provided at a low cost without reducing a production efficiency. A pure water system produces a plurality of grades of pure water which are supplied through pipes connected to points of use for cleaning, CMP, lithography, and the like. Upon receipt of a request signal from each point of use for starting to use a certain grade of pure water, a controller determines whether or not a required amount exceeds the capacity of the grade of pure water which can be supplied by the pure water system. If not, the controller sends a use permission signal to the point of use for permitting the same to use the pure water. When a certain use point is using the requested grade of pure water, the controller may not permit the requesting point of use to use the pure water until a use end signal is sent from the use point which is using the pure water.

Abstract: There is disclosed a wafer cleaning method comprising supplying a cleaning water to a wafer cleaned with a chemical solution, measuring the resistivity of a solution including the chemical solution and cleaning water, and differentiating the measured value with respect to time, and cleaning the wafer continuously with the cleaning water until the time differential value of the resistivity becomes equal to or less than a preset value and is held at that values for preset time.

Abstract: The present invention is directed to a substrate treating apparatus of a multi-nozzle type comprising an outer tube nozzle through which a chemical fluid, a combination of a chemical fluid and a gas, pure water, or a combination of pure water and a gas is discharged onto a substrate to be treated, and an inner tube nozzle through which a chemical fluid, a combination of a chemical fluid and a gas, pure water, or a combination of pure water and a gas is discharged onto the substrate. The inner tube nozzle may be provided in the outer tube nozzle such that the inner and outer tube nozzles constitute a multi-nozzle structure. The outer tube nozzle may have at a distal end a wafer top that may extend parallel to the substrate from the distal end, and be adapted to avoid contact with the substrate during treatment.

Abstract: A semiconductor manufacturing device having a buffer unit which receives a substrate treating substance from an external source, stores it therein, and delivers it to an external unit.

Abstract: A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.

Abstract: A manufacturing apparatus of a semiconductor device includes an introducing section, a process section, and a withdrawing section. The introducing section introduces a transfer box therein. The process section takes in the semiconductor substrate put in the introducing section and applies a prescribed processing to the semiconductor substrate. Further, the withdrawing section is arranged on a surface differing from the surface on which the introducing section is arranged and discharges the transfer box holding the semiconductor substrate withdrawn from the process section of the semiconductor substrate.

Abstract: A substrate treating apparatus and a substrate treating method for treating a to-be-treated substrate such as a semiconductor wafer, in which chemical fluids can spread uniformly over the substrate without substantially decomposing and changing their compositions, so that production of mists or volatilization of the chemical fluids over the surface of the substrate can be restrained. A multi-nozzle structure, such as a double-nozzle structure, includes an outer tube nozzle, through which at least a chemical fluid or a combination of a chemical fluid and a gas is discharged onto a semiconductor wafer, and an inner tube nozzle, through which at least a chemical fluid or a combination of a chemical fluid and a gas can be discharged into the outer tube nozzle. The distal end of the outer tube nozzle has a top structure that extends parallel to the semiconductor wafer in a non-contact manner.

Abstract: A method of cleaning a semiconductor substrate is disclosed. The method comprises setting a substrate to-be-treated substantially in parallel to ends of multi-nozzles including an inner tube nozzle and an outer tube nozzle to oppose each other, cleaning the substrate by discharging, to the substrate, a chemical fluid, a combination of chemical fluid and a gas, pure water, or a combination of pure water and a gas through the outer tube nozzle and simultaneously discharging a chemical fluid, a combination of a chemical fluid and a gas, pure water, or a combination of pure water and a gas through the inner tube nozzle, and washing the substrate by discharging pure water to the substrate through at least one of the inner tube nozzle and the outer tube nozzle.

Abstract: A method of manufacture of semiconductor devices is disclosed, which includes an etching process carried out by using an undiluted etching solution containing H2SO4 and NH4F or H2SO4 and HF as main components, and having an H2O content set to 5 wt % or lower. Moreover, a method of manufacture of semiconductor devices is disclosed, which includes selective etching an SiN film by using a mixed solution of H2SO4 and H2O, or an etching solution obtained by adding a small amount of hydrofluoric acid to the mixed solution.

Abstract: A silicon wafer is set in a processing bath and an HF water solution and ozone water are respectively supplied from an HF line and ozone water line into the processing bath via an HF valve and ozone water valve to create a mixture. The mixture contains an HF water solution with a concentration of 0.01% to 1% and ozone water with a concentration of 0.1 ppm to 20 ppm, has substantially the same etching rate for silicon and for silicon oxide film and is used at a temperature in the range of 10.degree. to 30.degree. C. The silicon wafer and the silicon oxide film formed on part of the surface of the wafer can be simultaneously cleaned by use of the above mixture.

Abstract: In an improved ozonizer, at least those parts of an ozone gas delivery path located downstream of an ozone generating cell which are to come into contact with ozone gas are either composed of or coated with at least one ozone-resistant, Cr-free material selected from among aluminum (Al), an aluminum alloy, Teflon, fluorinated nickel, a nickel alloy, a silicon oxide based glass and a high-purity aluminium oxide. The ozonizer is capable of producing ozone that is not contaminated with Cr compounds at all or which is insufficiently contaminated to cause any practical problem in the fabrication of highly integrated semiconductor devices.

Abstract: Ozonizer (10) which supplies a feed gas to ozone generating cell (11) under application of a high voltage and which delivers an ozone gas through an ozone gas transport path (consisting of pipes (14) and (15)) as it has been generated in said ozone generating cell (11) is characterized in that the ozone gas transport path is furnished with means for removing at least one of NOx, HF and SOx (in the drawings, the means is for removing NOx) and that the ozone gas from the ozone generating cell (11) is passed through said removing means, whereby at least one of NOx, HF and SOx in said ozone gas is removed before it is delivered to a subsequent stage. The product ozone is not contaminated with Cr compounds at all or insufficiently contaminated to cause any practical problems in the fabrication of highly integrated semiconductor devices.

Abstract: A fluorescent X-ray analyzing apparatus includes a source of excitation (2) for irradiating a silicon-based sample (S) with primary X-rays (B2) to excite the silicon-based sample (S), a detector (4) for detecting fluorescent X-rays (B5) emitted from the silicon-based sample (S), and an analyzer (6) for analyzing elements contained in the silicon-based sample (S) based on a result of detection performed by the detector (4). The primary X-rays (B2) emitted from the source of excitation (2) have a wavelength higher than, but in the vicinity of a wavelength at an Si--K absorption edge so that generation of fluorescent X-rays (B5) of Si is suppressed to minimize a noise which would occur during detection of fluorescent X-rays (B5) of Na and Al to thereby accomplish an accurate analysis of a minute quantity of NA and Al contained in the sample (S).

Abstract: A surface processing method effected before the total-reflection X-ray fluorescence analysis is effected is disclosed. The surface processing is to modify all of the contaminants attached at least to the measurement surface of the wafer into particle-shaped residues. For this purpose, the measurement surface of the wafer is first dissolved by hydrofluoric acid to form a large number of droplets on the measurement surface. Next, the thus formed droplets are dried with the position thereof kept unchanged. After the drying, contaminants attached to the measurement surface of the wafer are left as particle-shaped residues. After this, the measurement surface of the wafer is analyzed by the total-reflection X-ray fluorescence analyzing method.